未登录

H

Hongshan Xiao

Peking University

H指数:6

被引数:310

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Order of magnitude improvement in the transport performance of carbon nanotube films by completely removing surfactants

IF11.6

2024-01-013

PRE

Interface and Border Traps in the Gate Stack of Carbon Nanotube Film Transistors with an Yttria Dielectric

具有氧化钇电介质的碳纳米管薄膜晶体管的栅极堆叠中的界面和边界陷阱

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-07-106

PRE

High-yield and low-cost separation of high-purity semiconducting single-walled carbon nanotubes with closed-loop recycling of raw materials and solvents

通过原料和溶剂的闭环循环，高收率和低成本分离高纯度半导体单壁碳纳米管

IF9

2021-07-0415

PREAI

Radiation-hardened and repairable integrated circuits based on carbon nanotube transistors with ion gel gates

NATURE ELECTRONICS

IF40.9

2020-08-2463

PREAI

Polarity tuning of carbon nanotube transistors by chemical doping for printed flexible complementary metal-oxide semiconductor (CMOS)-like inverters

IF11.6

2019-06-0123

PREAI

Optoelectronic Properties of Printed Photogating Carbon Nanotube Thin Film Transistors and Their Application for Light-Stimulated Neuromorphic Devices

印刷光栅碳纳米管薄膜晶体管的光电特性及其在光刺激神经形态器件中的应用

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2019-02-2887

PREAI

Highly flexible printed carbon nanotube thin film transistors using cross-linked poly(4-vinylphenol) as the gate dielectric and application for photosenstive light-emitting diode circuit

IF11.6

2018-07-0117

PREAI