Jean‐Luc Rouvière - Publications, H-index & Citations

Jean‐Luc Rouvière

cea-grenoble inac/sp2m/lemma, 17 rue des martyrs, 38054 grenoble cedex 9, france

47H指数

277论文数

7.1K被引数

收录论文 72

发表时间

Polarity Inversions in AlN Films on Sapphire Exploiting Silicon and Oxygen Diffusion during High-Temperature Annealing 在蓝宝石上的AlN薄膜中利用高温退火期间硅和氧的扩散实现极性反转

Crystal Growth & Design

IF3.4

2025-07-10

PREAI

Valeria Bonito Oliva; Eric Robin; Sylvia Hagedorn; Holm Kirmse; Jean-Luc Rouviere; Hanako Okuno; Benjamin Damilano; Adrien Michon; Thilo Remmele; Tobias Schulz; Houari Amari; Martin Albrecht; Philippe Vennéguès

Optical properties of basal plane stacking faults in AlN nanowires AlN纳米线中基面堆垛层错的光学性质

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-05-02

OAAI

Guerin, Corentin; Jourdan, Fabien; Rouviere, Jean-Luc; Gayral, Bruno; Jacopin, Gwenole; Daudin, Bruno

Assessment of the crystalline orientation of nanoscale semiconductor structures via atom probe tomography

APPLIED PHYSICS LETTERS

IF3.6

2025-03-01

PREAI

Canas, J.; Grenier, A.; Rouviere, J. L.; Harikumar, A.; Ndiaye, S.; Jannaud, A.; Monroy, E.; Rigutti, L.

Molecular Beam Epitaxy of Al-Polar Wurtzite AlN(0001) on β-Ga2O3(-201) Substrates 极性纤锌矿AlN(0001)在β-Ga₂O₃(-201)衬底上的分子束外延

ACS MATERIALS LETTERS

IF8.7

2025-01-23

PREAI

Seguret, A; Okuno, H; Roussel, H; Rouviere, JL; Bujak, A; Ferrandis, P; Bellet-Amalric, E; Consonni, V; Monroy, E

Imaging Negative Charge around Single Vanadium Dopant Atoms in Monolayer Tungsten Diselenide Using 4D Scanning Transmission Electron Microscopy 使用4D扫描透射电子显微镜成像单层二硒化钨中单个钒掺杂剂原子周围的负电荷

ACS NANO

IF16

2024-08-15

PREAI

Dosenovic, Djordje; Dechamps, Samuel; Sharma, Kshipra; Rouviere, Jean-Luc; Lu, Yiran; den Hertog, Martien Ilse; Genovese, Luigi; Dubois, Simon Mutien-Marie; Charlier, Jean-Christophe; Jamet, Matthieu; Marty, Alain; Okuno, Hanako

Effect of Extended Defects on AlGaN Quantum Dots for Electron-Pumped Ultraviolet Emitters

ACS NANO

IF16

2024-04-23

OAAI

Canas, Jesus; Rochat, Nevine; Grenier, Adeline; Jannaud, Audrey; Saghi, Zineb; Rouviere, Jean-Luc; Bellet-Amalric, Edith; Harikumar, Anjali; Bougerol, Catherine; Rigutti, Lorenzo; Monroy, Eva

Synthesis of relaxed Ge0.9Sn0.1/Ge by nanosecond pulsed laser melting

APPLIED SURFACE SCIENCE

IF6.9

2023-03-01

PREAI

Di Russo, Enrico; Sgarbossa, Francesco; Ranieri, Pierpaolo; Maggioni, Gianluigi; Ndiaye, Samba; Duguay, Sebastien; Vurpillot, Francois; Rigutti, Lorenzo; Rouviere, Jean-Luc; Morandi, Vittorio; De Salvador, Davide; Napolitani, Enrico

Practice of electron microscopy on nanoparticles sensitive to radiation damage: CsPbBr3 nanocrystals as a case study

FRONTIERS IN CHEMISTRY

IF4.2

2022-12-20

OAAI

Duong, Tuan M.; Sharma, Kshipra; Agnese, Fabio; Rouviere, Jean-Luc; Okuno, Hanako; Pouget, Stephanie; Reiss, Peter; Ling, Wai Li

Assessment of Active Dopants and p-n Junction Abruptness Using In Situ Biased 4D-STEM

NANO LETTERS

IF9.1

2022-11-28

OAAI

da Silva, Bruno Cesar; Momtaz, Zahra Sadre; Monroy, Eva; Okuno, Hanako; Rouviere, Jean-Luc; Cooper, David; Den Hertog, Martien Ilse

The influence of illumination conditions in the measurement of built-in electric field at p-n junctions by 4D-STEM

APPLIED PHYSICS LETTERS

IF3.6

2022-09-20

OAAI

da Silva, Bruno C.; Momtaz, Zahra S.; Bruas, Lucas; Rouviere, Jean-Luc; Okuno, Hanako; Cooper, David; den-Hertog, Martien, I

Studying phase change memory devices by coupling scanning precession electron diffraction and energy dispersive X-ray analysis

ACTA MATERIALIA

IF9.3

2020-12-01

OAAI

Henry, Loic; Bernier, Nicolas; Jacob, Martin; Navarro, Gabriele; Clement, Laurent; Rouviere, Jean-Luc; Robin, Eric

Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy 分子束外延法在白云母上生长闪锌矿GaN

nanotechnology

IF2.8

2020-10-12

OAAI

Daudin, Bruno; Donatini, Fabrice; Bougerol, Catherine; Gayral, Bruno; Bellet-Amalric, Edith; Vermeersch, Remy; Feldberg, Nathaniel; Rouviere, Jean-Luc; Recio Carretero, Maria Jose; Garro, Nuria; Garcia-Orrit, Saul; Cros, Ana

Full characterization and modeling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure

PHYSICAL REVIEW MATERIALS

IF3.4

2020-07-28

OAAI

Beznasyuk, D. V.; Stepanov, P.; Rouviere, J. L.; Glas, F.; Verheijen, M.; Claudon, J.; Hocevar, M.

In Situ Transmission Electron Microscopy Analysis of Copper-Germanium Nanowire Solid-State Reaction

NANO LETTERS

IF9.1

2019-10-15

OAAI

El Hajraoui, Khalil; Robin, Eric; Zeiner, Clemens; Lugstein, Alois; Kodjikian, Stephanie; Rouviere, Jean-Luc; Den Hertog, Martien

Incommensurate grain boundary in silicon and the silver-ratio sequence

PHYSICAL REVIEW B

IF3.7

2019-09-05

OAAI

Lancon, Frederic; Gunkelmann, Nina; Caliste, Damien; Rouviere, Jean-Luc

Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2019-04-30

OAAI

Concordel, Alexandre; Jacopin, Cwenole; Gayral, Bruno; Garro, Nuria; Cros, Ana; Rouviere, Jean-Luc; Daudin, Bruno

Understanding the Crystallization Behavior of Surface-Oxidized GeTe Thin Films for Phase-Change Memory Application

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2019-04-24

PREAI

Kolb, Andrea N. D.; Bernier, Nicolas; Robin, Eric; Benayad, Anass; Rouviere, Jean-Luc; Sabbione, Chiara; Hippert, Francoise; Noe, Pierre

In Situ Transmission Electron Microscopy Analysis of Aluminum-Germanium Nanowire Solid-State Reaction

NANO LETTERS

IF9.1

2019-03-25

OAAI

El Hajraoui, Khalil; Minh Anh Luong; Robin, Eric; Brunbauer, Florian; Zeiner, Clemens; Lugstein, Alois; Gentile, Pascal; Rouviere, Jean-Luc; Den Hertog, Martien

Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate

APPLIED PHYSICS LETTERS

IF3.6

2018-05-18

PREAI

Roque, J.; Haas, B.; David, S.; Rochat, N.; Bernier, N.; Rouviere, J. L.; Salem, B.; Gergaud, P.; Moeyaert, J.; Martin, M.; Bertin, F.; Baron, T.

Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7nm nanosheet gate-all-around device technology

APPLIED PHYSICS LETTERS

IF3.6

2018-01-29

PREAI

Reboh, S.; Coquand, R.; Barraud, S.; Loubet, N.; Bernier, N.; Audoit, G.; Rouviere, J. -L.; Augendre, E.; Li, J.; Gaudiello, J.; Gambacorti, N.; Yamashita, T.; Faynot, O.

研究方向