Michael J. Uren - Publications, H-index & Citations

Michael J. Uren

University of Bristol

51H指数

372论文数

1.2W被引数

收录论文 33

发表时间

Charge Transport in GaN High Electron Mobility Transistor With Positive Substrate Bias GaN高电子迁移率晶体管在正衬底偏置下的电荷输运

IEEE Transactions on Electron Devices

IF3.2

2025-07-01

PREAI

Peng Huang; Matthew D. Smith; Michael J. Uren; Zequan Chen; Benoit Bakeroot; Anurag Vohra; Stefaan Decoutere; Martin Kuball

Gallium nitride multichannel devices with latch-induced sub-60-mV-per-decade subthreshold slopes for radiofrequency applications 氮化镓多通道器件，其具有锁存诱导的每十倍频程低于60 mV的亚阈值摆率，适用于射频应用

Nature Electronics

IF40.9

2025-05-22

OAAI

Akhil S. Kumar; Stefano Dalcanale; Michael J. Uren; James W. Pomeroy; Matthew D. Smith; Justin A. Parke; Robert S. Howell; Martin Kuball

Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates

APPLIED PHYSICS LETTERS

IF3.6

2024-08-28

OAAI

Chen, Zequan; Uren, Michael J.; Huang, Peng; Sanyal, Indraneel; Smith, Matthew D.; Vohra, Anurag; Kumar, Sujit; Decoutere, Stefaan; Bakeroot, Benoit; Kuball, Martin

Edge termination in vertical GaN diodes: Electric field distribution probed by second harmonic generation

APPLIED PHYSICS LETTERS

IF3.6

2022-06-16

OAAI

Cao, Yuke; Pomeroy, James W.; Uren, Michael J.; Yang, Feiyuan; Wang, Jingshan; Fay, Patrick; Kuball, Martin

Vertical field inhomogeneity associated with threading dislocations in GaN high electron mobility transistor epitaxial stacks

APPLIED PHYSICS LETTERS

IF3.6

2021-12-14

OAAI

Wohlfahrt, Markus; Uren, Michael J.; Yin, Yidi; Lee, Kean Boon; Kuball, Martin

Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution

NATURE ELECTRONICS

IF40.9

2021-06-21

PREAI

Cao, Yuke; Pomeroy, James W.; Uren, Michael J.; Yang, Feiyuan; Kuball, Martin

UV-induced change in channel conductivity in AlGaN/GaN high electron mobility transistors to measure doping

APPLIED PHYSICS LETTERS

IF3.6

2021-04-19

OAAI

Wohlfahrt, Markus; Uren, Michael J.; Kaess, Felix; Laboutin, Oleg; Hirshy, Hassan; Kuball, Martin

Characterization of trap states in buried nitrogen-implanted β-Ga2O3

APPLIED PHYSICS LETTERS

IF3.6

2020-12-18

PREAI

Mishra, Abhishek; Moule, Taylor; Uren, Michael J.; Wong, Man Hoi; Goto, Ken; Murakami, Hisashi; Kumagai, Yoshinao; Higashiwaki, Masataka; Kuball, Martin

Polarity dependence in Cl2-based plasma etching of GaN, AlGaN and AlN

APPLIED SURFACE SCIENCE

IF6.9

2020-08-01

PREAI

Smith, Matthew D.; Li, Xu; Uren, Michael J.; Thayne, Iain G.; Kuball, Martin

Variable range hopping mechanism and modeling of isolation leakage current in GaN-based high-electron-mobility transistors

APPLIED PHYSICS LETTERS

IF3.6

2020-06-01

OAAI

Zhu, Jiejie; Zhang, Yingcong; Uren, Michael J.; Liu, Siyu; Wang, Pengfei; Mi, Minhan; Hou, Bin; Yang, Ling; Kuball, Martin; Ma, Xiaohua; Hao, Yue

Interface state capture cross section measurements on vacuum annealed and radiation damaged Si:SiO2 surfaces

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

Uren, MJ; Nayar, V; Brunson, KM; Anthony, CJ; Stathis, JH; Cartier, E

Leakage mechanisms in GaN-on-GaN vertical pn diodes

APPLIED PHYSICS LETTERS

IF3.6

2018-06-04

OAAI

Rackauskas, B.; Dalcanale, S.; Uren, M. J.; Kachi, T.; Kuball, M.

The 2018 GaN power electronics roadmap 2018 GaN电力电子路线图

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2018-03-26

1.0K

OAAI

Amano, H.; Baines, Y.; Beam, E.; Borga, Matteo; Bouchet, T.; Chalker, Paul R.; Charles, M.; Chen, Kevin J.; Chowdhury, Nadim; Chu, Rongming; De Santi, Carlo; De Souza, Maria Merlyne; Decoutere, Stefaan; Di Cioccio, L.; Eckardt, Bernd; Egawa, Takashi; Fay, P.; Freedsman, Joseph J.; Guido, L.; Haeberlen, Oliver; Haynes, Geoff; Heckel, Thomas; Hemakumara, Dilini; Houston, Peter; Hu, Jie; Hua, Mengyuan; Huang, Qingyun; Huang, Alex; Jiang, Sheng; Kawai, H.; Kinzer, Dan; Kuball, Martin; Kumar, Ashwani; Lee, Kean Boon; Li, Xu; Marcon, Denis; Maerz, Martin; McCarthy, R.; Meneghesso, Gaudenzio; Meneghini, Matteo; Morvan, E.; Nakajima, A.; Narayanan, E. M. S.; Oliver, Stephen; Palacios, Tomas; Piedra, Daniel; Plissonnier, M.; Reddy, R.; Sun, Min; Thayne, Iain; Torres, A.; Trivellin, Nicola; Unni, V.; Uren, Michael J.; Van Hove, Marleen; Wallis, David J.; Wang, J.; Xie, J.; Yagi, S.; Yang, Shu; Youtsey, C.; Yu, Ruiyang; Zanoni, Enrico; Zeltner, Stefan; Zhang, Yuhao

Mechanism of hot electron electroluminescence in GaN-based transistors

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2016-09-29

OAAI

Brazzini, Tommaso; Sun, Huarui; Sarti, Francesco; Pomeroy, James W.; Hodges, Chris; Gurioli, Massimo; Vinattieri, Anna; Uren, Michael J.; Kuball, Martin

Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

APPLIED PHYSICS LETTERS

IF3.6

2015-05-26

OAAI

Brazzini, Tommaso; Casbon, Michael A.; Sun, Huarui; Uren, Michael J.; Lees, Jonathan; Tasker, Paul J.; Jung, Helmut; Blanck, Herve; Kuball, Martin

Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence

APPLIED PHYSICS LETTERS

IF3.6

2015-01-30

OAAI

Sun, Huarui; Bajo, Miguel Montes; Uren, Michael J.; Kuball, Martin