Nikolai V. Abrosimov - Publications, H-index & Citations

Nikolai V. Abrosimov

institute of metal physics ub ras

17H指数

60论文数

2.3K被引数

收录论文 10

发表时间

Electron nuclear double resonance with donor-bound excitons in silicon

PHYSICAL REVIEW B

IF3.7

2016-12-06

OAAI

Franke, David P.; Szech, Michael; Hrubesch, Florian M.; Riemann, Helge; Abrosimov, Nikolai V.; Becker, Peter; Pohl, Hans-Joachim; Itoh, Kohei M.; Thewalt, Michael L. W.; Brandt, Martin S.

Optically enabled magnetic resonance study of 75As and 121Sb in 28Si (vol 92, 195203, 2015)

PHYSICAL REVIEW B

IF3.7

2016-06-20

OAAI

Salvail, Jeff Z.; Dluhy, Phillip; Morse, Kevin J.; Szech, Michael; Saeedi, Kamyar; Huber, Julian; Riemann, Helge; Abrosimov, Nikolai V.; Becker, Peter; Pohl, Hans-Joachim; Thewalt, Michael L. W.

Spin relaxation and donor-acceptor recombination of Se+ in 28-silicon

PHYSICAL REVIEW B

IF3.7

2015-10-07

OAAI

Lo Nardo, Roberto; Wolfowicz, Gary; Simmons, Stephanie; Tyryshkin, Alexei M.; Riemann, Helge; Abrosimov, Nikolai V.; Becker, Peter; Pohl, Hans-Joachim; Steger, Michael; Lyon, Stephen A.; Thewalt, Mike L. W.; Morton, John J. L.

Hyperfine Stark effect of shallow donors in silicon

PHYSICAL REVIEW B

IF3.7

2014-11-18

OAAI

Pica, Giuseppe; Wolfowicz, Gary; Urdampilleta, Matias; Thewalt, Mike L. W.; Riemann, Helge; Abrosimov, Nikolai V.; Becker, Peter; Pohl, Hans-Joachim; Morton, John J. L.; Bhatt, R. N.; Lyon, S. A.; Lovett, Brendon W.

Atomic clock transitions in silicon-based spin qubits (vol 8, pg 561, 2013)

NATURE NANOTECHNOLOGY

IF34.9

2013-11-07

OAAI

Wolfowicz, Gary; Tyryshkin, Alexei M.; George, Richard E.; Riemann, Helge; Abrosimov, Nikolai V.; Becker, Peter; Pohl, Hans-Joachim; Thewalt, Mike L. W.; Lyon, Stephen A.; Morton, John J. L.

Atomic clock transitions in silicon-based spin qubits

NATURE NANOTECHNOLOGY

IF34.9

2013-06-23

224

OAAI

Wolfowicz, Gary; Tyryshkin, Alexei M.; George, Richard E.; Riemann, Helge; Abrosimov, Nikolai V.; Becker, Peter; Pohl, Hans-Joachim; Thewalt, Mike L. W.; Lyon, Stephen A.; Morton, John J. L.

Decoherence mechanisms of 209Bi donor electron spins in isotopically pure 28Si

PHYSICAL REVIEW B

IF3.7

2012-12-04

OAAI

Wolfowicz, Gary; Simmons, Stephanie; Tyryshkin, Alexei M.; George, Richard E.; Riemann, Helge; Abrosimov, Nikolai V.; Becker, Peter; Pohl, Hans-Joachim; Lyon, Stephen A.; Thewalt, Mike L. W.; Morton, John J. L.

Smart silicon: Switching between p- and n-conduction under compression

APPLIED PHYSICS LETTERS

IF3.6

2012-08-06

PREAI

Ovsyannikov, Sergey V.; Korobeinikov, Igor V.; Morozova, Natalia V.; Misiuk, Andrzej; Abrosimov, Nikolai V.; Shchennikov, Vladimir V.

Violation of a Leggett-Garg inequality with ideal non-invasive measurements 理想的非侵入性测量违反了leggett-garg不等式

NATURE COMMUNICATIONS

IF15.7

2012-01-03

126

OAAI

Knee, George C.; Simmons, Stephanie; Gauger, Erik M.; Morton, John J. L.; Riemann, Helge; Abrosimov, Nikolai V.; Becker, Peter; Pohl, Hans-Joachim; Itoh, Kohei M.; Thewalt, Mike L. W.; Briggs, G. Andrew D.; Benjamin, Simon C.

Electron spin coherence exceeding seconds in high-purity silicon

NATURE MATERIALS

IF38.5

2011-12-04

628

OAAI

Tyryshkin, Alexei M.; Tojo, Shinichi; Morton, John J. L.; Riemann, Helge; Abrosimov, Nikolai V.; Becker, Peter; Pohl, Hans-Joachim; Schenkel, Thomas; Thewalt, Michael L. W.; Itoh, Kohei M.; Lyon, S. A.

研究方向