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收藏Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf0.5Zr0.5O2 and Si:HfO2-based MFM capacitors
Francois, T.; Grenouillet, L.; Coignus, J.; Vaxelaire, N.; Carabasse, C.; Aussenac, F.; Chevalliez, S.; Slesazeck, S.; Richter, C.; Chiquet, P.; Bocquet, M.; Schroeder, U.; Mikolajick, T.; Gaillard, F.; Nowak, E.
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收藏Hydrogen annealing of arrays of planar and vertically stacked Si nanowires
Dornel, E.; Ernst, T.; Barbe, J. C.; Hartmann, J. M.; Delaye, V.; Aussenac, F.; Vizioz, C.; Borel, S.; Maffini-Alvaro, V.; Isheden, C.; Foucher, J.
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