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Miaocheng Zhang

gusu laboratory

H指数:13

被引数:454

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Exploring the underlying mechanisms of ferroelectric behavior in metal-doped aluminum nitride: an in-depth review

探索金属掺杂氮化铝铁电行为的基础机制：一项深入综述

MICROSTRUCTURES

IF9

2025-12-010

PRE

Inductive effect-driven Gibbs adsorption enabling stable zinc metal anodes

诱导效应驱动的吉布斯吸附实现稳定的锌金属阳极

Journal of Energy Chemistry

IF14.9

2025-11-040

PRE

Artificial Synaptic Simulation Using Wurtzite AlScN-Based Ferroelectric Memristors

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-12-160

PRE

Perspectives of Ferroelectric Wurtzite AlScN: Material Characteristics, Preparation, and Applications in Advanced Memory Devices

铁电纤锌矿AlScN的观点: 材料特性，制备和在高级存储器件中的应用

IF4.3

2024-06-062

OAAI

Gold-catalyzed endo-selective Ring-opening of Epoxides and its Application in Construction of Poly-ethers

CHEMISTRY-A EUROPEAN JOURNAL

IF3.7

2024-02-201

PRE

Perspectives on MXene-PZT based ferroelectric memristor in computation in memory applications

基于mxene-pzt的铁电忆阻器在存储应用中的计算中的观点

APPLIED PHYSICS LETTERS

IF3.6

2023-08-074

PRE

Exploration of threshold and resistive-switching behaviors in MXene/ BaFe12O19 ferroelectric memristors

APPLIED SURFACE SCIENCE

IF6.9

2023-03-0118

PRE

Amyloid-Gold Nanoparticle Hybrids for Biocompatible Memristive Devices

IF3.2

2023-02-242

OAAI

Towards an universal artificial synapse using MXene-PZT based ferroelectric memristor

CERAMICS INTERNATIONAL

IF5.6

2022-06-0124

PRE

Emulation of multiple-functional synapses using V2C memristors with coexistence of resistive and threshold switching

使用电阻和阈值开关共存的V2C忆阻器仿真多功能突触

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2021-11-0117

PREAI

Artificial Neurons Based on Ag/V2C/W Threshold Switching Memristors

基于Ag/V2C/W阈值开关忆阻器的人工神经元

IF4.3

2021-10-2735

OAAI

First-Principles Calculation and Experimental Investigation of a Three-Atoms-Type MXene V2C and Its Effects on Memristive Devices

三原子型MXene V2C的第一性原理计算和实验研究及其对忆阻器件的影响

IEEE TRANSACTIONS ON NANOTECHNOLOGY

IF2.5

2021-01-0112

PREAI

Unsupervised Learning Implemented by Ti3C2-MXene-Based Memristive Neuromorphic System

Ti3C2-MXene-Based忆阻神经形态系统实现的无监督学习

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2020-11-0418

PREAI

Formation of new MXene film using spinning coating method with DMSO solution and its application in advanced memristive device

CERAMICS INTERNATIONAL

IF5.6

2019-10-0143

PREAI

Resistance switching characteristics and mechanisms of MXene/SiO2 structure-based memristor

APPLIED PHYSICS LETTERS

IF3.6

2019-08-0656

PREAI