Yu.N. Makarov - Publications, H-index & Citations

Yu.N. Makarov

ITMO University

35H指数

211论文数

3.9K被引数

收录论文 16

发表时间

Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry

SCIENTIFIC REPORTS

IF3.9

2020-02-10

OAAI

Reshchikov, M. A.; Vorobiov, M.; Andrieiev, O.; Ding, K.; Izyumskaya, N.; Avrutin, V; Usikov, A.; Helava, H.; Makarov, Yu

Unusual properties of the RY3 center in GaN

PHYSICAL REVIEW B

IF3.7

2019-07-18

OAAI

Reshchikov, M. A.; Sayeed, R. M.; Ozgur, U.; Demchenko, D. O.; McNamara, J. D.; Prozheeva, V; Tuomisto, F.; Helava, H.; Usikov, A.; Makarov, Yu

Two yellow luminescence bands in undoped GaN

SCIENTIFIC REPORTS

IF3.9

2018-05-25

OAAI

Reshchikov, M. A.; McNamara, J. D.; Helava, H.; Usikov, A.; Makarov, Yu.

Evaluation of the concentration of point defects in GaN

SCIENTIFIC REPORTS

IF3.9

2017-08-24

OAAI

Reshchikov, M. A.; Usikov, A.; Helava, H.; Makarov, Yu.; Prozheeva, V.; Makkonen, I.; Tuomisto, F.; Leach, J. H.; Udwary, K.

Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

SCIENTIFIC REPORTS

IF3.9

2016-11-30

OAAI

Reshchikov, M. A.; McNamara, J. D.; Toporkov, M.; Avrutin, V.; Morkoc, H.; Usikov, A.; Helava, H.; Makarov, Yu.

Zero-phonon line and fine structure of the yellow luminescence band in GaN

PHYSICAL REVIEW B

IF3.7

2016-07-05

OAAI

Reshchikov, M. A.; McNamara, J. D.; Zhang, F.; Monavarian, M.; Usikov, A.; Helava, H.; Makarov, Yu.; Morkoc, H.

Optically generated giant traps in high-purity GaN

PHYSICAL REVIEW B

IF3.7

2016-02-02

OAAI

Reshchikov, M. A.; McNamara, J. D.; Usikov, A.; Helava, H.; Makarov, Yu.

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

PHYSICAL REVIEW B

IF3.7

2014-12-12

171

OAAI

Reshchikov, M. A.; Demchenko, D. O.; Usikov, A.; Helava, H.; Makarov, Yu.

Electrical, optical, and structural properties of GaN films prepared by hydride vapor phase epitaxy

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2014-12-01

PREAI

Polyakov, A. Y.; Smirnov, N. B.; Yakimov, E. B.; Usikov, A. S.; Helava, H.; Shcherbachev, K. D.; Govorkov, A. V.; Makarov, Yu N.; Lee, In-Hwan

Fine structure of the red luminescence band in undoped GaN

APPLIED PHYSICS LETTERS

IF3.6

2014-01-21

OAAI

Reshchikov, M. A.; Usikov, A.; Helava, H.; Makarov, Yu.

Identification of the VAl-ON defect complex in AlN single crystals

PHYSICAL REVIEW B

IF3.7

2011-08-29

PREAI

Maki, J-M; Makkonen, I.; Tuomisto, F.; Karjalainen, A.; Suihkonen, S.; Raisanen, J.; Chemekova, T. Yu; Makarov, Yu N.

Optical phohon decay in bulk aluminum nitride

APPLIED PHYSICS LETTERS

IF3.6

2006-07-10

PREAI

Song, D. Y.; Holtz, M.; Chandolu, A.; Nikishin, S. A.; Mokhov, E. N.; Makarov, Yu.; Helava, H.

Short-period superlattices of AlN/Al0.08Ga0.92N grown on AlN substrates

APPLIED PHYSICS LETTERS

IF3.6

2004-11-08

OAAI

Nikishin, SA; Borisov, BA; Chandolu, A; Kuryatkov, VV; Temkin, H; Holtz, M; Mokhov, EN; Makarov, Y; Helava, H

Advanced model for the simulation of BST-film growth with MOCVD

SYNTHETIC METALS

IF4.6

2003-06-01

PREAI

Vorob'ev, AN; Archakov, IY; Bord, OV; Smirnov, SA; Karpov, SY; Makarov, YN; Reinhold, M; Schumacher, M; Heuken, M

Prediction of bulk defects in CZ Si crystals using 3D unsteady calculations of melt convection

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2002-08-01

PREAI

Kalaev, VV; Lukanin, DP; Zabelin, VA; Makarov, YN; Virbulis, J; Dornberger, E; von Ammon, W

Numerical study of SiCCVD in a vertical cold-wall reactor

COMPUTATIONAL MATERIALS SCIENCE

IF3.3

2002-07-01

PREAI

Vorob'ev, AN; Karpov, SY; Bogdanov, MV; Komissarov, AE; Bord, OV; Zhmakin, AI; Makarov, YN

研究方向