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Bastien Douhard

interuniversity microelectronics centre

23H指数
129论文数
1.6K被引数
收录论文 15
发表时间
Bipolar device fabrication using a scanning tunnelling microscope
err2020-07-27
err31
PREAI
errSkeren, Tomas; Koester, Sigrun A.; Douhard, Bastien; Fleischmann, Claudia; Fuhrer, Andreas
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Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si
err2018-11-07
err0
PREAI
errGupta, S.; Shimura, Y.; Richard, O.; Douhard, B.; Simoen, E.; Bender, H.; Nakatsuka, O.; Zaima, S.; Loo, R.; Heyns, M.
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Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure
err2016-10-01
err6
PREAI
errJayachandran, Suseendran; Billen, Arne; Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Moussa, Alain; Caymax, Matty; Bender, Hugo; Vandervorst, Wilfried; Heyns, Marc; Delabie, Annelies
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Self Focusing SIMS: Probing thin film composition in very confined volumes
err2016-03-01
err23
PREAI
errFranquet, Alexis; Douhard, Bastien; Melkonyan, Davit; Favia, Paola; Conard, Thierry; Vandervorst, Wilfried
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Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry在Si(100) 衬底上沉积O原子层用于外延si-o超晶格: 表面化学研究
err2015-01-01
err12
PREAI
errJayachandran, Suseendran; Delabie, Annelies; Billen, Arne; Dekkers, Harold; Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Caymax, Matty; Vandervorst, Wilfried; Heyns, Marc
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On the local conductivity of individual diamond seeds and their impact on the interfacial resistance of boron-doped diamond films
errCARBON
IF11.6
err2014-11-01
err28
PREAI
errTsigkourakos, Menelaos; Hantschel, Thomas; Simon, Daniel K.; Nuytten, Thomas; Verhulst, Anne S.; Douhard, Bastien; Vandervorst, Wilfried
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Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
err2011-10-11
err218
errOAAI
errVincent, B.; Gencarelli, F.; Bender, H.; Merckling, C.; Douhard, B.; Petersen, D. H.; Hansen, O.; Henrichsen, H. H.; Meersschaut, J.; Vandervorst, W.; Heyns, M.; Loo, R.; Caymax, M.
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Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation
err2011-01-05
err40
PREAI
errMartens, Koen; Rooyackers, R.; Firrincieli, A.; Vincent, B.; Loo, R.; De Jaeger, B.; Meuris, M.; Favia, P.; Bender, H.; Douhard, B.; Vandervorst, W.; Simoen, E.; Jurczak, M.; Wouters, D. J.; Kittl, J. A.
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Ge Chemical Vapor Deposition on GaAs for Low Resistivity Contacts
err2011-01-01
err2
PREAI
errVincent, B.; Firrincieli, A.; Wang, W. -E.; Waldron, N.; Franquet, A.; Douhard, B.; Vandervorst, W.; Clarysse, T.; Brammertz, G.; Loo, R.; Dekoster, J.; Meuris, M.; Caymax, M.
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Polarization Dependence of the C 1s X-ray Absorption Spectra of Individual Multi-Walled Carbon Nanotubes
errSMALL
IF12.1
err2008-12-04
err44
PREAI
errNajafi, Ebrahim; Cruz, Daniel Hernandez; Obst, Martin; Hitchcock, Adain P.; Douhard, Bastien; Pireaux, Jean-Jacques; Felten, Alexandre
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The Storing Matter technique: Preliminary results on PS and PVC
err2008-12-01
err5
PREAI
errPhilipp, P.; Douhard, B.; Lacour, F.; Wirtz, T.; Houssiau, L.; Pireaux, J. -J.; Migeon, H. -N.
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Atomically flat GaMnN by diffusion of mn into GaN(000$$(1)over-bar)
err2006-10-01
err6
PREAI
errDumont, J.; Kowalski, B. J.; Pietrzyk, M.; Seldrum, T.; Houssiau, L.; Douhard, B.; Grzegory, I.; Porowski, S.; Sporken, R.
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