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A. N. Broers

机构信息待补充

29H指数
130论文数
2.9K被引数
收录论文 2
发表时间
Fabrication of SiGe quantum devices by electron-beam induced damage电子束诱导损伤制备SiGe量子器件
err1997-01-01
err3
PREAI
errRyan, JM; Broers, AN; Paul, DJ; Pepper, M; Whall, TE; Fernandez, JM; Joyce, BA
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LIMITS OF NANO-GATE FABRICATION
err1991-01-01
err14
PREAI
errALLEE, DR; BROERS, AN; PEASE, RFW
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