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Bipolar device fabrication using a scanning tunnelling microscope
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DOI：10.1038/s41928-020-0445-5.png)
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Hydrogen-resist lithography with the tip of a scanning tunnelling microscope can be used to fabricate atomic-scale dopant devices in silicon substrates and could potentially be used to build a dopant-based quantum computer. However, all devices fabricated so far have been based on the n-type dopant precursor phosphine. Here, we show that diborane can be used as a p-type dopant precursor, allowing p-type and bipolar dopant devices to be created. Characterization of diborane delta-layers reveals that similar mobilities and densities can be achieved as for phosphine, with sheet resistivities as low as 300 Omega square(-1). Scanning tunnelling microscope imaging and transport measurements of a 5.5-nm-wide p-type dopant nanowire give an estimated upper bound of 2 nm for the lithographic resolution of the p-type dopant profiles. By combining our p-type doping approach with established phosphine-based n-type doping, we fabricate a 100-nm-wide p-n junction and show that its electrical behaviour is similar to that of an Esaki diode.
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