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S

Scott B. Clendenning

Intel Corporation
H指数:24
被引数:1,923

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Extreme Ultraviolet and Beyond Extreme Ultraviolet Lithography Using Amorphous Zeolitic Imidazolate Resists Deposited by Atomic/Molecular Layer Deposition

采用原子层/分子层沉积法制备的玻璃态沸石咪唑酯类抗蚀剂在极紫外及超极紫外光刻中的应用

Chemistry of Materials
IF7
2025-10-300
PRE
Kayley E. Waltz; Xinpei Zhou; Xavier Krull; Somya Singh; Eric Mattson; Yurun Miao; Matt Hettermann; Travis Grodt; Qi Zhang; Honggu Im; Bernhard Lüttgenau; Lauren Doyle; Andrea Kraetz; Max Beutner; Scott B. Clendenning; D. Howard Fairbrother; Joseph T. Hupp; Patrick Naulleau; Lawrence Rooney; Oleg Kostko; Michael Tsapatsis
Magnetization switching and detection by PtxSn1-x alloys

PtₓSn₁₋ₓ合金的磁化翻转与检测

APPLIED PHYSICS REVIEWS
IF11.6
2025-05-210
PRE
Mahendra, D. C.; Sakuma, Keita; Santosh, K. C.; Debashis, Punyashloka; Gay, Christopher; Lux, Jennifer; Rogan, Carly; Wilson, Tyrone; Toku, Raphael; Adams, Dominique; Xue, Fen; Plombon, John J.; Kevek, Joshua; Tronic, Tristan A.; Clendenning, Scott B.; Radosavljevic, Marko; Miura, Masashi; Wang, Shan X.; Young, Ian A.
Unconventional spin-to-charge conversion in MnPd3
APPLIED PHYSICS LETTERS
IF3.6
2025-03-010
PRE
Mahendra, D. C.; Debashis, Punyashloka; Gay, Christopher; Lux, Jennifer; Zhang, Yu; Adams, Dominique; Xue, Fen; Rogan, Carly; Wilson, Tyrone; Toku, Raphael; Kevek, Joshua; Tronic, Tristan A.; Clendenning, Scott B.; Oni, Adedapo A.; Radosavljevic, Marko; Wang, Shan X.; Young, Ian A.
Ultra-High-k Ferroelectric BaTiO3 Perovskite in the Gate Stack for Two-Dimensional WSe2 p-Type High-Performance Transistors

用于二维WSe2 p型高性能晶体管的栅叠层中的超高k铁电BaTiO3钙钛矿

NANO LETTERS
IF9.1
2024-10-010
PRE
Debashis, Punyashloka; Ryu, Hojoon; Steinhardt, Rachel; Buragohain, Pratyush; Plombon, John J.; Maxey, Kirby; O'Brien, Kevin P.; Kim, Raseong; Sen Gupta, Arnab; Rogan, Carly; Lux, Jennifer; Tung, I-Cheng; Adams, Dominique; Gulseren, Melisa; Penumatcha, Ashish Verma; Shivaraman, Shriram; Li, Hai; Zhong, Ting; Harlson, Shane; Tronic, Tristan; Oni, Adedapo; Putna, Steve; Clendenning, Scott B.; Metz, Matthew; Radosavljevic, Marko; Avci, Uygar; Young, Ian A.
Process integration and future outlook of 2D transistors

2D晶体管的工艺集成和未来展望

NATURE COMMUNICATIONS
IF15.7
2023-10-1228
OAAI
O'Brien, Kevin P.; Naylor, Carl H.; Dorow, Chelsey; Maxey, Kirby; Penumatcha, Ashish Verma; Vyatskikh, Andrey; Zhong, Ting; Kitamura, Ande; Lee, Sudarat; Rogan, Carly; Mortelmans, Wouter; Kavrik, Mahmut Sami; Steinhardt, Rachel; Buragohain, Pratyush; Dutta, Sourav; Tronic, Tristan; Clendenning, Scott; Fischer, Paul; Putna, Ernisse S.; Radosavljevic, Marko; Metz, Matt; Avci, Uygar
Atomic Layer Deposition of Sb2Te3/GeTe Superlattice Film and Its Melt-Quenching-Free Phase-Transition Mechanism for Phase-Change Memory

Sb2Te3/GeTe超晶格薄膜的原子层沉积及其用于相变存储器的无熔淬相变机制

ADVANCED MATERIALS
IF26.8
2022-11-0314
PRE
Yoo, Chanyoung; Jeon, Jeong Woo; Yoon, Seungjae; Cheng, Yan; Han, Gyuseung; Choi, Wonho; Park, Byongwoo; Jeon, Gwangsik; Jeon, Sangmin; Kim, Woohyun; Zheng, Yonghui; Lee, Jongho; Ahn, Junku; Cho, Sunglae; Clendenning, Scott B.; Karpov, Ilya, V; Lee, Yoon Kyung; Choi, Jung-Hae; Hwang, Cheol Seong
Rhodium-catalyzed dehydrocoupling of fluorinated phosphine-borane adducts: Synthesis, characterization, and properties of cyclic and polymeric phosphinoboranes with electron-withdrawing substituents at phosphorus

铑催化的氟化膦-硼烷加合物的脱氢偶联: 在磷上具有吸电子取代基的环状和聚合膦基硼烷的合成，表征和性质

CHEMISTRY-A EUROPEAN JOURNAL
IF3.7
2005-07-0698
PREAI
Clark, TL; Rodezno, JM; Clendenning, SB; Aouba, S; Brodersen, PM; Lough, AJ; Ruda, HE; Manners, I

研究方向

暂未获取到该数据
I
Ian Manners
H 指数:115论文数:1,406被引数:5.8万
J
John F. Nixon
H 指数:46论文数:774被引数:1.1万
芦
芦政
H 指数:83论文数:636被引数:3.4万
H
Harry E. Ruda
H 指数:40论文数:352被引数:6,576
C
Christopher M. Yip
H 指数:52论文数:269被引数:9,246
T
Tristan A. Tronic
H 指数:18论文数:95被引数:2,910
S
S. Aouba
H 指数:9论文数:28被引数:628
C
Carly Rogan
H 指数:9论文数:23被引数:421
M
M. Radosavljević
H 指数:37论文数:125被引数:5,301
I
Ian A. Young
H 指数:44论文数:282被引数:8,698