David J. Meyer - Publications, H-index & Citations

David J. Meyer

United States Department of Defense

57H指数

289论文数

1.2W被引数

收录论文 41

发表时间

Dynamic Mode Suppression and Frequency Tuning in S-Band GaN/YIG Magnetoelastic HBARs

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL

IF3.7

2023-08-01

PREAI

Gokhale, Vikrant J.; Jander, Albrecht; Downey, Brian P.; Dhagat, Pallavi; Mack, Shawn C.; Katzer, D. Scott; Roussos, Jason A.; Meyer, David J.

Measurements and numerical calculations of thermal conductivity to evaluate the quality of β-gallium oxide thin films grown on sapphire and silicon carbide by molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2022-07-26

OAAI

Vaca, Diego; Barry, Matthew; Yates, Luke; Nepal, Neeraj; Katzer, D. Scott; Downey, Brian P.; Wheeler, Virginia; Nyakiti, Luke; Meyer, David J.; Graham, Samuel; Kumar, Satish

Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures

APL MATERIALS

IF4.5

2021-11-08

OAAI

Jin, Eric N.; Downey, Brian P.; Gokhale, Vikrant J.; Roussos, Jason A.; Hardy, Matthew T.; Growden, Tyler A.; Nepal, Neeraj; Katzer, D. Scott; Calame, Jeffrey P.; Meyer, David J.

Passive High Power RF Comb Filters Using Epitaxial GaN/NbN/SiC HBARs

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL

IF3.7

2021-11-01

PREAI

Gokhale, Vikrant J.; Downey, Brian P.; Roussos, Jason A.; Katzer, D. Scott; Meyer, David J.

Phase Identification and Ordered Vacancy Imaging in Epitaxial Metallic Ta2N Thin Films

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2021-03-05

OAAI

Lang, Andrew C.; Katzer, D. Scott; Nepal, Neeraj; Meyer, David J.; Stroud, Rhonda M.

An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity

SCIENCE ADVANCES

IF12.5

2021-02-19

OAAI

Dang, Phillip; Khalsa, Guru; Chang, Celesta S.; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Wheeler, Virginia D.; Sus, Alexey; Xie, Andy; Beam, Edward; Cao, Yu; Lee, Cathy; Muller, David A.; Xing, Huili Grace; Meyer, David J.; Jena, Debdeep

Band Alignment of ScxAl1-xN/GaN Heterojunctions

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2020-11-04

PREAI

Jin, Eric N.; Hardy, Matthew T.; Mock, Alyssa L.; Lyons, John L.; Kramer, Alan R.; Tadjer, Marko J.; Nepal, Neeraj; Katzer, D. Scott; Meyer, David J.

Temperature evolution of frequency and anharmonic phonon loss for multi-mode epitaxial HBARs

APPLIED PHYSICS LETTERS

IF3.6

2020-09-22

OAAI

Gokhale, Vikrant J.; Downey, Brian P.; Katzer, D. Scott; Meyer, David J.

Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes

APPLIED PHYSICS LETTERS

IF3.6

2020-03-19

OAAI

Growden, Tyler A.; Storm, David F.; Cornuelle, Evan M.; Brown, Elliott R.; Zhang, Weidong; Downey, Brian P.; Roussos, Jason A.; Cronk, Nicholas; Ruppalt, Laura B.; Champlain, James G.; Berger, Paul R.; Meyer, David J.

Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition

CHEMISTRY OF MATERIALS

IF7

2020-01-13

PREAI

Wheeler, Virginia D.; Nepal, Neeraj; Boris, David R.; Qadri, Syed B.; Nyakiti, Luke O.; Lang, Andrew; Koehler, Andrew; Foster, Geoffrey; Walton, Scott G.; Eddy, Charles R., Jr.; Meyer, David J.

930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template

APPLIED PHYSICS LETTERS

IF3.6

2019-05-22

PREAI

Growden, Tyler A.; Cornuelle, Evan M.; Storm, David F.; Zhang, Weidong; Brown, Elliott R.; Whitaker, Logan M.; Daulton, Jeffrey W.; Molnar, Richard; Meyer, David J.; Berger, Paul R.

431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes

APPLIED PHYSICS LETTERS

IF3.6

2018-01-19

OAAI

Growden, Tyler A.; Zhang, Weidong; Brown, Elliott R.; Storm, David F.; Hansen, Katurah; Fakhimi, Parastou; Meyer, David J.; Berger, Paul R.

Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates

APPLIED PHYSICS LETTERS

IF3.6

2017-04-20

126

OAAI

Hardy, Matthew T.; Downey, Brian P.; Nepal, Neeraj; Storm, David F.; Katzer, D. Scott; Meyer, David J.

I2 basal stacking fault as a degradation mechanism in reverse gate-biased AlGaN/GaN HEMTs

APPLIED PHYSICS LETTERS

IF3.6

2016-09-29

OAAI

Lang, A. C.; Hart, J. L.; Wen, J. G.; Miller, D. J.; Meyer, D. J.; Taheri, M. L.

Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy 通过分子束外延生长的AlN/GaN共振隧穿二极管中的高度可重复的室温负微分电阻

APPLIED PHYSICS LETTERS

IF3.6

2016-08-25

OAAI

Growden, Tyler A.; Storm, David F.; Zhang, Weidong; Brown, Elliott R.; Meyer, David J.; Fakhimi, Parastou; Berger, Paul R.

Combining powers of linkage and association mapping for precise dissection of QTL controlling resistance to gray leaf spot disease in maize (Zea mays L.)结合了连锁和关联映射的能力，可精确解析控制玉米 (Zea mays L.) 对灰叶斑病的抗性的QTL

BMC GENOMICS

IF3.7

2015-11-10

OAAI

Mammadov, Jafar; Sun, Xiaochun; Gao, Yanxin; Ochsenfeld, Cherie; Bakker, Erica; Ren, Ruihua; Flora, Jonathan; Wang, Xiujuan; Kumpatla, Siva; Meyer, David; Thompson, Steve

Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

APPLIED PHYSICS LETTERS

IF3.6

2014-09-04

OAAI

Deen, David A.; Storm, David F.; Meyer, David J.; Bass, Robert; Binari, Steven C.; Gougousi, Theodosia; Evans, Keith R.

Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors

APPLIED PHYSICS LETTERS

IF3.6

2011-01-14

PREAI

Deen, D. A.; Storm, D. F.; Bass, R.; Meyer, D. J.; Katzer, D. S.; Binari, S. C.; Lacis, J. W.; Gougousi, T.