R. A. B. Devine - Publications, H-index & Citations

R. A. B. Devine

new mexico institute of mining technology

43H指数

338论文数

6.9K被引数

收录论文 23

发表时间

Tunneling discharge of positive trapped oxide charge in p-channel field effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2011-08-25

PREAI

Kambour, K. E.; Kouhestani, C.; Nguyen, D.; Rosen, N.; Devine, R. A. B.

Interface design to improve stability of polymer solar cells for potential space applications

ENERGY & ENVIRONMENTAL SCIENCE

IF30.8

2011-01-01

PREAI

Kumar, Ankit; Rosen, Nadav; Devine, Roderick; Yang, Yang

Origin of Radiation-Induced Degradation in Polymer Solar Cells

ADVANCED FUNCTIONAL MATERIALS

IF19

2010-06-25

PREAI

Kumar, Ankit; Devine, Roderick; Mayberry, Clay; Lei, Bao; Li, Gang; Yang, Yang

Negative bias temperature instability and relaxation in HfSiON gate stack field effect devices

APPLIED PHYSICS LETTERS

IF3.6

2008-04-18

PREAI

Devine, R. A. B.; Hjalmarson, H. P.; Alshareef, H. N.; Quevedo-Lopez, M.

Negative bias temperature instability and Fowler-Nordheim injection in silicon oxynitride insulators

APPLIED PHYSICS LETTERS

IF3.6

2007-04-20

PREAI

Busani, T.; Devine, R. A. B.; Hughes, H. L.

X-ray irradiation effects in top contact, pentacene based field effect transistors for space related applications

APPLIED PHYSICS LETTERS

IF3.6

2006-04-12

PREAI

Devine, RAB; Ling, MM; Mallik, AB; Roberts, M; Bao, Z

Molecular volume dependence of the electronic and ionic polarizabilities in TiO2 and SiO2 -: art. no. 062902

APPLIED PHYSICS LETTERS

IF3.6

2005-01-31

PREAI

Devine, RAB; Busani, T

Temperature-dependent current transport in low-k inorganic dielectrics

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2004-01-01

PREAI

Tringe, JW; Solomon, JS; Devine, RAB

Irradiation and humidity effects on the leakage current in SiOx(CH3)y-based intermetal dielectric films

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2003-01-01

PREAI

Devine, RAB; Ball, D; Rowe, JD; Tringe, JW

Electronic traps in mixed Si1-xGexO2 films

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

2001-02-01

PREAI

Busani, T; Devine, RAB; Martini, M; Spinolo, G; Vedda, A

A non-volatile MOSFET memory device based on mobile protons in SiO2 thin films

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

1999-09-01

OAAI

Vanheusden, K; Warren, WL; Devine, RAB; Fleetwood, DM; Draper, BL; Schwank, JR

Properties of tantalum pentoxide (Ta2O5) obtained by plasma assisted deposition using a TaF5 source

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

1999-09-01

PREAI

Four, S; Devine, RAB; Luo, EZ; Wilson, IH; Cheng, HS

Growth kinetics and physical characterisation of Si1-xGexO2 films obtained by plasma assisted oxidation

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

1999-09-01

PREAI

Busani, T; Plantier, H; Devine, RAB; Hernandez, C; Campidelli, Y

Theoretical and experimental study of the conduction mechanism in Al/Ta2O5/SiO2/Si and Al/Ta2O5/Si3N4/Si structures

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

1999-04-01

PREAI

Chaneliere, C; Autran, JL; Four, S; Devine, RAB; Balland, B

Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films

APPLIED PHYSICS LETTERS

IF3.6

1998-08-03

PREAI

Vanheusden, K; Warren, WL; Fleetwood, DM; Schwank, JR; Shaneyfelt, MR; Draper, BL; Winokur, PS; Devine, RAB; Archer, LB; Brown, GA; Wallace, RM

Study of Ge bonding and distribution in plasma oxides of Si1-xGex alloys

APPLIED PHYSICS LETTERS

IF3.6

1998-05-25

PREAI

Seck, M; Devine, RAB; Hernandez, C; Campidelli, Y; Dupuy, JC

Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications

MATERIALS SCIENCE & ENGINEERING R-REPORTS

IF26.8

1998-05-01

716

PREAI

Chaneliere, C; Autran, JL; Devine, RAB; Balland, B

Thermally activated electron capture by mobile protons in SiO2 thin films

APPLIED PHYSICS LETTERS

IF3.6

1998-01-05

PREAI

Vanheusden, K; Kama, SP; Pugh, RD; Warren, WL; Fleetwood, DM; Devine, RAB; Edwards, AH

Proceedings of the Franco-Italian Symposium on Structure and Defects in SiO2, Fundamentals and Applications - Agelonde, France - September 23-25 1996 - Preface

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

1997-08-01

PREAI

Devine, RAB; Spinolo, G; Autran, JL; Vedda, A

Interfacial hardness enhancement in deuterium annealed 0.25 mu m channel metal oxide semiconductor transistors

APPLIED PHYSICS LETTERS

IF3.6

1997-06-02

PREAI

Devine, RAB; Autran, JL; Warren, WL; Vanheusdan, KL; Rostaing, JC

研究方向