S. D. Hersee - Publications, H-index & Citations

S. D. Hersee

united states department of energy (doe)

34H指数

149论文数

3.8K被引数

收录论文 12

发表时间

Transport characterization in nanowires using an electrical nanoprobe

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

IF2.1

2010-01-22

PREAI

Talin, A. A.; Leonard, F.; Katzenmeyer, A. M.; Swartzentruber, B. S.; Picraux, S. T.; Toimil-Molares, M. E.; Cederberg, J. G.; Wang, X.; Hersee, S. D.; Rishinaramangalum, A.

Using Electrons As a High-Resolution Probe of Optical Modes in Individual Nanowires

NANO LETTERS

IF9.1

2009-10-16

PREAI

Arslan, Ilke; Hyun, Jerome K.; Erni, Rolf; Fairchild, Michael N.; Hersee, Stephen D.; Muller, David A.

Fabrication of GaN nanowire arrays by confined epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2006-12-07

PREAI

Wang, Xin; Sun, Xinyu; Fairchild, Michael; Hersee, Stephen D.

Probing interactions of Ge with chemical and thermal SiO2 to understand selective growth of Ge on Si during molecular beam epitaxy

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2006-12-07

PREAI

Li, Qiming; Krauss, Joshua L.; Hersee, Stephen; Han, Sang M.

The controlled growth of GaN nanowires

NANO LETTERS

IF9.1

2006-07-26

641

PREAI

Hersee, Stephen D.; Sun, Xinyu; Wang, Xin

Heteroepitaxy of high-quality Ge on Si by nanoscale Ge seeds grown through a thin layer of SiO2

APPLIED PHYSICS LETTERS

IF3.6

2004-09-13

PREAI

Li, QM; Jiang, YB; Xu, HF; Hersee, S; Han, SM

Spatial phase separation of GaN selectively grown on a nanoscale faceted Si surface

APPLIED PHYSICS LETTERS

IF3.6

2004-03-22

PREAI

Lee, SC; Sun, XY; Hersee, SD; Brueck, SRJ; Xu, H

Selective growth of Ge on Si(100) through vias of SiO2 nanotemplate using solid source molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2003-12-15

137

PREAI

Li, QM; Han, SM; Brueck, SRJ; Hersee, S; Jiang, YB; Xu, HF

Strain partitioning in coherent compliant heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2002-02-04

PREAI

Zubia, D; Hersee, SD; Khraishi, T

Nanoheteroepitaxial growth of GaN on Si by organometallic vapor phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2000-02-14

PREAI

Zubia, D; Zaidi, SH; Brueck, SRJ; Hersee, SD

Nonalloyed Ti/Al ohmic contacts to n-type GaN using high-temperature premetallization anneal

APPLIED PHYSICS LETTERS

IF3.6

1996-10-28

104

PREAI

Lester, LF; Brown, JM; Ramer, JC; Zhang, L; Hersee, SD; Zolper, JC

Electron cyclotron resonance etching characteristics of GaN in SiCl4/Ar

APPLIED PHYSICS LETTERS

IF3.6

1996-01-15

PREAI

Zhang, L; Ramer, J; Brown, J; Zheng, K; Lester, LF; Hersee, SD

研究方向