Jen-Inn Chyi - Publications, H-index & Citations

Jen-Inn Chyi

National Central University

29H指数

172论文数

3.1K被引数

收录论文 20

发表时间

Impact of arsenic species on InAs/GaSb type II superlattice grown by molecular beam epitaxy 砷物种对分子束外延生长的InAs/GaSb型II超晶格的影响

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

IF2.1

2026-05-01

PREAI

Liu, Wei-Sheng; Chang, Po Hao; Gururajan, Balaji; Kondapavuluri, Bhavya; Ko, Tsun-Jie; Hsu, Ming-En; Liao, Yung-Jyun; Chyi, Jen-Inn

Frequency tunability of terahertz photonic transmitters

APPLIED PHYSICS LETTERS

IF3.6

2006-02-27

PREAI

Kao, TF; Chang, HH; Chen, LJ; Lu, JY; Liu, AS; Yu, YC; Wu, RB; Liu, WS; Chyi, JI; Sun, CK

1.55 μm emission from InAs quantum dots grown on GaAs -: art. no. 151903

APPLIED PHYSICS LETTERS

IF3.6

2005-10-04

PREAI

Hsieh, TP; Chiu, PC; Chyi, JI; Yeh, NT; Ho, WJ; Chang, WH; Hsu, TM

Generation of frequency-tunable nanoacoustic waves by optical coherent control

APPLIED PHYSICS LETTERS

IF3.6

2005-08-25

OAAI

Yu, CT; Lin, KH; Hsieh, CL; Pan, CC; Chyi, JI; Sun, CK

InGaAsN/GaAs quantum-well lasers using two-step and nitride passivation growth

APPLIED PHYSICS LETTERS

IF3.6

2005-08-25

PREAI

Chiu, PC; Yeh, NT; Hong, CC; Hsieh, TP; Tsai, YT; Ho, WJ; Chyi, JI

Reflection property of nano-acoustic wave at the air/GaN interface

APPLIED PHYSICS LETTERS

IF3.6

2004-11-15

PREAI

Hsieh, CL; Lin, KH; Wu, SB; Pan, CC; Chyi, JI; Sun, CK

Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions

APPLIED PHYSICS LETTERS

IF3.6

2004-04-05

OAAI

Cheng, YC; Lin, EC; Wu, CM; Yang, CC; Yang, JR; Rosenauer, A; Ma, KJ; Shi, SC; Chen, LC; Pan, CC; Chyi, JI

Diffusion mechanism and photoluminescence of erbium in GaN

OPTICAL MATERIALS

IF4.2

2003-12-01

PREAI

Ting, YS; Chen, CC; Lee, CC; Chi, GC; Chini, TK; Chakraborty, P; Chuang, HW; Tsang, JS; Kuo, CT; Tsai, WC; Chen, SH; Chyi, JI

Response to Comment on 'AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy' [Appl. Phys. Lett. 83, 3626 (2003)]

APPLIED PHYSICS LETTERS

IF3.6

2003-10-27

OAAI

Kikuchi, A; Bannai, R; Kishino, K; Lee, CM; Chyi, JI

In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K

APPLIED PHYSICS LETTERS

IF3.6

2003-03-24

146

PREAI

Jiang, L; Li, SS; Yeh, NT; Chyi, JI; Ross, CE; Jones, KS

AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2002-08-26

120

PREAI

Kikuchi, A; Bannai, R; Kishino, K; Lee, CM; Chyi, JI

Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures

APPLIED PHYSICS LETTERS

IF3.6

2002-06-10

PREAI

Feng, SW; Cheng, YC; Chung, YY; Yang, CC; Mao, MH; Lin, YS; Ma, KJ; Chyi, JI

InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2002-01-28

PREAI

Yeh, NT; Liu, WS; Chen, SH; Chiu, PC; Chyi, JI

Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells

APPLIED PHYSICS LETTERS

IF3.6

2001-01-15

PREAI

Chuo, CC; Lee, CM; Chyi, JI

Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures

APPLIED PHYSICS LETTERS

IF3.6

2000-12-04

PREAI

Chen, CC; Chuang, HW; Chi, GC; Chuo, CC; Chyi, JI

Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

APPLIED PHYSICS LETTERS

IF3.6

2000-11-06

261

PREAI

Lin, YS; Ma, KJ; Hsu, C; Feng, SW; Cheng, YC; Liao, CC; Yang, CC; Chou, CC; Lee, CM; Chyi, JI

Mechanism of luminescence in InGaN/GaN multiple quantum wells

APPLIED PHYSICS LETTERS

IF3.6

2000-06-19

OAAI

Yang, HC; Kuo, PF; Lin, TY; Chen, YF; Chen, KH; Chen, LC; Chyi, JI

Stimulated emission study of InGaN/GaN multiple quantum well structures

APPLIED PHYSICS LETTERS

IF3.6

2000-01-17

PREAI

Liao, CC; Feng, SW; Yang, CC; Lin, YS; Ma, KJ; Chuo, CC; Lee, CM; Chyi, JI

Suppression of electron and hole leakage in 1.3 μm AlGaInAs/InP quantum well lasers using multiquantum barrier

APPLIED PHYSICS LETTERS

IF3.6

1998-04-27

PREAI

Pan, JW; Chau, KG; Chyi, JI; Tu, YK; Liaw, JW

High-speed InGaAs metal-semiconductor-metal photodetectors with improved responsivity and process yield

OPTICAL AND QUANTUM ELECTRONICS

IF4

1996-10-01

PREAI

Yuang, RH; Chyi, JI; Lin, W; Tu, YK

研究方向