未登录Effect of intrinsic strain on the evolution of photoluminescence and Raman spectra of WS2 monolayer内禀应变对WS2单层光致发光和拉曼光谱演化过程的影响
Zheng, Xiance; Tang, Zijun; Deng, Kangchen; Mo, Yutao; Liao, Jiahao; Guo, Zhichao; Chen, Shanchen; Pan, Xinyang; Zhang, Xinyu; Lan, Shuqiong; Xu, Wangying; Lin, Qiubao; Shu, Qiang; Wu, Yaping; Zhu, Huili; Zhou, Changjie
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收藏Vertical GaN Schottky barrier diodes with ohmic contact on N-polar by the atomic layer deposition of aluminum oxide interfacial layer通过氧化铝界面层的原子层沉积在N极性上具有欧姆接触的垂直GaN肖特基势垒二极管
Yang, Yongkai; Ma, Zhengweng; Jiang, Zhongwei; Li, Bo; Gao, Linfei; Li, Shuai; Lin, Qiubao; Liu, Hezhou; Xu, Wangying; Chen, Gaopan; Zhang, Chunfu; Liu, Zhihong; Chiu, Hsien-Chin; Kuo, Hao-Chung; Ao, Jin-Ping; Liu, Xinke
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收藏Prediction of ambient pressure superconductivity in cubic ternary hydrides with MH6 octahedra
Zheng, Feng; Zhang, Zhen; Wu, Zepeng; Wu, Shunqing; Lin, Qiubao; Wang, Renhai; Fang, Yimei; Wang, Cai-Zhuang; Antropov, Vladimir; Sun, Yang; Ho, Kai-Ming
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收藏Aqueous-solution-synthesized gallium oxide dielectrics for high-mobility thin-film transistors enhanced by phosphorus incorporation
Xu, Wangying; Peng, Tao; Chen, Lin; Huang, Weicheng; Zhuo, Shuangmu; Lin, Qiubao; Zhao, Chun; Xu, Fang; Zhang, Yu; Zhu, Deliang
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收藏Water-Induced Nanometer-Thin Crystalline Indium-Praseodymium Oxide Channel Layers for Thin-Film Transistors用于薄膜晶体管的水诱导纳米薄晶体氧化铟-镨沟道层
Xu, Wangying; Xu, Chuyu; Zhang, Zhibo; Huang, Weicheng; Lin, Qiubao; Zhuo, Shuangmu; Xu, Fang; Liu, Xinke; Zhu, Deliang; Zhao, Chun
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收藏Ultrahigh Deep-Ultraviolet Responsivity of a β-Ga2O3/MgO Heterostructure-Based Phototransistor
Ahn, Jungho; Ma, Jiyeon; Lee, Doeon; Lin, Qiubao; Park, Youngseo; Lee, Oukjae; Sim, Sangwan; Lee, Kyusang; Yoo, Geonwook; Heo, Junseok
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