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J

J. Keinonen

university of helsinki

53H指数
412论文数
1.2W被引数
收录论文 52
发表时间
Non-invasive transmission electron microscopy of vacancy defects in graphene produced by ion irradiation
err2014-01-01
err52
errOAAI
errLehtinen, Ossi; Tsai, I-Ling; Jalil, Rashid; Nair, Rahul R.; Keinonen, Juhani; Kaiser, Ute; Grigorieva, Irina V.
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Dual origin of defect magnetism in graphene and its reversible switching by molecular doping
err2013-06-12
err222
errOAAI
errNair, R. R.; Tsai, I-L; Sepioni, M.; Lehtinen, O.; Keinonen, J.; Krasheninnikov, A. V.; Castro Neto, A. H.; Katsnelson, M. I.; Geim, A. K.; Grigorieva, I. V.
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Spin-half paramagnetism in graphene induced by point defects
err2012-01-10
err777
errOAAI
errNair, R. R.; Sepioni, M.; Tsai, I-Ling; Lehtinen, O.; Keinonen, J.; Krasheninnikov, A. V.; Thomson, T.; Geim, A. K.; Grigorieva, I. V.
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Hydrogen interaction with point defects in tungsten
err2010-09-10
err247
PREAI
errHeinola, K.; Ahlgren, T.; Nordlund, K.; Keinonen, J.
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Effects of ion bombardment on a two-dimensional target: Atomistic simulations of graphene irradiation
err2010-04-01
err367
PREAI
errLehtinen, O.; Kotakoski, J.; Krasheninnikov, A. V.; Tolvanen, A.; Nordlund, K.; Keinonen, J.
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Annihilation of craters: Molecular dynamic simulations on a silver surface
err2007-12-21
err4
PREAI
errHenriksson, K. O. E.; Nordlund, K.; Keinonen, J.
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Solid phase epitaxy of Na-ion irradiated α-quartz:: Cathodoluminescence, kinetics and surface morphology
err2006-08-01
err4
PREAI
errGasiorek, S.; Sahoo, P. K.; Lieb, K. P.; Dhar, S.; Sajavaara, T.; Keinonen, J.
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Light-emitting defects and epitaxy in alkali-ion-implanted α quartz
err2006-06-27
err12
PREAI
errKeinonen, J.; Gasiorek, S.; Sahoo, P. K.; Dhar, S.; Lieb, K. P.
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Ultrafast dynamics of Ni+-irradiated and annealed GaInAs/InP multiple quantum wells
err2006-06-16
err7
PREAI
errDhaka, VDS; Tkachenko, NV; Lemmetyinen, H; Pavelescu, EM; Suomalainen, S; Pessa, M; Arstila, K; Nordlund, K; Keinonen, J
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Difference in formation of hydrogen and helium clusters in tungsten
err2005-10-12
err157
PREAI
errHenriksson, KOE; Nordlund, K; Krasheninnikov, A; Keinonen, J
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Analysis of ALD-processed thin films by ion-beam techniques
err2005-07-14
err66
PREAI
errPutkonen, M; Sajavaara, T; Niinistö, L; Keinonen, J
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Achieving epitaxy and intense luminescence in Ge/Rb-implanted α-quartz -: art. no. 021105
err2005-07-06
err14
PREAI
errSahoo, PK; Gasiorek, S; Lieb, KP; Arstila, K; Keinonen, J
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Optical properties of ion irradiated and annealed InGaAs/GaAs quantum wells and semiconductor saturable absorber mirrors
err2005-03-18
err12
PREAI
errHakkarainen, T; Pavelescu, EM; Arstila, K; Dhaka, VDS; Hakulinen, T; Herda, R; Konttinen, J; Tkachenko, N; Lemmetyinen, H; Keinonen, J; Pessa, M
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Atomic layer deposition of molybdenum nitride thin films for Cu metallizations
err2005-01-01
err105
PREAI
errAlén, P; Ritala, M; Arstila, K; Keinonen, J; Leskelä, M
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Properties of oxide film atomic layer deposited from tetraethoxy silane, hafnium halides, and water
err2004-01-01
err32
errOAAI
errKukli, K; Ritala, M; Leskelä, M; Sajavaara, T; Keinonen, J; Hegde, RI; Gilmer, DC; Tobin, PJ
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ALD of Ta(Si)N thin films using TDMAS as a reducing agent and as a Si precursor
err2004-01-01
err22
PREAI
errAlén, P; Aaltonen, T; Ritala, M; Leskelä, M; Sajavaara, T; Keinonen, J; Hooker, JC; Maes, JW
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