未登录 β-Ga2O3 MOSFETs on highly uniform 2-in. unintentionally doped vertical Bridgman substrates 高均匀性2英寸无意掺杂垂直布里奇曼衬底上的β-Ga2O3 MOSFETs Sowers, Elizabeth; Liddy, Kyle; Bhattacharyya, Arkka; Ueda, Yuki; Islam, Ahmad; Piel, Joshua J.; Chabak, Kelson D.; Igarashi, Takuya; Koshi, Kimiyoshi; Yamakoshi, Shigenobu; Sasaki, Kohei; Kuramata, Akito; Krishnamoorthy, Sriram; Green, Andrew J. 分享 收藏
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Reliability of NiO/β-Ga2O3 bipolar heterojunction NiO/β-Ga2O3双极异质结的可靠性 Gong, Hehe; Yang, Xin; Porter, Matthew; Yang, Zineng; Wang, Bixuan; Li, Li; Fu, Lan; Sasaki, Kohei; Wang, Han; Gu, Shulin; Zhang, Rong; Ye, Jiandong; Zhang, Yuhao 分享 收藏
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Reduced temperature in lateral (AlxGa1-x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond Masten, Hannah N.; Lundh, James Spencer; Feygelson, Tatyana I.; Sasaki, Kohei; Cheng, Zhe; Spencer, Joseph A.; Liao, Pai-Ying; Hite, Jennifer K.; Pennachio, Daniel J.; Jacobs, Alan G.; Mastro, Michael A.; Feigelson, Boris N.; Kuramata, Akito; Ye, Peide; Graham, Samuel; Pate, Bradford B.; Hobart, Karl D.; Anderson, Travis J.; Tadjer, Marko J. 分享 收藏
Assessment of channel temperature in β-(AlxGa1-x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging Lundh, James Spencer; Pavlidis, Georges; Sasaki, Kohei; Centrone, Andrea; Spencer, Joseph A.; Masten, Hannah N.; Currie, Marc; Jacobs, Alan G.; Konishi, Keita; Kuramata, Akito; Hobart, Karl D.; Anderson, Travis J.; Tadjer, Marko J. 分享 收藏
Experimental determination of critical thickness limitations of (010) β-(AlxGa1-x)2O3 heteroepitaxial films Lundh, James Spencer; Huynh, Kenny; Liao, Michael; Olsen, William; Pan, Kaicheng; Sasaki, Kohei; Konishi, Keita; Masten, Hannah N.; Hite, Jennifer K.; Mastro, Michael A.; Mahadik, Nadeemullah A.; Goorsky, Mark; Kuramata, Akito; Hobart, Karl D.; Anderson, Travis J.; Tadjer, Marko J. 分享 收藏
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NiO junction termination extension for high-voltage (>3 kV) Ga2O3 devices Xiao, Ming; Wang, Boyan; Spencer, Joseph; Qin, Yuan; Porter, Matthew; Ma, Yunwei; Wang, Yifan; Sasaki, Kohei; Tadjer, Marko; Zhang, Yuhao 分享 收藏
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Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility Spencer, Joseph A.; Tadjer, Marko J.; Jacobs, Alan G.; Mastro, Michael A.; Lyons, John L.; Freitas, Jaime A.; Gallagher, James C.; Thieu, Quang T.; Sasaki, Kohei; Kuramata, Akito; Zhang, Yuhao; Anderson, Travis J.; Hobart, Karl D. 分享 收藏
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