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U

Uwe Schroeder

namlab

79H指数
337论文数
2.2W被引数
收录论文 110
发表时间
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IDART: Interferometric Dual-AC Resonance Tracking for Nano-Electromechanical MappingIDART：用于纳米机电映射的干涉测量双AC共振跟踪
errSmall Methods
IF9.1
err2026-09-16
err0
PREAI
errJ. Bemis; F. Wunderwald; U. Schroeder; X. Xu; A. Gruverman; R. Proksch
err分享
err收藏
Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor铁电极化调控高电子迁移率晶体管阈值电压
errAdvanced Functional Materials
IF19
err2026-09-07
err0
errOAAI
errWentian Gao; Andre Wachowiak; Thomas Mikolajick; Uwe Schroeder; Roberto Guido
err分享
err收藏
How we discovered ferroelectricity in hafnium oxide thin films如何发现氧化铪薄膜中的铁电性
errNature Electronics
IF40.9
err2026-09-04
err0
PREAI
errTim S. Böscke; Ulrich Böttger; Uwe Schroeder
err分享
err收藏
N-Type Behavior from a P-Type Dopant: Charge Compensation Mechanisms in Trivalent Y-Doped HfO2P型掺杂剂产生的N型行为：三价Y掺杂HfO2中的电荷补偿机制
errADVANCED PHYSICS RESEARCH
IF2.8
err2025-12-01
err0
errOAAI
errRehm, Oliver; Baumgarten, Lutz; Wunderwald, Florian; Fuhrberg, Andreas; During, Pia Maria; Gloskovskii, Andrei; Schlueter, Christoph; Mikolajick, Thomas; Schroeder, Uwe; Muller, Martina
err分享
err收藏
Does a Morphotropic Phase Boundary Exist in ZrxHf1-xO2-Based Thin Films?ZrxHf1-xO2基薄膜中是否存在形变畴相界？
errAdvanced Functional Materials
IF19
err2025-10-26
err0
errOAAI
errPramoda Vishnumurthy; Richard Ganser; Dong-Gyu Kim; Intak Jeon; Chang Hwa Jung; Hanjin Lim; Thomas Mikolajick; Susan Trolier-McKinstry; Alfred Kersch; Uwe Schroeder
err分享
err收藏
Correct quantification of oxygen vacancies in ferroelectric hafnia铁电氧化铪中氧空位的准确量化
errJOURNAL OF APPLIED PHYSICS
IF2.5
err2025-10-07
err0
PREAI
errPerez Ramirez, L.; Iung, T.; Yadav, V.; Lubin, C.; Schroeder, U.; Wunderwald, F.; Azevedo Antunes, L.; Kersch, A.; Back, T. C.; Weiland, C.; Gros-Jean, M.; Barrett, N.
err分享
err收藏
ZrO2 Based Multilayered Stacks with Al2O3, Y2O3 or La2O3 Interlayers for SiC Power Devices基于ZrO2的多层堆叠结构，采用Al2O3、Y2O3或La2O3中间层，用于SiC功率器件
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2025-05-02
err0
errOAAI
errKrause, S; Mikhaylov, A; Schroeder, U; Mikolajick, T; Wachowiak, A
err分享
err收藏
Ferroelectric Al1-xScxN Opposite State Retention Model Based on Switching Dynamics基于开关动力学的铁电Al₁₋ₓScₓN反态保持模型
errADVANCED FUNCTIONAL MATERIALS
IF19
err2025-03-06
err1
PREAI
errGuido, R; Gremmel, M; Mikolajick, T; Fichtner, S; Schroeder, U
err分享
err收藏
Impact of Hafnium Doping on Phase Transition, Interface, and Reliability Properties of Zr x Hf1-x O2-Based Capacitors
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2024-08-15
err2
PREAI
errVishnumurthy, Pramoda; Xu, Bohan; Wunderwald, Florian; Richter, Claudia; Rehm, Oliver; Baumgarten, Lutz; Mueller, Martina; Mikolajick, Thomas; Kersch, Alfred; Schroeder, Uwe
err分享
err收藏
Ferroelectric Al0.85Sc0.15N and Hf0.5Zr0.5O2 Domain Switching Dynamics铁电Al0.85Sc0.15N和Hf0.5Zr0.5O2畴开关动力学
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2024-07-31
err0
PREAI
errGuido, Roberto; Wang, Xuetao; Xu, Bohan; Alcala, Ruben; Mikolajick, Thomas; Schroeder, Uwe; Lomenzo, Patrick D.
err分享
err收藏
Mechanism of Antiferroelectricity in Polycrystalline ZrO2多晶ZrO2的反铁电机理
errADVANCED FUNCTIONAL MATERIALS
IF19
err2024-06-28
err1
errOAAI
errGanser, Richard; Lomenzo, Patrick D.; Collins, Liam; Xu, Bohan; Antunes, Luis Azevedo; Mikolajick, Thomas; Schroeder, Uwe; Kersch, Alfred
err分享
err收藏
Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO2双轴应变和界面层生长对ZrO2铁电唤醒和相变场的影响
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2024-06-14
err2
PREAI
errXu, Bohan; Ganser, Richard; Holsgrove, Kristina M.; Wang, Xuetao; Vishnumurthy, Pramoda; Mikolajick, Thomas; Schroeder, Uwe; Kersch, Alfred; Lomenzo, Patrick D.
err分享
err收藏
Voltage Programmable Pyroelectric Sensors With ZrO2-Based Antiferroelectrics具有ZrO2-Based反铁电体的电压可编程热释电传感器
errIEEE SENSORS JOURNAL
IF4.5
err2024-04-15
err2
PREAI
errLomenzo, Patrick D.; Li, Songrui; Xu, Bohan; Mikolajick, Thomas; Schroeder, Uwe
err分享
err收藏
Kinetics of N- to M-Polar Switching in Ferroelectric Al1-xScxN Capacitors铁电Al1-xScxN电容器中N到M极性切换的动力学
errADVANCED SCIENCE
IF14.1
err2024-02-14
err3
errOAAI
errGuido, Roberto; Lu, Haidong; Lomenzo, Patrick D.; Mikolajick, Thomas; Gruverman, Alexei; Schroeder, Uwe
err分享
err收藏
Electrically induced cancellation and inversion of piezoelectricity in ferroelectric Hf0.5Zr0.5O2
errNATURE COMMUNICATIONS
IF15.7
err2024-01-29
err4
errOAAI
errLu, Haidong; Kim, Dong-Jik; Aramberri, Hugo; Holzer, Marco; Buragohain, Pratyush; Dutta, Sangita; Schroeder, Uwe; Deshpande, Veeresh; Iniguez, Jorge; Gruverman, Alexei; Dubourdieu, Catherine
err分享
err收藏
Insights Into Curie-Temperature and Phase Formation of Ferroelectric Hf1-xZrxO2 with Oxygen Defects from a Leveled Energy Landscape从均衡的能源格局中洞察居里温度和具有氧缺陷的铁电Hf1-xZrxO2的相形成
errADVANCED MATERIALS INTERFACES
IF4.4
err2023-11-13
err5
errOAAI
errAntunes, Luis Azevedo; Ganser, Richard; Schroeder, Uwe; Mikolajick, Thomas; Kersch, Alfred
err分享
err收藏
Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO2应变是稳定ZrO2铁电性能的整体因素
errADVANCED FUNCTIONAL MATERIALS
IF19
err2023-11-10
err7
errOAAI
errXu, Bohan; Lomenzo, Patrick D.; Kersch, Alfred; Schenk, Tony; Richter, Claudia; Fancher, Chris M.; Starschich, Sergej; Berg, Fenja; Reinig, Peter; Holsgrove, Kristina M.; Kiguchi, Takanori; Mikolajick, Thomas; Boettger, Ulrich; Schroeder, Uwe
err分享
err收藏
Smart Design of Fermi Level Pinning in HfO2-Based Ferroelectric Memories
errADVANCED FUNCTIONAL MATERIALS
IF19
err2023-10-08
err7
errOAAI
errBaumgarten, Lutz; Szyjka, Thomas; Mittmann, Terence; Gloskovskii, Andrei; Schlueter, Christoph; Mikolajick, Thomas; Schroeder, Uwe; Mueller, Martina
err分享
err收藏
Roadmap on ferroelectric hafnia- and zirconia-based materials and devices铁电氧化铪和氧化锆基材料和器件路线图
errAPL MATERIALS
IF4.5
err2023-08-30
err57
errOAAI
errSilva, Jose P. B.; Alcala, Ruben; Avci, Uygar E.; Barrett, Nick; Begon-Lours, Laura; Borg, Mattias; Byun, Seungyong; Chang, Sou-Chi; Cheong, Sang-Wook; Choe, Duk-Hyun; Coignus, Jean; Deshpande, Veeresh; Dimoulas, Athanasios; Dubourdieu, Catherine; Fina, Ignasi; Funakubo, Hiroshi; Grenouillet, Laurent; Gruverman, Alexei; Heo, Jinseong; Hoffmann, Michael; Hsain, H. Alex; Huang, Fei-Ting; Hwang, Cheol Seong; Iniguez, Jorge; Jones, Jacob L.; Karpov, Ilya V.; Kersch, Alfred; Kwon, Taegyu; Lancaster, Suzanne; Lederer, Maximilian; Lee, Younghwan; Lomenzo, Patrick D.; Martin, Lane W.; Martin, Simon; Migita, Shinji; Mikolajick, Thomas; Noheda, Beatriz; Park, Min Hyuk; Rabe, Karin M.; Salahuddin, Sayeef; Sanchez, Florencio; Seidel, Konrad; Shimizu, Takao; Shiraishi, Takahisa; Slesazeck, Stefan; Toriumi, Akira; Uchida, Hiroshi; Vilquin, Bertrand; Xu, Xianghan; Ye, Kun Hee; Schroeder, Uwe
err分享
err收藏
Role of Defects in the Breakdown Phenomenon of Al1-x Sc x N: From Ferroelectric to Filamentary Resistive Switching缺陷在Al1-x Sc x N击穿现象中的作用: 从铁电到丝状电阻切换
errNANO LETTERS
IF9.1
err2023-07-31
err16
PREAI
errGuido, Roberto; Mikolajick, Thomas; Schroeder, Uwe; Lomenzo, Patrick D.
err分享
err收藏

研究方向

暂无研究方向
合作学者
合作期刊
A
Anders Hagfeldt
H 指数: 170 · 论文数: 835
K
K. Hono
H 指数: 120 · 论文数: 1.2K
K
Karl Leo
H 指数: 117 · 论文数: 1.1K
D
Darrell G. Schlom
H 指数: 110 · 论文数: 1.2K
S
Sergei V. Kalinin
H 指数: 109 · 论文数: 1.6K
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