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收藏Fano interference in single-molecule transistors
Ouyang, Yiping; Wang, Rui; Wu, Zewen; Guo, Deping; Ju, Yang-Yang; Chen, Jun; Zhang, Minhao; Pan, Danfeng; Tu, Xuecou; Zhang, Shuai; Kang, Lin; Chen, Jian; Wu, Peiheng; Wang, Xuefeng; Wan, Jianguo; Ji, Wei; Kong, Xianghua; Tan, Yuan-Zhi; Song, Fengqi 分享 收藏 分享 收藏 Excellent electrostatic control and gate reliability for breakdown enhanced AlGaN/GaN HEMTs with extreme permittivity BaTiO3Hao, Lin; Hu, Tiancheng; Guo, Hui; Pan, Danfeng; Ye, Jiandong; Zhou, Yugang; Lu, Hai; Zhang, Rong; Zheng, Youdou; Chen, Dunjun 分享 收藏 Enhancing SNSPDs detection efficiency via suspended SiO2 membraneXu, Tao; Bao, Han; Qin, Zhi; Jia, Xiaoqing; Zhu, Guanghao; Pan, Danfeng; Tu, Xuecou; Zhang, Labao; Zhao, Qingyuan; Kang, Lin; Chen, Jian; Wu, Peiheng 分享 收藏 分享 收藏 分享 收藏 分享 收藏 64-Pixel Mo80Si20 superconducting nanowire single-photon imager with a saturated internal quantum efficiency at 1.5 μmWang, Hui; Zhao, Qing-Yuan; Kong, Ling-Dong; Chen, Shi; Huang, Yang-Hui; Hao, Hao; Guo, Jia-Wei; Pan, Dan-Feng; Tu, Xue-Cou; Zhang, La-Bao; Jia, Xiao-Qing; Chen, Jian; Kang, Lin; Wu, Pei-Heng 分享 收藏 Improved LPCVD-SiNx/AlGaN/GaN MIS-HEMTs by using in-situ MOCVD-SiNx as an interface sacrificial layer通过使用原位mocvd-sinx作为界面牺牲层改进的lpcvd-sinx/AlGaN/GaN mis-hemtGuo, Hui; Shao, Pengfei; Zeng, Changkun; Bai, Haineng; Wang, Rui; Pan, Danfeng; Chen, Peng; Chen, Dunjun; Lu, Hai; Zhang, Rong; Zheng, Youdou 分享 收藏 High-Responsivity and Fast-Response Ultraviolet Phototransistors Based on Enhanced p-GaN/AlGaN/GaN HEMTs基于增强型p-gan/AlGaN/GaN hemt的高响应快速紫外光电晶体管Wang, Haiping; You, Haifan; Xu, Yang; Sun, Xinyu; Wang, Yiwang; Pan, Danfeng; Ye, Jiandong; Liu, Bin; Chen, Dunjun; Lu, Hai; Zhang, Rong; Zheng, Youdou 分享 收藏 Controllable Edge Epitaxy of Helical GeSe/GeS HeterostructuresWu, Qi; Fang, Zixuan; Zhu, Yuelei; Song, Haizeng; Liu, Yin; Su, Xin; Pan, Danfeng; Gao, Yuan; Wang, Peng; Yan, Shancheng; Fei, Zaiyao; Yao, Jie; Shi, Yi 分享 收藏 NiO/AlGaN interface reconstruction and transport manipulation of p-NiO gated AlGaN/GaN HEMTsGuo, Hui; Gong, Hehe; Yu, Xinxin; Wang, Rui; Cai, Qing; Xue, Junjun; Wang, Jin; Pan, Danfeng; Ye, Jiandong; Liu, Bin; Chen, Dunjun; Lu, Hai; Zhang, Rong; Zheng, Youdou 分享 收藏 Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix原子级薄晶体管矩阵驱动的单片微型LED三维显示Meng, Wanqing; Xu, Feifan; Yu, Zhihao; Tao, Tao; Shao, Liangwei; Liu, Lei; Li, Taotao; Wen, Kaichuan; Wang, Jianpu; He, Longbing; Sun, Litao; Li, Weisheng; Ning, Hongkai; Dai, Ningxuan; Qin, Feng; Tu, Xuecou; Pan, Danfeng; He, Shuzhuan; Li, Dabing; Zheng, Youdou; Lu, Yanqing; Liu, Bin; Zhang, Rong; Shi, Yi; Wang, Xinran 分享 收藏 Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire蓝宝石上晶圆级二硫化钼半导体单晶的外延生长Li, Taotao; Guo, Wei; Ma, Liang; Li, Weisheng; Yu, Zhihao; Han, Zhen; Gao, Si; Liu, Lei; Fan, Dongxu; Wang, Zixuan; Yang, Yang; Lin, Weiyi; Luo, Zhongzhong; Chen, Xiaoqing; Dai, Ningxuan; Tu, Xuecou; Pan, Danfeng; Yao, Yagang; Wang, Peng; Nie, Yuefeng; Wang, Jinlan; Shi, Yi; Wang, Xinran 分享 收藏 Thermal induced spin-polarized current protected by spin-momentum locking in ZrTe5 nanowiresNing, Jiai; Peng, Wanli; Wang, Wei; Chen, Zhendong; Yang, Pei; Chen, Yequan; Zhao, Yafei; Sun, Yizhe; Kanagaraj, Moorthi; Yang, Long; Gao, Qinwu; Zhang, Junran; Zhao, Degang; Pan, Danfeng; Ruan, Xuezhong; Li, Yao; Liu, Wenqing; He, Liang; Chen, Zhi-Gang; Xu, Yongbing 分享 收藏 分享 收藏 Sub-thermionic, ultra-high-gain organic transistors and circuits亚热离子、超高增益有机晶体管及电路Luo, Zhongzhong; Peng, Boyu; Zeng, Junpeng; Yu, Zhihao; Zhao, Ying; Xie, Jun; Lan, Rongfang; Ma, Zhong; Pan, Lijia; Cao, Ke; Lu, Yang; He, Daowei; Ning, Hongkai; Meng, Wanqing; Yang, Yang; Chen, Xiaoqing; Li, Weisheng; Wang, Jiawei; Pan, Danfeng; Tu, Xuecou; Huo, Wenxing; Huang, Xian; Shi, Dongquan; Li, Ling; Liu, Ming; Shi, Yi; Feng, Xue; Chan, Paddy K. L.; Wang, Xinran 分享 收藏 Unconventional anomalous Hall effect in magnetic topological insulator MnBi4Te7 deviceJia, Bin; Zhang, Shuai; Ying, Zhe; Xie, Hangkai; Chen, Bo; Naveed, Muhammad; Fei, Fucong; Zhang, Minhao; Pan, Danfeng; Song, Fengqi 分享 收藏 Gate-first AlGaN/GaN HEMT technology for enhanced threshold voltage stability based on MOCVD-grown in situ SiNx基于MOCVD原位SiNx增强阈值电压稳定性的先栅AlGaN/GaN HEMT技术Cheng, Liang; Xu, Weizong; Pan, Danfeng; Liang, Huinan; Wang, Ronghua; Zhu, Youhua; Ren, Fangfang; Zhou, Dong; Ye, Jiandong; Chen, Dunjun; Zhang, Rong; Zheng, Youdou; Lu, Hai 分享 收藏 
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