Mahito Yamamoto - Publications, H-index & Citations

Mahito Yamamoto

Kansai University

19H指数

65论文数

2.6K被引数

收录论文 23

发表时间

A reconfigurable transistor and memory based on a two-dimensional heterostructure and photoinduced trapping

NATURE ELECTRONICS

IF40.9

2023-09-28

PREAI

Tsai, Meng-Yu; Huang, Chia-Tse; Lin, Che-Yi; Lee, Mu-Pai; Yang, Feng-Shou; Li, Mengjiao; Chang, Yuan-Ming; Watanabe, Kenji; Taniguchi, Takashi; Ho, Ching-Hwa; Wu, Wen-Wei; Yamamoto, Mahito; Wu, Jiunn-Lin; Chiu, Po-Wen; Lin, Yen-Fu

Step-like resistance changes in VO2 thin films grown on hexagonal boron nitride with in situ optically observable metallic domains

APPLIED PHYSICS LETTERS

IF3.6

2022-02-01

PREAI

Genchi, Shingo; Yamamoto, Mahito; Iwasaki, Takuya; Nakaharai, Shu; Watanabe, Kenji; Taniguchi, Takashi; Wakayama, Yutaka; Tanaka, Hidekazu

Barrier Formation at the Contacts of Vanadium Dioxide and Transition-Metal Dichalcogenides 二氧化钒和过渡金属二硫化物接触处的势垒形成

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2019-09-17

PREAI

Yamamoto, Mahito; Nouchi, Ryo; Kanki, Teruo; Nakaharai, Shu; Hattori, Azusa N.; Watanabe, Kenji; Taniguchi, Takashi; Wakayama, Yutaka; Ueno, Keiji; Tanaka, Hidekazu

Growth of vanadium dioxide thin films on hexagonal boron nitride flakes as transferrable substrates

SCIENTIFIC REPORTS

IF3.9

2019-02-27

OAAI

Genchi, Shingo; Yamamoto, Mahito; Shigematsu, Koji; Aritomi, Shodai; Nouchi, Ryo; Kanki, Teruo; Watanabe, Kenji; Taniguchi, Takashi; Murakami, Yasukazu; Tanaka, Hidekazu

Gate-Tunable Thermal Metal-Insulator Transition in VO2 Monolithically Integrated into a WSe2 Field-Effect Transistor

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2019-01-03

PREAI

Yamamoto, Mahito; Nouchi, Ryo; Kanki, Teruo; Hattori, Azusa N.; Watanabe, Kenji; Taniguchi, Takashi; Ueno, Keiji; Tanaka, Hidekazu

Correlation between Ni Valence and Resistance Modulation on a SmNiO3 Chemical Transistor

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2018-12-18

PREAI

Kawamoto, Daiki; Hattori, Azusa N.; Yamamoto, Mahito; Tan, Xin Liang; Hattori, Ken; Daimon, Hiroshi; Tanaka, Hidekazu

Layer-by-Layer Oxidation Induced Electronic Properties in Transition-Metal Dichalcogenides

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2018-07-02

PREAI

Das, Soumya Ranjan; Wakabayashi, Katsunori; Yamamoto, Mahito; Tsukagoshi, Kazuhito; Dutta, Sudipta

Pronounced photogating effect in atomically thin WSe2 with a self-limiting surface oxide layer

APPLIED PHYSICS LETTERS

IF3.6

2018-05-01

PREAI

Yamamoto, Mahito; Ueno, Keiji; Tsukagoshi, Kazuhito

Virtual substrate method for nanomaterials characterization

NATURE COMMUNICATIONS

IF15.7

2017-05-26

OAAI

Da, Bo; Liu, Jiangwei; Yamamoto, Mahito; Ueda, Yoshihiro; Watanabe, Kazuyuki; Nguyen Thanh Cuong; Li, Songlin; Tsukagoshi, Kazuhito; Yoshikawa, Hideki; Iwai, Hideo; Tanuma, Shigeo; Guo, Hongxuan; Gao, Zhaoshun; Sun, Xia; Ding, Zejun

Measuring the Complex Optical Conductivity of Graphene by Fabry-Perot Reflectance Spectroscopy (vol 6, 34166, 2016)

SCIENTIFIC REPORTS

IF3.9

2017-01-19

OAAI

Ghamsari, Behnood G.; Tosado, Jacob; Yamamoto, Mahito; Fuhrer, Michael S.; Anlage, Steven M.

Measuring the Complex Optical Conductivity of Graphene by Fabry-Perot Reflectance Spectroscopy

SCIENTIFIC REPORTS

IF3.9

2016-09-29

OAAI

Ghamsari, Behnood G.; Tosado, Jacob; Yamamoto, Mahito; Fuhrer, Michael S.; Anlage, Steven M.

Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2016-06-02

PREAI

Nakaharai, Shu; Yamamoto, Mahito; Ueno, Keiji; Tsukagoshi, Kazuhito

Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts WSe2上的自限性氧化物作为受控表面受体和低电阻空穴接触

NANO LETTERS

IF9.1

2016-03-15

166

PREAI

Yamamoto, Mahito; Nakaharai, Shu; Ueno, Keiji; Tsukagoshi, Kazuhito

Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors 分层MoTe2晶体管中的噪声起源及其在环境传感器中的可能用途

ADVANCED MATERIALS

IF26.8

2015-09-28

PREAI

Lin, Yen-Fu; Xu, Yong; Lin, Che-Yi; Suen, Yuen-Wuu; Yamamoto, Mahito; Nakaharai, Shu; Ueno, Keiji; Tsukagoshi, Kazuhito

Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors 双极性 α-MoTe2晶体管的静电可逆极性

ACS NANO

IF16

2015-06-02

134

PREAI

Nakaharai, Shu; Yamamoto, Mahito; Ueno, Keiji; Lin, Yen-Fu; Li, Song-Lin; Tsukagoshi, Kazuhito

Double resonance Raman modes in monolayer and few-layer MoTe2

PHYSICAL REVIEW B

IF3.7

2015-05-12

120

OAAI

Guo, Huaihong; Yang, Teng; Yamamoto, Mahito; Zhou, Lin; Ishikawa, Ryo; Ueno, Keiji; Tsukagoshi, Kazuhito; Zhang, Zhidong; Dresselhaus, Mildred S.; Saito, Riichiro

Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2 原子级薄WSe2的自限性逐层氧化

NANO LETTERS

IF9.1

2015-02-06

233

PREAI

Yamamoto, Mahito; Dutta, Sudipta; Aikawa, Shinya; Nakaharai, Shu; Wakabayashi, Katsunori; Fuhrer, Michael S.; Ueno, Keiji; Tsukagoshi, Kazuhito

Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers 厚度缩放效应对界面势垒和与二维MoS2层的电接触的影响

ACS NANO

IF16

2014-12-05

171

OAAI

Li, Song-Lin; Komatsu, Katsuyoshi; Nakaharai, Shu; Lin, Yen-Fu; Yamamoto, Mahito; Duan, Xiangfeng; Tsukagoshi, Kazuhito

Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits

ADVANCED MATERIALS

IF26.8

2014-04-01

438

PREAI

Lin, Yen-Fu; Xu, Yong; Wang, Sheng-Tsung; Li, Song-Lin; Yamamoto, Mahito; Aparecido-Ferreira, Alex; Li, Wenwu; Sun, Huabin; Nakaharai, Shu; Jian, Wen-Bin; Ueno, Keiji; Tsukagoshi, Kazuhito

Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2

ACS NANO

IF16

2014-03-27

308

PREAI

Yamamoto, Mahito; Wang, Sheng Tsung; Ni, Meiyan; Lin, Yen-Fu; Li, Song-Lin; Aikawa, Shinya; Jian, Wen-Bin; Ueno, Keiji; Wakabayashi, Katsunori; Tsukagoshi, Kazuhito

研究方向