I. Adesida - Publications, H-index & Citations

I. Adesida

a*star - data storage institute

59H指数

549论文数

1.2W被引数

收录论文 46

发表时间

Parasitic capacitance effect on programming performance of phase change random access memory devices

APPLIED PHYSICS LETTERS

IF3.6

2010-01-29

PREAI

Yeo, E. G.; Shi, L. P.; Zhao, R.; Lim, K. G.; Chong, T. C.; Adesida, I.

Direct contact mechanism of Ohmic metallization to AlGaN/GaN heterostructures via Ohmic area recess etching

APPLIED PHYSICS LETTERS

IF3.6

2009-10-29

PREAI

Wang, Liang; Kim, Dong-Hyun; Adesida, Ilesanmi

Transient phase change effect during the crystallization process in phase change memory devices

APPLIED PHYSICS LETTERS

IF3.6

2009-06-17

PREAI

Yeo, E. G.; Zhao, R.; Shi, L. P.; Lim, K. G.; Chong, T. C.; Adesida, I.

Transport measurements and analytical modeling of extraordinary electrical conductance in Ti-GaAs metal-semiconductor hybrid structures

PHYSICAL REVIEW B

IF3.7

2009-05-05

PREAI

Newaz, A. K. M.; Wang, Yun; Wu, Jian; Solin, S. A.; Kavasseri, V. R.; Ahmad, I. S.; Adesida, I.

Sub-Poissonian shot noise of a high internal gain injection photon detector

OPTICS EXPRESS

IF3.3

2008-08-07

OAAI

Memis, Omer Gokalp; Katsnelson, Alex; Kong, Soon-Cheol; Mohseni, Hooman; Yan, Minjun; Zhang, Shuang; Hossain, Tim; Jin, Niu; Adesida, Ilesanmi

Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistors

APPLIED PHYSICS LETTERS

IF3.6

2008-07-23

PREAI

Wang, Liang; Adesida, Ilesanmi; Dabiran, Amir M.; Wowchak, Andrew M.; Chow, Peter P.

Deep level characteristics in n-GaN with inductively coupled plasma damage

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2008-07-18

PREAI

Cho, H. K.; Khan, F. A.; Adesida, I.; Fang, Z-Q; Look, D. C.

Extraordinary electroconductance in metal-semiconductor hybrid structures

APPLIED PHYSICS LETTERS

IF3.6

2008-07-02

OAAI

Wang, Yun; Newaz, A. K. M.; Wu, Jian; Solin, S. A.; Kavasseri, V. R.; Jin, N.; Ahmed, I. S.; Adesida, I.

A photon detector with very high gain at low bias and at room temperature

APPLIED PHYSICS LETTERS

IF3.6

2007-10-25

PREAI

Memis, Omer Gokalp; Katsnelson, Alex; Kong, Soon-Cheol; Mohseni, Hooman; Yan, Minjun; Zhang, Shuang; Hossain, Tim; Jin, Niu; Adesida, Ilesanmi

Schottky barrier characteristics and interfacial reactions of Ti on n-In0.52Al0.48As

APPLIED PHYSICS LETTERS

IF3.6

2007-07-11

PREAI

Wang, Liang; Adesida, Ilesanmi

Ohmic contacts to n+-GaN capped AlGaN/AlN/GaN high electron mobility transistors

APPLIED PHYSICS LETTERS

IF3.6

2007-07-06

OAAI

Wang, Liang; Mohammed, Fitih M.; Ofuonye, Benedict; Adesida, Ilesanmi

Comparative studies on low-resistance Pd-based ohmic contacts on p-GaAsSb

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2007-01-01

PREAI

Jang, J. H.; Cho, H. K.; Bae, J. W.; Adesida, I.; Pan, N.

Correlating the Schottky barrier height with the interfacial reactions of Ir gates for InAlAs/InGaAs high electron mobility transistors

APPLIED PHYSICS LETTERS

IF3.6

2006-11-22

PREAI

Wang, Liang; Zhao, Weifeng; Adesida, Ilesanmi

Buckled and wavy ribbons of GaAs for high-performance electronics on elastomeric substrates

ADVANCED MATERIALS

IF26.8

2006-10-10

177

OAAI

Sun, Yugang; Kumar, Vipan; Adesida, Ilesanmi; Rogers, John A.

Printed arrays of aligned GaAs wires for flexible transistors, diodes, and circuits on plastic substrates

SMALL

IF12.1

2006-10-02

PREAI

Sun, Yugang; Kim, Hoon-Sik; Menard, Etienne; Kim, Seiyon; Adesida, Ilesanmi; Rogers, John A.

Electrical and structural investigations of Ag-based Ohmic contacts for InAlAs/InGaAs/InP high electron mobility transistors

APPLIED PHYSICS LETTERS

IF3.6

2006-08-16

PREAI

Zhao, Weifeng; Wang, Liang; Adesida, Ilesanmi

Ultralow resistance Si-containing Ti/Al/Mo/Au Ohmic contacts with large processing window for AlGaN/GaN heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2006-05-25

PREAI

Mohammed, Fitih M.; Wang, Liang; Adesida, Ilesanmi

Gigahertz operation in flexible transistors on plastic substrates

APPLIED PHYSICS LETTERS

IF3.6

2006-05-05

PREAI

Sun, YG; Menard, E; Rogers, JA; Kim, HS; Kim, S; Chen, G; Adesida, I; Dettmer, R; Cortez, R; Tewksbury, A

Noninterfacial-nitride formation ohmic contact mechanism in Si-containing Ti/Al/Mo/Au metallizations on AlGaN/GaN heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2005-12-23

PREAI

Mohammed, FM; Wang, L; Adesida, I

Traps in AlGaN/GaN/SiC heterostructures studied by deep level transient spectroscopy

APPLIED PHYSICS LETTERS

IF3.6

2005-10-28

117

PREAI

Fang, ZQ; Look, DC; Kim, DH; Adesida, I

研究方向