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H

Hang Zhou

capital medical university

H指数:8

被引数:209

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First-principles study of hydrogen bridge defects at amorphous-SiO2/Si (100) interface: Structural dynamics and non-radiative carrier capture

基于第一性原理的氢桥缺陷在非晶SiO2/Si(100)界面处的结构动力学与非辐射载流子俘获研究

Computational Materials Science

IF3.3

2025-11-260

PRE

Phosphorylation of H3.3 at Serine 31 acts as a switch of nucleosome dynamics for transcription

H3.3在丝氨酸31位的磷酸化作为转录过程中核小体动力学的开关。

NUCLEIC ACIDS RESEARCH

IF13.1

2025-09-230

PRE

Gamma-Ray Irradiation Induced Dielectric Loss of SiO2/Si Heterostructures in Through-Silicon Vias (TSVs) by Forming Border Traps

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-01-2928

PRE

Over 18.7% efficiency for bulk heterojunction and pseudo-planar heterojunction organic solar cells achieved by regulating intermolecular compatibility

JOURNAL OF MATERIALS CHEMISTRY A

IF9.5

2024-01-011

PRE

Observation and Origin of Anomalous Early Recovery of Base Currents in Low-Dose-Rate γ-Ray-Irradiated PNP Transistors

低剂量率 γ射线辐照的PNP晶体管中基极电流异常早期恢复的观察和起源

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-11-082

PRE

Near-diffraction-limited 201 W high-repetition-rate Yb:YAG regenerative thin-disk amplifier

近衍射极限201 W高重复率Yb:YAG再生薄盘放大器

INFRARED PHYSICS & TECHNOLOGY

IF3.4

2023-11-016

PRE

First principle studies on properties of silicon-vacancy related defects in amorphous silica

非晶态二氧化硅中硅空位相关缺陷性质的第一性原理研究

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

2022-10-014

PRE

General Model for Defect Dynamics in Ionizing-Irradiated SiO2-Si Structures

IF12.1

2022-02-1013

PRE

Defect Dynamic Model of the Synergistic Effect in Neutron- and γ-Ray-Irradiated Silicon NPN Transistors

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2020-06-1617

PREAI

Gamma-ray irradiation-induced oxidation and disproportionation at the amorphous SiO2/Si interfaces

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2020-01-017

PREAI