Hyunsang Hwang - Publications, H-index & Citations

Hyunsang Hwang

机构信息待补充

34H指数

165论文数

3.5K被引数

收录论文 30

发表时间

In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interface

NANOSCALE

IF5.1

2017-01-01

PREAI

Baek, Kyungjoon; Park, Sangsu; Park, Jucheol; Kim, Young-Min; Hwang, Hyunsang; Oh, Sang Ho

Trade-off between number of conductance states and variability of conductance change in Pr0.7Ca0.3MnO3-based synapse device

APPLIED PHYSICS LETTERS

IF3.6

2015-03-20

OAAI

Lee, Daeseok; Moon, Kibong; Park, Jaesung; Park, Sangsu; Hwang, Hyunsang

Electrical characteristics of wrinkle-free graphene formed by laser graphitization of 4H-SiC

APPLIED PHYSICS LETTERS

IF3.6

2011-08-22

PREAI

Hwang, Hyeon Jun; Cho, Chunhum; Lim, Sung Kwan; Lee, Seung Yong; Kang, Chang Goo; Hwang, Hyunsang; Lee, Byoung Hun

Nonlinear current-voltage behavior of the isolated resistive switching filamentary channels in CuC nanolayer

APPLIED PHYSICS LETTERS

IF3.6

2011-04-14

PREAI

Kim, Doo-In; Yoon, Jaesik; Park, Ju-Bong; Hwang, Hyunsang; Kim, Young Moon; Kwon, Se Hun; Kim, Kwang Ho

Asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2010-11-25

OAAI

Biju, Kuyyadi P.; Liu, XinJun; Bourim, El Mostafa; Kim, Insung; Jung, Seungjae; Siddik, Manzar; Lee, Joonmyoung; Hwang, Hyunsang

Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications

APPLIED PHYSICS LETTERS

IF3.6

2010-10-25

134

OAAI

Lee, Joonmyoung; Bourim, El Mostafa; Lee, Wootae; Park, Jubong; Jo, Minseok; Jung, Seungjae; Shin, Jungho; Hwang, Hyunsang

Three-Dimensional Integration of Organic Resistive Memory Devices

ADVANCED MATERIALS

IF26.8

2010-09-13

222

PREAI

Song, Sunghoon; Cho, Byungjin; Kim, Tae-Wook; Ji, Yongsung; Jo, Minseok; Wang, Gunuk; Choe, Minhyeok; Kahng, Yung Ho; Hwang, Hyunsang; Lee, Takhee

Characterization of fast charge trapping in bias temperature instability in metal-oxide-semiconductor field effect transistor with high dielectric constant

APPLIED PHYSICS LETTERS

IF3.6

2010-04-07

PREAI

Jo, Minseok; Kim, Seonghyun; Lee, Joonmyoung; Jung, Seungjae; Park, Ju-Bong; Jung, Hyung-Suk; Choi, Rino; Hwang, Hyunsang

One Transistor-One Resistor Devices for Polymer Non-Volatile Memory Applications

ADVANCED MATERIALS

IF26.8

2009-06-18

102

PREAI

Kim, Tae-Wook; Choi, Hyejung; Oh, Seung-Hwan; Wang, Gunuk; Kim, Dong-Yu; Hwang, Hyunsang; Lee, Takhee

Gate voltage dependence on hot carrier degradation at an elevated temperature in a device with ultrathin silicon oxynitride

APPLIED PHYSICS LETTERS

IF3.6

2009-02-03

PREAI

Jo, Minseok; Kim, Seonghyun; Cho, Chunhum; Chang, Man; Hwang, Hyunsang

Dependence of the Metal Electrode and Improved Pulse Switching Speed of La0.7Ca0.3MnO3 as a Resistance Change Memory Device

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2009-01-01

PREAI

Hasan, Musarrat; Dong, Rui; Choi, Hyejung; Yoon, Jaesik; Park, Ju-bong; Seong, Dong-joon; Hwang, Hyunsang

Electrical and reliability characteristics of copper-doped carbon (CuC) based resistive switching devices for nonvolatile memory applications

APPLIED PHYSICS LETTERS

IF3.6

2008-11-26

PREAI

Pyun, Myeongbum; Choi, Hyejung; Park, Ju-Bong; Lee, Dongsoo; Hasan, Musarrat; Dong, Rui; Jung, Seung-Jae; Lee, Joonmyoung; Seong, Dong-jun; Yoon, Jaesik; Hwang, Hyunsang

The effect of KrF laser annealing within an ultrashort time on metal-alumina-nitride-oxide-silicon-type flash memory devices 超短时间内KrF激光退火对金属-氧化铝-氮化物-氧化物-硅型闪存器件的影响

APPLIED PHYSICS LETTERS

IF3.6

2008-10-31

PREAI

Heo, Sungho; Chang, Man; Ju, Yongkyu; Jung, Seungjae; Hwang, Hyunsang

Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices

APPLIED PHYSICS LETTERS

IF3.6

2008-06-27

PREAI

Kim, Tae-Wook; Oh, Seung-Hwan; Choi, Hyejung; Wang, Gunuk; Hwang, Hyunsang; Kim, Dong-Yu; Lee, Takhee

Impact of high-pressure deuterium oxide annealing on the blocking efficiency and interface quality of metal-alumina-nitride-oxide-silicon-type flash memory devices

APPLIED PHYSICS LETTERS

IF3.6

2007-11-09

PREAI

Chang, Man; Hasan, Musarrat; Jung, Seungjae; Park, Hokyung; Jo, Minseok; Choi, Hyejung; Hwang, Hyunsang

Improved thermal stability of ruthenium oxide metal gate electrode on hafnium oxide gate dielectric

APPLIED PHYSICS LETTERS

IF3.6

2007-07-20

OAAI

Hasan, Musarrat; Park, Hokyung; Lee, Joon-myong; Hwang, Hyunsang

Improvement of reproducible hysteresis and resistive switching in metal-La0.7Ca0.3MnO3-metal heterostructures by oxygen annealing

APPLIED PHYSICS LETTERS

IF3.6

2007-05-04

PREAI

Dong, R.; Xiang, W. F.; Lee, D. S.; Oh, S. J.; Seong, D. J.; Heo, S. H.; Choi, H. J.; Kwon, M. J.; Chang, M.; Jo, M.; Hasan, M.; Hwang, Hyunsang

Ultralow work function of scandium metal gate with tantalum nitride interface layer for n-channel metal oxide semiconductor application

APPLIED PHYSICS LETTERS

IF3.6

2007-03-07

PREAI

Hasan, Musarrat; Park, Hokyung; Yang, Hyundoek; Hwang, Hyunsang; Jung, Hyung-Suk; Lee, Jong-Ho

Heteroepitaxial growth of Nb-doped SrTiO3 films on Si substrates by pulsed laser deposition for resistance memory applications

APPLIED PHYSICS LETTERS

IF3.6

2007-02-01

PREAI

Xiang, Wenfeng; Dong, Rui; Lee, Dongsoo; Oh, Seokjoon; Seong, Dongjun; Hwang, Hyunsang

Reproducible hysteresis and resistive switching in metal-CuxO-metal heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2007-01-25

177

PREAI

Dong, R.; Lee, D. S.; Xiang, W. F.; Oh, S. J.; Seong, D. J.; Heo, S. H.; Choi, H. J.; Kwon, M. J.; Seo, S. N.; Pyun, M. B.; Hasan, M.; Hwang, Hyunsang

研究方向