Tae-Yeon Seong

center for physical sciences & technology - lithuania

H指数:59

被引数:1.3万

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Degradation mechanisms and stability engineering in organic redox flow batteries: From molecular design to system-level control

有机氧化还原液流电池中的降解机制与稳定性工程：从分子设计到系统级控制

Journal of Power Sources

IF7.9

2026-08-220

PRE

Ultrasensitive ppb-level nitric oxide detection enabled by ZnO thin films on tungsten nanostructured templates

基于钨纳米结构模板的ZnO薄膜实现ppb级一氧化氮超灵敏检测

Sensors and Actuators B-Chemical

IF7.7

2026-08-200

PRE

Anion-Cation Synergistic Passivation for High-Performance FA-Cs Halide Perovskite Photodetectors

阴离子-阳离子协同钝化用于高性能FA-Cs卤化物钙钛矿光电探测器

Advanced Electronic Materials

IF5.3

2026-08-110

OAAI

Micro-LED/CMOS Integration Technologies for High-Resolution AR Microdisplays: Scaling Limits, Yield, and Reliability

微LED/CMOS集成技术用于高分辨率AR微显示器：扩展限制、良率和可靠性

Laser & Photonics Reviews

IF10

2026-07-300

PRE

Advancements in N-polar GaN-based high electron mobility transistors: Device design, material engineering, and performance enhancement strategies

N极性GaN基高电子迁移率晶体管的进展：器件设计、材料工程及性能提升策略

Progress in Quantum Electronics

IF12.5

2026-06-100

PRE

Electrical performance of n-β-Ga2O3/p-GaN heterojunction diodes

n-β-Ga2O3/p-GaN异质结二极管的电性能

Materials Today Electronics

IF7.4

2026-06-011

OAAI

Current Status of Micro-Display Technology Based on Micro-Light-Emitting Diodes

基于微发光二极管的微显示技术现状

Progress in Quantum Electronics

IF12.5

2026-04-180

PRE

Influence of pixel size and gap on the optoelectronic performance of micro-LED arrays for visible light communication using boron ion implantation

硼离子注入对可见光通信用微LED阵列的光电性能中像素尺寸和间隙的影响

Discover Nano

IF4.5

2025-10-140

Bandwidth enhancement in SWIR QD photodetectors via interfacial trap suppression using polymer capping layers

通过聚合物包覆层抑制界面陷阱实现短波红外量子点光电探测器的带宽增强

Materials & Design

IF7.9

2025-06-280

Advancements in ohmic contact technology for AlGaN/GaN high-electron-mobility transistors

AlGaN/GaN高电子迁移率晶体管欧姆接触技术的进展

Progress in Quantum Electronics

IF12.5

2025-06-100

PRE

InGaN-based blue and red micro-LEDs: Impact of carrier localization

APPLIED PHYSICS REVIEWS

IF11.6

2024-12-240

PRE

Dual-Electrolyte Neuromorphic Transistor for Risk Detection and Image Processing

用于风险检测和图像处理的双电解质神经形态晶体管

ADVANCED MATERIALS TECHNOLOGIES

IF6.2

2024-11-300

PRE

Artificial Multimodal Neuron with Associative Learning Capabilities: Acquisition, Extinction, and Spontaneous Recovery

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2024-07-011

PRE

Recent advances in micro-pixel light emitting diode technology

微像素发光二极管技术的最新进展

APPLIED PHYSICS REVIEWS

IF11.6

2024-05-167

Extrinsic hydrophobicity-controlled silver nanoparticles as efficient and stable catalysts for CO2 electrolysis

外在疏水性控制的银纳米颗粒作为CO2电解的高效稳定催化剂

NATURE COMMUNICATIONS

IF15.7

2024-04-188

OAAI

Fabrication of [001]-Oriented FAPbI3-Based Photodetector With Excellent Air Stability Via Green Anti-Solvent Additive Engineering

通过绿色抗溶剂添加剂工程制造具有优异空气稳定性的 [001] 取向FAPbI3-Based光电探测器

ADVANCED OPTICAL MATERIALS

IF7.2

2024-02-210

PRE

Realization of High Mobility Synaptic Transistor through Control of Cross-Linking Agent in a Polymer Dielectric Layer for Emerging Electric Double Layer

通过控制新兴双电层的聚合物介电层中的交联剂实现高迁移率突触晶体管

ADVANCED MATERIALS TECHNOLOGIES

IF6.2

2024-01-173

PRE

High Performance Hybrid-Phototransistor Based on ZnON/perovskite Heterostructure Through Multi-Functional Passivation

基于ZnON/钙钛矿异质结构的多功能钝化高性能杂化光电晶体管

ADVANCED FUNCTIONAL MATERIALS

IF19

2023-12-211

PRE

Realization of High-Performance Photoresponsivity of Sb2Se3-Based Phototransistors by Using Hybrid Structure and Optimizing Annealing Temperature

通过使用混合结构和优化退火温度实现Sb2Se3-Based光电晶体管的高性能光响应

ADVANCED MATERIALS TECHNOLOGIES

IF6.2

2023-11-211

PRE

Dislocation Suppresses Sidewall-Surface Recombination of Micro-LEDs

LASER & PHOTONICS REVIEWS

IF10

2023-06-0512

PRE

Tae-Yeon Seong

个人简介

教育背景

工作经历

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