未登录
分享
收藏
分享
收藏
分享
收藏
分享
收藏
分享
收藏
分享
收藏
分享
收藏
分享
收藏
分享
收藏Reliability of NiO/β-Ga2O3 bipolar heterojunctionNiO/β-Ga2O3双极异质结的可靠性
Gong, Hehe; Yang, Xin; Porter, Matthew; Yang, Zineng; Wang, Bixuan; Li, Li; Fu, Lan; Sasaki, Kohei; Wang, Han; Gu, Shulin; Zhang, Rong; Ye, Jiandong; Zhang, Yuhao
分享
收藏First principles investigation on the Boron-VA (VA=N, P, As, Sb) complexes in diamond for possible n-type conductivity金刚石中硼-VA (VA = N,P,As,Sb) 配合物可能的n型导电性的第一性原理研究
Feng, Bo; Tang, Kun; Yang, Kai; Zhao, Gengyou; Gu, Liangxue; Fan, Kangkang; Zhu, Shunming; Zheng, Youdou; Gu, Shulin
分享
收藏Orientation-dependent strain and dislocation in HVPE-grown α-Ga2O3 epilayers on sapphire substrates
Zhang, Yijun; Shen, Yang; Cui, Mei; Liu, Jing; Xie, Dabao; Ren, Fangfang; Gu, Shulin; Zheng, Youdou; Zhang, Rong; Ye, Jiandong
分享
收藏Fast switching Ga2O3 Schottky barrier power diode with beveled-mesa and BaTiO3 field plate edge termination
Sun, N.; Gong, H. H.; Hu, T. C.; Zhou, F.; Wang, Z. P.; Yu, X. X.; Ren, F. -f; Gu, S. L.; Lu, H.; Zhang, R.; Ye, J. D.
分享
收藏Ga2O3/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact
Gong, Hehe; Sun, Na; Hu, Tiancheng; Yu, Xinxin; Porter, Matthew; Yang, Zineng; Ren, Fangfang; Gu, Shulin; Zheng, Youdou; Zhang, Rong; Zhang, Yuhao; Ye, Jiandong
分享
收藏
分享
收藏Performance limiting inhomogeneities of defect states in ampere-class Ga2O3 power diodes
Wang, Z. P.; Sun, N.; Yu, X. X.; Gong, H. H.; Ji, X. L.; Ren, F. -F; Gu, S. L.; Zheng, Y. D.; Zhang, R.; Kuznetsov, A. Yu.; Ye, J. D.
分享
收藏Formation mechanism of SiV in diamond from unintentional silicon doping by microwave plasma chemical vapor deposition
Yang, Kai; Teng, Yan; Zhao, Weikang; Tang, Kun; Fan, Kangkang; Duan, Jingjing; Huang, Yingmeng; Ye, Jiandong; Zhang, Rong; Zhu, Shunming; Gu, Shulin
分享
收藏Unraveling evolution of microstructural domains in the heteroepitaxy of β-Ga2O3 on sapphire
Cui, Mei; Zhang, Yijun; Gu, Songhao; Zhang, Chongde; Ren, Fang-Fang; Tang, Dongming; Yang, Yi; Gu, Shulin; Zhang, Rong; Ye, Jiandong
分享
收藏
分享
收藏
分享
收藏