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T
T.V. Torchynska
Instituto Politécnico Nacional
28
H指数
250
论文数
2.4K
被引数
0
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51
发表时间
发表时间
IF
被引数
The impact of Ga and In co-doping on structural, optical, and electrical characteristics of Mg0.20Zn0.80O films for TCO applications
Ga和In共掺杂对用于TCO应用的Mg0.20Zn0.80O薄膜的结构、光学和电学特性的影响
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
IF
2.8
2026-10-03
0
PRE
AI
T. Torchynska; A. D. Rivero Chavez; B. El Filali; G. Polupan
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Comparative Study of Structural, Optical, and Electrical Characteristics of Mg0.10Zn0.90O Films Doped with In or Ga Elements for TCO Applications
对比研究用于TCO应用的掺In或Ga元素的Mg₀.₁₀Zn₀.₉₀O薄膜的结构、光学和电学特性
Journal of Electronic Materials
IF
2.5
2026-07-01
0
PRE
AI
Torchynska, T.; El Filali, B.; Garcia, J. Oliveros; Polupan, G.; Douda, J.
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Structure, optical and electrical characteristics of Al-doped MgxZn1-xO films obtained by spray pyrolysis
MRS COMMUNICATIONS
IF
2.3
2025-10-01
0
PRE
AI
Oliveros Garcia, J.; El Filali, B.; Torchynska, T.; Polupan, G.; Douda, J.; Shcherbyna, L.
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Excitation varying of Pr3+ion emission stimulated by annealing in Si-rich HfO2:Pr films prepared by magnetron sputtering
通过磁控溅射制备的Si过量的HfO2:Pr薄膜中,由退火引起的Pr3+离子发射的激发变化
OPTICAL MATERIALS
IF
4.2
2025-07-01
0
PRE
AI
Torchynska, T.; Garcia, Jose Oliveros; Espinola, Jose Luis Casas; Macotela, Leonardo Gabriel Vega; Rojas, Luis Lartundo; Khomenkova, L.; Gourbilleau, F.
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Impact of composition of AlGaInAs confining barriers on emission of InAs quantum dots embedded in AlGaAs/GaAs dot-in-a-well heterostructures
AlGaInAs限制势垒的组成对嵌入在AlGaAs/GaAs阱内异质结构中的InAs量子点的发射的影响
OPTICAL MATERIALS
IF
4.2
2024-10-01
0
PRE
AI
Torchynska, T.; Cisneros-Tamayo, R.; Moreno, I. J. Guerrero; Polupan, G.; Stintz, A.
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Two excitation pathways of Pr3+ion emission in HfO2:Si:Pr films depending on crystalline phase transformations in annealing
JOURNAL OF LUMINESCENCE
IF
3.6
2023-06-01
1
OA
AI
Andrade, M. A. Garcia; Torchynska, T.; Espinola, J. L. Casas; Lozada, E. Velazquez; Polupan, G.; Khomenkova, L.; Gourbilleau, F.
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Emission, Er ion defects and structure of ZnO nanocrystal films prepared by ultrasonic spray pyrolysis
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF
4.6
2019-06-01
6
PRE
AI
El Filali, B.; Torchynska, T., V; Ramirez Garcia, J. L.; Casas Espinola, J. L.; Polupan, G.
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Band-edge emission, defects, morphology and structure of in-doped ZnO nanocrystal films
in掺杂ZnO纳米晶薄膜的带边发射、缺陷、形貌和结构
OPTICAL MATERIALS
IF
4.2
2019-03-01
21
PRE
AI
El Filali, B.; Jaramillo Gomez, J. A.; Torchynska, T. V.; Casas Espinola, J. L.; Shcherbyna, L.
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AlGaInAs capping layer impact on emission and structure of AlGaAs/GaAs quantum wells with InAs quantum dots
AlGaInAs覆盖层对含InAs量子点的AlGaAs/GaAs量子阱的发射和结构的影响
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF
4.6
2019-02-01
8
PRE
AI
Cisneros Tamayo, R.; Polupan, G.; Torchynska, T., V; Vega-Macotela, L. G.; Stintz, A.; Escobosa Echavarria, A.
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Emission and HR-XRD study of MBE structures with InAs quantum dots and AlGaInAs strain reducing layers
具有InAs量子点和AlGaInAs应变降低层的MBE结构的发射和hr-xrd研究
SUPERLATTICES AND MICROSTRUCTURES
IF
3.3
2018-12-01
8
PRE
AI
Torchynska, T.; Cisneros-Tamayo, R.; Vega-Macotela, L.; Polupan, G.; Escobosa-Echavarria, A.
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Luminescence, structure and aging c-axis - Oriented silver doped ZnO nanocrystalline films
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF
4.6
2018-06-01
5
PRE
AI
Torchynska, T. V.; Ballardo Rodriguez, I. Ch.; El Filali, B.; Polupan, G.; Diaz Cano, A. I.
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Emission transformation in CdSe/ZnS quantum dots conjugated to biomolecules
与生物分子共轭的CdSe/ZnS量子点中的发射转换
JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY B-BIOLOGY
IF
3.7
2017-05-01
6
PRE
AI
Torchynska, T. V.; Polupan, G.; Macotela, L. G. Vega
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Radiative defects, emission and structure of ZnO nanocrystals obtained by electrochemical method
MATERIALS RESEARCH BULLETIN
IF
5.7
2017-01-01
10
PRE
AI
El Filali, B.; Torchynska, T. V.; Polupan, G.; Shcherbyna, L.
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Surface and defect modifications in mixture of ZnO and carbon nanocrystals at mechanical processing
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF
4.6
2016-06-01
5
PRE
AI
Torchynska, T.; Perez Millan, B.; Polupan, G.; Kakazey, M.
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EPR detection of sphalerite ZnO in mechanically treated ZnO+0.1C nanosystem
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF
4.6
2015-11-01
4
PRE
AI
Kakazey, M.; Vlasova, M.; Juarez-Arellano, E. A.; Torchynska, T.
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Structural and light emitting properties of silicon-rich silicon nitride films grown by plasma enhanced-chemical vapor deposition
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF
4.6
2015-09-01
15
PRE
AI
Torchynska, T. V.; Casas Espinola, J. L.; Khomenkova, L.; Vergara Hernandez, E.; Andraca Adame, J. A.; Slaoui, A.
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Photoluminescence trend in mixture of zinc oxide and carbon nanoparticles after mechanical processing
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF
4.6
2015-09-01
5
PRE
AI
Velazquez Lozada, Erick; Torchynska, Tetyana; Casas Espinola, Jose Luis; Vivas Hernandez, Alejandro; Kakazey, Mykola; Vlasova, Marina; Shcherbyna, Lyudmyla; Castaneda, Luis
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InAs quantum dot emission and annealing impact in quantum wells with strain reduced InAlGaAs layers
JOURNAL OF LUMINESCENCE
IF
3.6
2015-07-01
1
PRE
AI
Torchynska, T. V.; Cisneros Tamayo, R.; Polupan, G.; Stints, A.; Shcherbyna, L.
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Photoluminescence and Raman scattering study in ZnO:Cu nanocrystals
JOURNAL OF LUMINESCENCE
IF
3.6
2015-05-01
35
PRE
AI
El Filali, B.; Torchynska, T. V.; Cano, A. I. Diaz
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Photoluminescence of InAs quantum dots embedded in AlGaAs/InGaAs quantum wells with strain reducing layer
SUPERLATTICES AND MICROSTRUCTURES
IF
3.3
2014-07-01
2
PRE
AI
Cisneros Tamayo, R.; Torchynska, T. V.; Polupan, G.; Guerrero Moreno, I. J.; Velazquez Lozada, E.; Shcherbyna, L.
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