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Sima Dimitrijev

Griffith University

H指数:41

被引数:6,580

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Ultrasensitive Self-Powered UV Photodetector Based on a Ti/n-4H-SiC/n++-4H-SiC Double Junction

基于Ti/n-4H-SiC/n++-4H-SiC双结的超高灵敏度自驱动紫外光电探测器

ACS Applied Materials & Interfaces

IF0

2026-01-011

PRE

A Method and Criterion for Repetitive Surge Current in Silicon Carbide Schottky Diodes

一种用于碳化硅肖特基二极管的重复浪涌电流的方法和准则

IF3.6

2025-01-010

OA

Highly Efficient Photon Energy Conversion and Ultrasensitive Self-Powered Photodetection via a Monolithic p-3C-SiC Nanothin Film on p-Si/n-Si Double Junction

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2024-07-122

PRE

Observations of very fast electron traps at SiC/high-κ dielectric interfaces

IF4.5

2023-11-210

OA

The effect of wafer thinning and thermal capacitance on chip temperature of SiC Schottky diodes during surge currents

SCIENTIFIC REPORTS

IF3.9

2023-11-061

OAAI

Engineering Route for Stretchable, 3D Microarchitectures of Wide Bandgap Semiconductors for Biomedical Applications

用于生物医学应用的宽带隙半导体的可拉伸3D微架构的工程路线

ADVANCED FUNCTIONAL MATERIALS

IF19

2023-05-057

OAAI

Circuit-Specific and Technology-Independent Criterion for Selection of Power MOSFETs That Minimize Energy Dissipation

IF3.6

2023-01-011

OA

Giant Piezotronic Effect by Photoexcitation-Electronic Coupling in a p-GaN/AlGaN/GaN Heterojunction

P-gan/AlGaN/GaN异质结中光激发-电子耦合的巨型压电电子效应

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2022-06-081

PRE

Quantified density of performance-degrading near-interface traps in SiC MOSFETs

SCIENTIFIC REPORTS

IF3.9

2022-03-0825

OAAI

Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method

IF3.6

2021-01-014

OA

A Simple Equation for the Energy Stored by Voltage-Dependent Capacitances

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2020-12-017

OAAI

Metallization of crystalline silicon solar cells for shingled photovoltaic module application

用于光伏组件应用的晶体硅太阳能电池的金属化

IF6.6

2020-01-0121

PREAI

Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs

IF3.6

2020-01-015

OAAI

The Correct Equation for the Current Through Voltage-Dependent Capacitors

IF3.6

2020-01-019

OAAI

Optically Active Defects at the SiC/SiO2 Interface

SiC/SiO2界面的光学活性缺陷

PHYSICAL REVIEW APPLIED

IF4.4

2019-10-1123

OAAI

Description and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier Diodes

SCIENTIFIC REPORTS

IF3.9

2019-03-0637

OAAI

Thermoresistance of p-Type 4H-SiC Integrated MEMS Devices for High-Temperature Sensing

ADVANCED ENGINEERING MATERIALS

IF3.3

2019-01-0216

PREAI

Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications

SCIENTIFIC REPORTS

IF3.9

2017-12-1840

OAAI

Piezo-Hall effect and fundamental piezo-Hall coefficients of single crystal n-type 3C-SiC(100) with low carrier concentration

APPLIED PHYSICS LETTERS

IF3.6

2017-04-184

OAAI

Optimum top and bottom oxide thicknesses and flat-band voltages for improving subthreshold characteristics of 5 nm DGMOSFET

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2017-01-010

PREAI