Wilfried von Ammon - Publications, H-index & Citations

Point defect dynamics and the oxidation-induced stacking-fault ring in Czochralski-grown silicon crystals

IF3.3

2019-12-06

PREAI

Kissinger, G; Grabolla, T; Morgenstern, G; Richter, H; Gräf, D; Vanhellemont, J; Lambert, U; von Ammon, W

Characterization of crystal quality by crystal originated particle delineation and the impact on the silicon wafer surface

IF3.3

2019-12-06

148

PREAI

Sinno, T; Brown, RA; von Ammon, W; Dornberger, E

NeoGrowth silicon: A new high purity, low-oxygen crystal growth technique for photovoltaic substrates 新生长硅: 一种用于光伏衬底的新型高纯度，低氧晶体生长技术

IF3.3

2019-12-06

PREAI

Graf, D; Suhren, M; Lambert, U; Schmolke, R; Ehlert, A; von Ammon, W; Wagner, P

PROGRESS IN PHOTOVOLTAICS

IF7.6

2018-01-17

PREAI

Stoddard, Nathan; Russell, Joshua; Hixson, Earl C.; She, Hui; Krause, Andreas; Wolny, Franziska; Bertoni, Mariana; Naerland, Tine Uberg; Sylla, Lamine; von Ammon, Wilfried

Modeling the Early Stages of Oxygen Agglomeration

Interaction of oxygen with thermally induced vacancies in Czochralski silicon

IF3.3

2011-01-01

PREAI

Kissinger, G.; Dabrowski, J.; Kot, D.; Akhmetov, V.; Sattler, A.; von Ammon, W.

IF3.6

2009-03-03

PREAI

Akhmetov, V.; Kissinger, G.; von Ammon, W.

Analytical modeling of the interaction of vacancies and oxygen for oxide precipitation in RTA treated silicon wafers

IF3.6

2007-10-08

PREAI

Wagner, H. E.; Alt, H. Ch.; von Ammon, W.; Bittersberger, F.; Huber, A.; Koester, L.

Combination of optical measurement and precipitation theory to overcome the obstacles of detection limits

IF3.3

2007-01-01

PREAI

Kissinger, G.; Dabrowski, J.; Sattler, A.; Seuring, C.; Mueller, T.; Richter, H.; von Ammon, W.

Investigation of Ostwald ripening in nitrogen doped Czochralski silicon -: art. no. 101904

IF4.6

2006-02-01

PREAI

Kissinger, G.; Mueller, T.; Sattler, A.; Haeckl, W.; Krottenthalerc, P.; Grabolla, T.; Richter, H.; von Ammon, W.

A systems-based approach for generating quantitative models of microstructural evolution in silicon materials processing

IF3.6

2005-08-30

PREAI

Kissinger, G; Huber, A; Nakai, K; Lysytskij, O; Müller, T; Richter, H; von Ammon, W

COMPUTERS & CHEMICAL ENGINEERING

IF3.9

2005-03-01

PREAI

Frewen, TA; Sinno, T; Haeckl, W; von Ammon, W

Global parameterization of multiple point-defect dynamics models in silicon

Application of dynamic and combined magnetic fields in the 300mm silicon single-crystal growth 动态复合磁场在300毫米硅单晶生长中的应用

IF3.3

2003-01-01

PREAI

Frewen, RA; Sinno, T; Dornberger, E; Hoelzl, R; von Ammon, W; Bracht, H

Silicon melt convection in large size Czochralski crucibles

IF4.6

2002-08-01

PREAI

Tomzig, E; Virbulis, J; von Ammon, W; Gelfgat, Y; Gorbunov, L

Prediction of bulk defects in CZ Si crystals using 3D unsteady calculations of melt convection

IF4.6

2002-08-01

PREAI

Virbulis, J; Wetzel, T; Tomzig, E; von Ammon, W

Crystal growth melt flow control by means of magnetic fields

IF4.6

2002-08-01

PREAI

Kalaev, VV; Lukanin, DP; Zabelin, VA; Makarov, YN; Virbulis, J; Dornberger, E; von Ammon, W

ENERGY CONVERSION AND MANAGEMENT

IF10.9

2002-02-01

PREAI

Galindo, V; Gerbeth, G; von Ammon, W; Tomzig, E; Virbulis, J

Defect engineering of Czochralski single-crystal silicon

MATERIALS SCIENCE & ENGINEERING R-REPORTS

IF26.8

2000-07-01

131

PREAI

Sinno, T; Dornberger, E; von Ammon, W; Brown, RA; Dupret, F

Boron retarded self-interstitial diffusion in Czochralski growth of silicon crystals and its role in oxidation-induced stacking-fault ring dynamics