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Seul Ji Song

seoul national university (snu)

H指数:30

被引数:3,040

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Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(NtBu)(NEt2)3, Ta(NtBu)(NEt2)2Cp, and H2O

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2016-12-2019

PREAI

Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2-x Structure with a Sub μm2 Cell Area

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2016-07-0739

PREAI

Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors

SCIENTIFIC REPORTS

IF3.9

2016-02-1154

OAAI

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

IF5.1

2016-01-0123

PREAI

Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

SCIENTIFIC REPORTS

IF3.9

2015-11-0359

OAAI

Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

ADVANCED MATERIALS

IF26.8

2015-05-13154

PREAI

The impact of orbital hybridization on the electronic structure of crystalline InGaZnO: a new perspective on the compositional dependence

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2014-09-1225

PREAI

Resistance switching in epitaxial SrCoOx thin films

APPLIED PHYSICS LETTERS

IF3.6

2014-08-1448

PREAI

A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

从集成和材料特性的角度回顾了三维电阻开关交叉阵列存储器

ADVANCED FUNCTIONAL MATERIALS

IF19

2014-07-03338

PREAI

Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure

ADVANCED FUNCTIONAL MATERIALS

IF19

2014-05-26218

PREAI

Nanoscale Characterization of TiO2 Films Grown by Atomic Layer Deposition on RuO2 Electrodes

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2014-02-1024

OAAI

X-ray Irradiation Induced Reversible Resistance Change in Pt/TiO2/Pt Cells

IF16

2014-01-2135

OA

Evolution of the shape of the conducting channel in complementary resistive switching transition metal oxides

IF5.1

2014-01-0136

PREAI

Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM

SCIENTIFIC REPORTS

IF3.9

2013-12-0686

OAAI

Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials

COORDINATION CHEMISTRY REVIEWS

IF23.5

2013-12-0150

PREAI

Highly Improved Uniformity in the Resistive Switching Parameters of TiO2 Thin Films by Inserting Ru Nanodots

通过插入Ru纳米点可大大改善TiO2薄膜的电阻开关参数的均匀性

ADVANCED MATERIALS

IF26.8

2013-02-06179

PREAI

Spectroscopic investigation of the hole states in Ni-deficient NiO films

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2013-01-0151

PREAI

Substrate Dependent Growth Behaviors of Plasma-Enhanced Atomic Layer Deposited Nickel Oxide Films for Resistive Switching Application

用于电阻开关应用的等离子体增强原子层沉积氧化镍薄膜的衬底依赖性生长行为

CHEMISTRY OF MATERIALS

IF7

2012-12-0641

PREAI

32 x 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory

由堆叠肖特基二极管和单极电阻存储器组成的32x32交叉阵列电阻存储器

ADVANCED FUNCTIONAL MATERIALS

IF19

2012-10-18169

PREAI

Optimization of Chemical Structure of Schottky-Type Selection Diode for Crossbar Resistive Memory

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2012-10-0311

PREAI