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Simon M. Sze

National Yang Ming Chiao Tung University

55H指数
430论文数
1.5W被引数
收录论文 98
发表时间
Utilizing high pressure hydrogen annealing to realize forming free CBRAM
err2023-10-01
err1
PREAI
errTan, Yung-Fang; Chen, Min-Chen; Yeh, Yu-Hsuan; Wu, Chung-Wei; Tsai, Tsung-Ming; Chang, Ting-Chang; Chou, Sheng-Yao; Huang, Yen-Che; Sze, Simon M.
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Abnormal Threshold Voltage Shift and Sub-channel Generation in Top-Gate InGaZnO TFTs under Backlight Negative Bias Illumination Stress
err2023-01-24
err2
PREAI
errZhou, Kuan-Ju; Chang, Ting -Chang; Tai, Mao-Chou; Chen, Yu -An; Chien, Ya-Ting; Sun, Pei-Jun; Yen, Po -Yu; Sze, Simon M.; Fan, Yang-Shun; Huang, Chen-Shuo; Chen, Kuo-Kuang; Tsai, Chih-Hung
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A Stacked p-Type Low-Temperature Polycrystalline Silicon Thin-Film Transistor for Future Display Applications
err2022-07-07
err1
PREAI
errWang, Yu-Xuan; Tai, Mao-Chou; Chang, Ting-Chang; Wu, Chia-Chuan; Zheng, Yu-Zhe; Tu, Yu-Fa; Zhou, Kuan-Ju; Shih, Yu-Shan; Chen, Yu-An; Huang, Jen-Wei; Sze, Simon
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Radiation hardness of InWZno thin film as resistive switching layerInWZno薄膜作为电阻开关层的辐射硬度
err2022-05-12
err5
PREAI
errHsu, Chih-Chieh; Ruan, Dun-Bao; Liao, Kuei-Shu Chang; Gan, Kai-Jhih; Sze, Simon M.; Liu, Po-Tsun
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Investigating Selectorless Property within Niobium Devices for Storage Applications
err2022-01-03
err18
PREAI
errChen, Po-Hsun; Lin, Chih-Yang; Chang, Ting-Chang; Eshraghian, Jason K.; Chao, Yu-Ting; Lu, Wei D.; Sze, Simon M.
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Heterogeneous metal oxide channel structure for ultra-high sensitivity phototransistor with modulated operating conditions
err2022-01-01
err10
PREAI
errZhou, Kuan-Ju; Chen, Po-Hsun; Zheng, Yu-Zhe; Tai, Mao-Chou; Wang, Yu-Xuan; Chien, Ya-Ting; Sun, Pei-Jun; Huang, Hui-Chun; Chang, Ting-Chang; Sze, Simon M.
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Improvement Mechanism of resistance random access memory with supercritical CO2 fluid treatment (vol 85, pg 183, 2014)
err2021-12-01
err0
PREAI
errChang, Kuan-Chang; Chen, Jung-Hui; Tsai, Tsung-Ming; Chang, Ting-Chang; Huang, Syuan-Yong; Zhang, Rui; Chen, Kai-Huang; Syu, Yong-En; Chang, Geng-Wei; Chu, Tian-Jian; Liu, Guan-Ru; Su, Yu-Ting; Chen, Min-Chen; Pan, Jhih-Hong; Liao, Kuo-Hsiao; Tai, Ya-Hsiang; Young, Tai-Fa; Sze, Simon M.; Ai, Chi-Fong; Wang, Min-Chuan; Huang, Jen-Wei
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Impact of O2 plasma treatment on novel amorphous oxide InWZnO on conductive bridge random access memory
err2021-09-01
err6
PREAI
errHsu, Chih-Chieh; Liu, Po-Tsun; Gan, Kai-Jhih; Ruan, Dun-Bao; Chiu, Yu-Chuan; Sze, Simon M.
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Impact of annealing environment on performance of InWZnO conductive bridge random access memory退火环境对InWZnO导电桥随机存储器性能的影响
errVACUUM
IF3.9
err2021-09-01
err7
PREAI
errHsu, Chih-Chieh; Liu, Po-Tsun; Gan, Kai-Jhih; Ruan, Dun-Bao; Chiu, Yu-Chuan; Sze, Simon M.
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A high-speed MIM resistive memory cell with an inherent vanadium selector
err2020-12-01
err16
PREAI
errLin, Chih-Yang; Tseng, Yi-Ting; Chen, Po-Hsun; Chang, Ting-Chang; Eshraghian, Jason K.; Wang, Qiwen; Lin, Qi; Tan, Yung-Fang; Tai, Mao-Chou; Hung, Wei-Chun; Huang, Hui-Chun; Lu, Wei D.; Sze, Simon M.
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Annealing effects on resistive switching of IGZO-based CBRAM devices
errVACUUM
IF3.9
err2020-10-01
err12
PREAI
errGan, Kai-Jhih; Liu, Po-Tsun; Ruan, Dun-Bao; Chiu, Yu-Chuan; Sze, Simon M.
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A comprehensive study of enhanced characteristics with localized transition in interface-type vanadium-based devices
err2020-06-01
err11
PREAI
errLin, C. -Y.; Chen, P. -H.; Chang, T. -C.; Huang, W. -C.; Tan, Y. -F.; Lin, Y. -H.; Chen, W. -C.; Lin, C. -C.; Chang, Y. -F.; Chen, Y. -C.; Huang, H. -C.; Ma, X. -H.; Hao, Y.; Sze, S. M.
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Stabilizing resistive random access memory by constructing an oxygen reservoir with analyzed state distribution
err2020-01-01
err4
PREAI
errLin, Chih-Yang; Zhou, Kuan-Ju; Chang, Ting-Chang; Sun, Li-Chuan; Tan, Yung-Fang; Wu, Chung-Wei; Yeh, Yu-Hsuan; Chen, Wen-Chung; Lin, Chun-Chu; Huang, Wei-Chen; Wu, Cheng-Hsien; Lin, Shih-Kai; Lin, Tzu-Heng; Huang, Jen-Wei; Sze, Simon M.
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The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatment
err2019-12-06
err71
PREAI
errChang, TC; Liu, PT; Mor, YS; Sze, SM; Yang, YL; Feng, MS; Pan, FM; Dai, BT; Chang, CY
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Investigation of the forming process under UV illumination in HfO2-based resistance random access memory with a transparent electrode
err2019-10-25
err2
PREAI
errHuang, Wei-Chen; Huang, Shin-Ping; Chen, Po-Hsun; Chen, Min-Chen; Chang, Ting-Chang; Shih, Chih-Cheng; Tseng, Yi-Ting; Zheng, Hao-Xuan; Tan, Yung-Fang; Wu, Chung-Wei; Yeh, Yuh-Suan; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.
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Highly durable and flexible gallium-based oxide conductive-bridging random access memory
err2019-10-02
err43
errOAAI
errGan, Kai-Jhih; Liu, Po-Tsun; Chien, Ta-Chun; Ruan, Dun-Bao; Sze, Simon M.
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