C. J. Humphreys - Publications, H-index & Citations

C. J. Humphreys

University of Cambridge

66H指数

812论文数

3.2W被引数

收录论文 124

发表时间

Memristors with Monolayer Graphene Electrodes Grown Directly on Sapphire Wafers 具有直接在蓝宝石晶片上生长的单层石墨烯电极的忆阻器

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-09-16

OAAI

Weng, Zhichao; Wallis, Robert; Wingfield, Bryan; Evans, Paul; Baginski, Piotr; Kainth, Jaspreet; Nikolaenko, Andrey E.; Lee, Lok Yi; Baginska, Joanna; Gillin, William P.; Guiney, Ivor; Humphreys, Colin J.; Fenwick, Oliver

Graphene on silicon: Effects of the silicon surface orientation on the work function and carrier density of graphene

PHYSICAL REVIEW B

IF3.7

2022-04-13

OAAI

Sun, Y. W.; Holec, D.; Gehringer, D.; Li, L.; Fenwick, O.; Dunstan, D. J.; Humphreys, C. J.

Significant interlayer coupling in bilayer graphene and double-walled carbon nanotubes: A refinement of obtaining strain in low-dimensional materials

PHYSICAL REVIEW B

IF3.7

2022-01-05

OAAI

Sun, Y. W.; Gehringer, D.; Holec, D.; Papageorgiou, D. G.; Fenwick, O.; Qureshi, S. M.; Humphreys, C. J.; Dunstan, D. J.

Wafer-Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light-Emitting Diodes

ADVANCED OPTICAL MATERIALS

IF7.2

2021-12-20

OAAI

Weng, Zhichao; Dixon, Sebastian C.; Lee, Lok Yi; Humphreys, Colin J.; Guiney, Ivor; Fenwick, Oliver; Gillin, William P.

Mechanical properties of graphene 石墨烯的力学性能

APPLIED PHYSICS REVIEWS

IF11.6

2021-04-19

OAAI

Sun, Y. W.; Papageorgiou, D. G.; Humphreys, C. J.; Dunstan, D. J.; Puech, P.; Proctor, J. E.; Bousige, C.; Machon, D.; San-Miguel, A.

Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers (vol 101, 125421, 2020)

PHYSICAL REVIEW B

IF3.7

2021-03-12

OAAI

Sun, Y. W.; Holec, D.; Gehringer, D.; Fenwick, O.; Dunstan, D. J.; Humphreys, C. J.

Nanomechanics of graphene oxide-bacteriophage based self-assembled porous composites 氧化石墨烯-噬菌体自组装多孔复合材料的纳米力学研究

SCIENTIFIC REPORTS

IF3.9

2020-09-24

OAAI

Sun, Yiwei; Assaretti, Paolo P.; Hernandez, Ignacio; Gonzalez, Jesus; Liu, Wei; Rodriguez, Fernando; Dunstan, David J.; Oppenheimer, Pola Goldberg; Humphreys, Colin J.

Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers

PHYSICAL REVIEW B

IF3.7

2020-03-20

OAAI

Sun, Y. W.; Holec, D.; Gehringer, D.; Fenwick, O.; Dunstan, D. J.; Humphreys, C. J.

Electronic and structural properties of partially crystallized silicon produced by solid-phase crystallization of As-deposited amorphous silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

Smith, JP; Eccleston, W; Brown, PD; Humphreys, CJ

InGaN as a Substrate for AC Photoelectrochemical Imaging

SENSORS

IF3.5

2019-10-11

OAAI

Zhou, Bo; Das, Anirban; Kappers, Menno J.; Oliver, Rachel A.; Humphreys, Colin J.; Krause, Steffi

Effect of Size on the Luminescent Efficiency of Perovskite Nanocrystals

ACS APPLIED ENERGY MATERIALS

IF5.5

2019-10-07

OAAI

Griffiths, J. T.; Rivarola, F. Wisnivesky Rocca; Davis, N. J. L. K.; Ahumada-Lazo, R.; Alanis, J. A.; Parkinson, P.; Binks, D. J.; Fu, W. Y.; De La Pena, F.; Price, M. B.; Howkins, A.; Boyd, I.; Humphreys, C. J.; Greenham, N. C.; Ducati, C.

Effect of humidity on the interlayer interaction of bilayer graphene

PHYSICAL REVIEW B

IF3.7

2019-01-02

OAAI

Qadir, A.; Sun, Y. W.; Liu, W.; Oppenheimer, P. Goldberg; Xu, Y.; Humphreys, C. J.; Dunstan, D. J.

Photomodulated Reflectivity Measurement of Free-Carrier Dynamics in InGaN/GaN Quantum Wells

ACS PHOTONICS

IF6.7

2018-10-17

OAAI

Halsall, M. P.; Crowe, I. F.; Mullins, J.; Oliver, R. A.; Kappers, M. J.; Humphreys, C. J.

Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities

PHYSICAL REVIEW B

IF3.7

2018-10-02

OAAI

Christian, G. M.; Schulz, S.; Rappers, M. J.; Humphreys, C. J.; Oliver, R. A.; Dawson, P.

Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells

MATERIALS

IF3.2

2018-09-15

OAAI

Christian, George; Kappers, Menno; Massabuau, Fabien; Humphreys, Colin; Oliver, Rachel; Dawson, Philip

All-GaN-Integrated Cascode Heterojunction Field Effect Transistors

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2017-11-01

OAAI

Jiang, Sheng; Lee, Kean Boon; Guiney, Ivor; Miaja, Pablo F.; Zaidi, Zaffar H.; Qian, Hongtu; Wallis, David J.; Forsyth, Andrew J.; Humphreys, Colin J.; Houston, Peter A.

X-ray diffraction analysis of cubic zincblende III-nitrides

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2017-09-26

OAAI

Frentrup, Martin; Lee, Lok Yi; Sahonta, Suman-Lata; Kappers, Menno J.; Massabuau, Fabien; Gupta, Priti; Oliver, Rachel A.; Humphreys, Colin J.; Wallis, David J.

Automatized convergence of optoelectronic simulations using active machine learning 使用主动机器学习的光电模拟的自动收敛

APPLIED PHYSICS LETTERS

IF3.6

2017-07-25

OAAI

Rouet-Leduc, Bertrand; Hulbert, Claudia; Barros, Kipton; Lookman, Turab; Humphreys, Colin J.

Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties

NANO LETTERS

IF9.1

2017-07-18

OAAI

Massabuau, Fabien C-P.; Rhode, Sneha L.; Horton, Matthew K.; O'Hanlon, Thomas J.; Kovacs, Andras; Zielinski, Marcin S.; Kappers, Menno J.; Dunin-Borkowski, Rafal E.; Humphreys, Colin J.; Oliver, Rachel A.

Structural impact on the nanoscale optical properties of InGaN core-shell nanorods

APPLIED PHYSICS LETTERS

IF3.6

2017-04-28

OAAI

Griffiths, J. T.; Ren, C. X.; Coulon, P. -M.; Le Boulbar, E. D.; Bryce, C. G.; Girgel, I.; Howkins, A.; Boyd, I.; Martin, R. W.; Allsopp, D. W. E.; Shields, P. A.; Humphreys, C. J.; Oliver, R. A.

研究方向