Parasitic capacitance effect on programming performance of phase change random access memory devicesAPPLIED PHYSICS LETTERSIF3.62010-01-2910PREAI
Direct contact mechanism of Ohmic metallization to AlGaN/GaN heterostructures via Ohmic area recess etchingAPPLIED PHYSICS LETTERSIF3.62009-10-2946PREAI
Transient phase change effect during the crystallization process in phase change memory devicesAPPLIED PHYSICS LETTERSIF3.62009-06-177PREAI
Transport measurements and analytical modeling of extraordinary electrical conductance in Ti-GaAs metal-semiconductor hybrid structuresPHYSICAL REVIEW BIF3.72009-05-0511PREAI
Sub-Poissonian shot noise of a high internal gain injection photon detectorOPTICS EXPRESSIF3.32008-08-0744OA
Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistorsAPPLIED PHYSICS LETTERSIF3.62008-07-2325PREAI
Deep level characteristics in n-GaN with inductively coupled plasma damageJOURNAL OF PHYSICS D-APPLIED PHYSICSIF3.22008-07-1860PREAI
Extraordinary electroconductance in metal-semiconductor hybrid structuresAPPLIED PHYSICS LETTERSIF3.62008-07-0215OAAI
A photon detector with very high gain at low bias and at room temperatureAPPLIED PHYSICS LETTERSIF3.62007-10-2545PREAI
Schottky barrier characteristics and interfacial reactions of Ti on n-In0.52Al0.48AsAPPLIED PHYSICS LETTERSIF3.62007-07-113PREAI
Ohmic contacts to n+-GaN capped AlGaN/AlN/GaN high electron mobility transistorsAPPLIED PHYSICS LETTERSIF3.62007-07-0617OA
Comparative studies on low-resistance Pd-based ohmic contacts on p-GaAsSbJOURNAL OF THE ELECTROCHEMICAL SOCIETYIF3.32007-01-015PREAI
Correlating the Schottky barrier height with the interfacial reactions of Ir gates for InAlAs/InGaAs high electron mobility transistorsAPPLIED PHYSICS LETTERSIF3.62006-11-2213PREAI
Buckled and wavy ribbons of GaAs for high-performance electronics on elastomeric substratesADVANCED MATERIALSIF26.82006-10-10177OAAI
Printed arrays of aligned GaAs wires for flexible transistors, diodes, and circuits on plastic substratesSMALLIF12.12006-10-0289PREAI
Electrical and structural investigations of Ag-based Ohmic contacts for InAlAs/InGaAs/InP high electron mobility transistorsAPPLIED PHYSICS LETTERSIF3.62006-08-169PREAI
Ultralow resistance Si-containing Ti/Al/Mo/Au Ohmic contacts with large processing window for AlGaN/GaN heterostructuresAPPLIED PHYSICS LETTERSIF3.62006-05-2534PREAI
Gigahertz operation in flexible transistors on plastic substratesAPPLIED PHYSICS LETTERSIF3.62006-05-0586PREAI
Noninterfacial-nitride formation ohmic contact mechanism in Si-containing Ti/Al/Mo/Au metallizations on AlGaN/GaN heterostructuresAPPLIED PHYSICS LETTERSIF3.62005-12-2315PREAI
Traps in AlGaN/GaN/SiC heterostructures studied by deep level transient spectroscopyAPPLIED PHYSICS LETTERSIF3.62005-10-28117PREAI
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