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Simon M. Sze

National Yang Ming Chiao Tung University

H指数:55

被引数:1.4万

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Utilizing high pressure hydrogen annealing to realize forming free CBRAM

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2023-10-011

PRE

Abnormal Threshold Voltage Shift and Sub-channel Generation in Top-Gate InGaZnO TFTs under Backlight Negative Bias Illumination Stress

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-01-242

PRE

A Stacked p-Type Low-Temperature Polycrystalline Silicon Thin-Film Transistor for Future Display Applications

ADVANCED MATERIALS TECHNOLOGIES

IF6.2

2022-07-071

PRE

Investigation of deposition technique and thickness effect of HfO2 film in bilayer InWZnO-based conductive bridge random access memory

双层InWZnO基导电桥随机存储器中HfO2薄膜的沉积工艺及厚度效应研究

IF3.9

2022-07-015

PRE

Radiation hardness of InWZno thin film as resistive switching layer

InWZno薄膜作为电阻开关层的辐射硬度

APPLIED PHYSICS LETTERS

IF3.6

2022-05-125

PRE

Investigating Selectorless Property within Niobium Devices for Storage Applications

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2022-01-0318

PRE

Heterogeneous metal oxide channel structure for ultra-high sensitivity phototransistor with modulated operating conditions

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2022-01-0110

PRE

Improvement on thermal stability for indium gallium zinc oxide by oxygen vacancy passivation with supercritical fluid cosolvent oxidation

超临界流体共溶剂氧化氧空位钝化改善铟镓锌氧化物的热稳定性

APPLIED PHYSICS LETTERS

IF3.6

2021-12-075

PRE

Improvement Mechanism of resistance random access memory with supercritical CO2 fluid treatment (vol 85, pg 183, 2014)

JOURNAL OF SUPERCRITICAL FLUIDS

IF4.4

2021-12-010

PRE

Adjusting oxygen vacancy and resistance switching of InWZnO thin films by high-pressure oxidation technique

通过高压氧化技术调节InWZnO薄膜的氧空位和电阻开关

APPLIED PHYSICS LETTERS

IF3.6

2021-10-262

PRE

Impact of O2 plasma treatment on novel amorphous oxide InWZnO on conductive bridge random access memory

SURFACE & COATINGS TECHNOLOGY

IF6.1

2021-09-016

PRE

Impact of annealing environment on performance of InWZnO conductive bridge random access memory

退火环境对InWZnO导电桥随机存储器性能的影响

IF3.9

2021-09-017

PREAI

Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film

氧浓度对InWZnO薄膜导电桥随机存储器的影响

IF4.3

2021-08-274

OAAI

A high-speed MIM resistive memory cell with an inherent vanadium selector

APPLIED MATERIALS TODAY

IF6.9

2020-12-0116

PREAI

Annealing effects on resistive switching of IGZO-based CBRAM devices

IF3.9

2020-10-0112

PREAI

A comprehensive study of enhanced characteristics with localized transition in interface-type vanadium-based devices

MATERIALS TODAY PHYSICS

IF9.7

2020-06-0111

PREAI

Stabilizing resistive random access memory by constructing an oxygen reservoir with analyzed state distribution

IF5.1

2020-01-014

PREAI

The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatment

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-0671

PREAI

Investigation of the forming process under UV illumination in HfO2-based resistance random access memory with a transparent electrode

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2019-10-252

PREAI

Highly durable and flexible gallium-based oxide conductive-bridging random access memory

SCIENTIFIC REPORTS

IF3.9

2019-10-0243

OAAI