arrow
返回

Atomic clock transitions in silicon-based spin qubits

delete2013-06-23
delete224
delete
OA
AI
G
Gary Wolfowicz *
A
Alexei M. Tyryshkin
R
Richard E. George
H
H. Riemann
N
Nikolai V. Abrosimov
P
Peter Becker
H
Hans-Joachim Pohl
M
M. L. W. Thewalt
S
S. A. Lyon
J
John J. L. Morton
DOI:10.1038/NNANO.2013.117delete
delete原文链接
delete原文求助
delete分享
delete收藏
摘要

摘要

En 中文
A major challenge in using spins in the solid state for quantum technologies is protecting them from sources of decoherence. This is particularly important in nanodevices where the proximity of material interfaces, and their associated defects, can play a limiting role. Spin decoherence can be addressed to varying degrees by improving material purity or isotopic composition(1,2), for example, or active error correction methods such as dynamic decoupling(3,4) (or even combinations of the two(5,6)). However, a powerful method applied to trapped ions in the context of atomic clocks(7,8) is the use of particular spin transitions that are inherently robust to external perturbations. Here, we show that such 'clock transitions' can be observed for electron spins in the solid state, in particular using bismuth donors in silicon(9,10). This leads to dramatic enhancements in the electron spin coherence time, exceeding seconds. We find that electron spin qubits based on clock transitions become less sensitive to the local magnetic environment, including the presence of Si-29 nuclear spins as found in natural silicon. We expect the use of such clock transitions will be of additional significance for donor spins in nanodevices(11), mitigating the effects of magnetic or electric field noise arising from nearby interfaces and gates.
Keyword:
FREQUENCY STANDARD
QUANTUM
COHERENCE

期刊

Nature Nanotechnology 封面图
Nature Nanotechnology
IF:
34.9
论文数:
4.8K
被引数:
8.1W

机构

S
Simon Fraser University
学者数:
1.0W
论文数: 1.0W
被引数: 1.4W
P
Princeton University
学者数:
2.1W
论文数: 2.3W
被引数: 5.1W
L
leibniz institut fur kristallzuchtung (ikz)
学者数:
284
论文数: 195
被引数: 0
P
physikalisch-technische bundesanstalt (ptb)
学者数:
2.1K
论文数: 1.6K
被引数: 0
U
university of oxford
学者数:
9.8W
论文数: 8.6W
被引数: 137
U
university of london
学者数:
21.5W
论文数: 19.7W
被引数: 305
学者 查看更多机构
引用论文

引用论文

A transfer-free wafer-scale CVD graphene fabrication process for MEMS/NEMS sensors
err2016-01-01
err0
errOAAI
errS. Vollebregt; B. Alfano; F. Ricciardella; A. J. M. Giesbers; Y. Grachova; H. W. van Zeijl; T. Polichetti; P. M. Sarro
err分享
err收藏
Diabetes-Related Major and Minor Amputation Risk Increased During the COVID-19 Pandemic
err2023-03-01
err0
errOAAI
errDominick J. Casciato; Sara Yancovitz; John Thompson; Steven Anderson; Alex Bischoff; Shauna Ayres; Ian Barron
err分享
err收藏
Analysis of quantum coherence in bismuth-doped silicon: A system of strongly coupled spin qubits
err2012-03-05
err35
errOAAI
errMohammady, M. H.; Morley, G. W.; Nazir, A.; Monteiro, T. S.
err分享
err收藏
Decoherence mechanisms of 209Bi donor electron spins in isotopically pure 28Si
err2012-12-04
err34
errOAAI
errWolfowicz, Gary; Simmons, Stephanie; Tyryshkin, Alexei M.; George, Richard E.; Riemann, Helge; Abrosimov, Nikolai V.; Becker, Peter; Pohl, Hans-Joachim; Lyon, Stephen A.; Thewalt, Mike L. W.; Morton, John J. L.
err分享
err收藏
COVID-19 outcomes in UK centre within highest health and wealth band: a prospective cohort study
err2020-11-16
err0
errOAAI
errGie Ken-Dror; Charles Wade; Shyam Sharma; Jessica Law; Cristina Russo; Aarti Sharma; Elizabeth Joy; Joshua John; Jonathan Robin; Sarah John; Karim Mahana; David Fluck; Paul Bentley; Pankaj Sharma
err分享
err收藏
Electrical activation and electron spin coherence of ultralow dose antimony implants in silicon
err2006-03-13
err86
errOAAI
errSchenkel, T; Liddle, JA; Persaud, A; Tyryshkin, AM; Lyon, SA; de Sousa, R; Whaley, KB; Bokor, J; Shangkuan, J; Chakarov, I
err分享
err收藏
Enhancing the privacy of electronic passports
err2012-01-01
err0
errOAAI
errRima Belguechi; Patrick Lacharme; Christophe Rosenberger
err分享
err收藏
学者 查看更多内容