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收藏Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si
Gupta, S.; Shimura, Y.; Richard, O.; Douhard, B.; Simoen, E.; Bender, H.; Nakatsuka, O.; Zaima, S.; Loo, R.; Heyns, M.
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收藏Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure
Jayachandran, Suseendran; Billen, Arne; Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Moussa, Alain; Caymax, Matty; Bender, Hugo; Vandervorst, Wilfried; Heyns, Marc; Delabie, Annelies
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收藏Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry在Si(100) 衬底上沉积O原子层用于外延si-o超晶格: 表面化学研究
Jayachandran, Suseendran; Delabie, Annelies; Billen, Arne; Dekkers, Harold; Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Caymax, Matty; Vandervorst, Wilfried; Heyns, Marc
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收藏Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
Vincent, B.; Gencarelli, F.; Bender, H.; Merckling, C.; Douhard, B.; Petersen, D. H.; Hansen, O.; Henrichsen, H. H.; Meersschaut, J.; Vandervorst, W.; Heyns, M.; Loo, R.; Caymax, M.
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收藏Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation
Martens, Koen; Rooyackers, R.; Firrincieli, A.; Vincent, B.; Loo, R.; De Jaeger, B.; Meuris, M.; Favia, P.; Bender, H.; Douhard, B.; Vandervorst, W.; Simoen, E.; Jurczak, M.; Wouters, D. J.; Kittl, J. A.
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收藏Ge Chemical Vapor Deposition on GaAs for Low Resistivity Contacts
Vincent, B.; Firrincieli, A.; Wang, W. -E.; Waldron, N.; Franquet, A.; Douhard, B.; Vandervorst, W.; Clarysse, T.; Brammertz, G.; Loo, R.; Dekoster, J.; Meuris, M.; Caymax, M.
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