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D
Daniel Barragán-Yani
university of luxembourg
8
H指数
26
论文数
187
被引数
0
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9
发表时间
发表时间
IF
被引数
Momentum Survey Propagation: A Statistical Physics Approach to Resource Allocation in mMTC
IEEE INTERNET OF THINGS JOURNAL
IF
8.9
2025-03-01
0
PRE
AI
Ortiz, Andrea; Olshevskyi, Rostyslav; Barragan-Yani, Daniel
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Assessing the potential of perfect screw dislocations in SiC for solid-state quantum technologies
PHYSICAL REVIEW RESEARCH
IF
4.2
2024-06-07
0
OA
AI
Barragan-Yani, Daniel; Wirtz, Ludger
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Native defects in monolayer GaS and GaSe: Electrical properties and thermodynamic stability
PHYSICAL REVIEW MATERIALS
IF
3.4
2022-11-17
7
OA
AI
Barragan-Yani, Daniel; Polfus, Jonathan M.; Wirtz, Ludger
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Temperature-Dependent Adhesion in van der Waals Heterostructures
范德华异质结构中的温度依赖性粘附
ADVANCED MATERIALS INTERFACES
IF
4.4
2021-09-27
17
OA
AI
Polfus, Jonathan M.; Muniz, Marta Benthem; Ali, Ayaz; Barragan-Yani, Daniel A.; Vullum, Per Erik; Sunding, Martin F.; Taniguchi, Takashi; Watanabe, Kenji; Belle, Branson D.
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Towards intermediate-band photovoltaic absorbers: theoretical insights on the incorporation of Ti and Nb in In2S3
NPJ COMPUTATIONAL MATERIALS
IF
11.9
2020-08-03
11
OA
AI
Ghorbani, Elaheh; Barragan-Yani, Daniel; Albe, Karsten
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Point defect segregation and its role in the detrimental nature of Frank partials in Cu(In,Ga)Se2 thin-film absorbers
PHYSICAL REVIEW B
IF
3.7
2017-05-26
11
OA
AI
Sanli, E. Simsek; Barragan-Yani, D.; Ramasse, Q. M.; Albe, K.; Mainz, R.; Abou-Ras, D.; Weber, A.; Kleebe, H. -J.; van Aken, P. A.
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Atomic and electronic structure of perfect dislocations in the solar absorber materials CuInSe2 and CuGaSe2 studied by first-principles calculations
PHYSICAL REVIEW B
IF
3.7
2017-03-07
7
PRE
AI
Barragan-Yani, Daniel; Albe, Karsten
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Ferromagnetic orderings in CoxCuyZn1-(x+y)O by GGA and GGA plus U formalisms within density functional theory
COMPUTATIONAL MATERIALS SCIENCE
IF
3.3
2017-01-01
6
PRE
AI
Mendoza-Estrada, Victor; Gonzalez-Garcia, Alvaro; Barragan-Yani, Daniel; Lopez-Perez, William; Rivera-Julio, Jagger; Gonzalez-Hernandez, Rafael
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A comparative DFT study of the structural and electronic properties of nonpolar GaN surfaces
APPLIED SURFACE SCIENCE
IF
6.9
2014-09-01
15
PRE
AI
Gonzalez-Hernandez, Rafael; Gonzalez-Garcia, Alvaro; Barragan-Yani, Daniel; Lopez-Perez, William
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研究方向
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合作学者
合作期刊
T
Takashi Taniguchi
H 指数: 198 · 论文数: 5.5K
P
Peter A. van Aken
H 指数: 76 · 论文数: 658
K
Karsten Albe
H 指数: 66 · 论文数: 319
Q
Quentin M. Ramasse
H 指数: 61 · 论文数: 544
H
Hans‐Joachim Kleebe
H 指数: 54 · 论文数: 264
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