Jean‐Luc Autran - Publications & Citations

Jean‐Luc Autran

aix-marseille universite

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收录论文 25

发表时间

Photovoltaic response in a resonant tunneling wire-dot-wire junction

APPLIED PHYSICS LETTERS

IF3.6

2013-07-24

PREAI

Berbezier, Aude; Autran, Jean-Luc; Michelini, Fabienne

Modeling of energy bands in ultra-thin layer quantum nanostructures for solar cell applications

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

2011-04-01

PREAI

Munteanu, D.; Autran, J. L.

Investigation of capacitance-voltage characteristics in Ge/high-κ MOS devices

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

2009-07-01

PREAI

Moreau, M.; Munteanu, D.; Autran, J-L; Bellenger, F.; Mitard, J.; Houssa, M.

Simulation study of circuit performances of independent double-gate (IDG) MOSFETs with high-permittivity gate dielectrics

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

2009-07-01

PREAI

Loussier, X.; Munteanu, D.; Autran, J. L.

Boron out-diffusion mechanism in oxide and nitride CMOS sidewall spacer: Impact of the materials properties

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2008-12-01

PREAI

Pelletier, B.; Juhel, M.; Trouiller, C.; Beucher, D.; Autran, J. L.; Morin, P.

Improved effective mass theory for silicon nanostructures

APPLIED PHYSICS LETTERS

IF3.6

2008-09-04

PREAI

Nehari, K.; Lannoo, M.; Michelini, F.; Cavassilas, N.; Bescond, M.; Autran, J. L.

Full-band study of current across silicon nanowire transistors

APPLIED PHYSICS LETTERS

IF3.6

2007-03-28

OAAI

Nehari, K.; Cavassilas, N.; Michelini, F.; Bescond, M.; Autran, J. L.; Lannoo, M.

Microscopic model for dielectric constant in metal-insulator-metal capacitors with high-permittivity metallic oxides -: art. no. 052902

APPLIED PHYSICS LETTERS

IF3.6

2006-01-31

PREAI

Bécu, S; Crémer, S; Autran, JL

Improvement of current-control induced by oxide notch in very short field-effect transistor

APPLIED PHYSICS LETTERS

IF3.6

2005-08-10

PREAI

Cavassilas, N; Bescond, M; Autran, JL

A simulation analysis of FIBL in decananometer Double-Gate MOSFETs with high-κ gate dielectrics

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

2005-07-01

PREAI

Autran, JL; Munteanu, D; Bescond, M; Houssa, M; Said, A

SiO2, advanced dielectrics and related devices 5 -: Proceedings of the 5th Franco-Italian Symposium on SiO2, Advanced Dielectrics and Related Devices -: Preface

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

2005-07-01

PREAI

Vedda, A; Munteanu, D; Ferrari, M; Paillet, P; Autran, JL

New oxide quality characterization for charge leakage applications using the floating-gate technique

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

2003-07-01

PREAI

Renard, S; Boivin, P; Autran, JL

SiO2 and Advanced Dielectrics 4 -: Proceedings of the 4th Franco-Italian Symposium on SiO2 and Advanced Dielectrics, Trento, Italy, September 16-18, 2002 -: Preface

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

2003-07-01

PREAI

Vedda, A; Autran, JL; Ferrari, M; Munteanu, D; Passacantando, M

Stretch-out of high-permittivity MOS capacitance-voltage curves resulting from a lateral non-uniform oxide charge distribution

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

2003-07-01

PREAI

Autran, JL; Munteanu, D; Dinescu, R; Houssa, M

Towards a full microscopic approach to the modeling of transistors with nanometer dimensions

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

2003-07-01

PREAI

Bescond, M; Lannoo, M; Goguenheim, D; Autran, JL

Frequency characterization and modeling of interface traps in HfSixOy/HfO2 gate dielectric stack from a capacitance point-of-view

APPLIED PHYSICS LETTERS

IF3.6

2002-10-28

PREAI

Masson, P; Autran, JL; Houssa, M; Garros, X; Leroux, C

Determination of the electrical properties of 2.5 nm thick silicon-based dielectric films:: thermally grown SiOx

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

2001-02-01

PREAI

Pic, N; Glachant, A; Nitsche, S; Hoarau, JY; Goguenheim, D; Vuillaume, D; Sibai, A; Autran, JL

Properties of SiO2 films deposited on silicon at low temperatures by plasma enhanced decomposition of hexamethyldisilazane

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

1999-04-01

PREAI

Pêcheur, A; Autran, JL; Lazarri, JP; Pinard, P

Study of hot carrier degradation in dram cells combining random telegraph signal and charge pumping measurements

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

1999-04-01

PREAI

Pierunek, S; Pogany, D; Autran, JL; Leroy, B

Theoretical and experimental study of the conduction mechanism in Al/Ta2O5/SiO2/Si and Al/Ta2O5/Si3N4/Si structures

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

1999-04-01

PREAI

Chaneliere, C; Autran, JL; Four, S; Devine, RAB; Balland, B

研究方向