Jong-Keuk Park

korea institute of science and technology

H指数:24

被引数:1,704

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Spike-based Q-learning in a non-von Neumann architecture

Frontiers in Neuroscience

IF3.2

2026-02-030

OAAI

Achieving Low-Power Analog Resistive Switching in Filamentary Memristive Devices for Energy-Efficient Analog In-Memory Computing

在丝状忆阻器器件中实现低功耗模拟电阻开关，以实现高效能模拟存内计算

Small

IF12.1

2025-09-150

PRE

SPICE simulation methodology to diagnose defects in upscaled Si/ perovskite tandem solar cells

SPICE仿真方法用于诊断放大版Si/钙钛矿串联太阳能电池中的缺陷

SOLAR ENERGY

IF6.6

2025-05-010

PRE

Hybrid CMOS-Memristor synapse circuits for implementing Ca ion-based plasticity model (vol 14, 17915, 2024)

SCIENTIFIC REPORTS

IF3.9

2024-09-050

OAAI

Hybrid CMOS-Memristor synapse circuits for implementing Ca ion-based plasticity model

用于实现基于Ca离子的可塑性模型的混合CMOS-忆阻器突触电路

SCIENTIFIC REPORTS

IF3.9

2024-08-021

OAAI

Hardware Implementation of Network Connectivity Relationships Using 2D hBN-Based Artificial Neuron and Synaptic Devices

使用基于2D hBN的人工神经元和突触设备的网络连接关系的硬件实现

ADVANCED FUNCTIONAL MATERIALS

IF19

2023-11-0513

OAAI

Multifilamentary switching of Cu/SiOx memristive devices with a Ge-implanted a-Si underlayer for analog synaptic devices

NPG ASIA MATERIALS

IF8.3

2023-09-153

Microstructure of <111>-Textured Cubic Boron Nitride Film Deposited under Oxygen-Containing Atmosphere

ADVANCED ENGINEERING MATERIALS

IF3.3

2023-09-011

PRE

Reduction of carrier density and enhancement of the bulk Rashba spin- orbit coupling strength in Bi2Te3/GeTe superlattices

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2023-09-011

OAAI

Comparative Study on Residual Stress of Cubic Boron Nitride Films Deposited Using DC and RF Sputtering Sources

METALS AND MATERIALS INTERNATIONAL

IF4

2023-01-214

PRE

High Dynamic Range Digital Neuron Core With Time-Embedded Floating-Point Arithmetic

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

IF5.2

2023-01-013

PRE

Bottom-up evolution of consolidated porous diamond layer by hot-filament-CVD

SURFACES AND INTERFACES

IF6.3

2022-11-012

PRE

Cluster-type analogue memristor by engineering redox dynamics for high-performance neuromorphic computing

NATURE COMMUNICATIONS

IF15.7

2022-07-1247

OAAI

Three-Terminal Ovonic Threshold Switch (3T-OTS) with Tunable Threshold Voltage for Versatile Artificial Sensory Neurons

具有可调阈值电压的三端双向阈值开关 (3T-OTS)，用于多功能人工感觉神经元

NANO LETTERS

IF9.1

2022-01-1316

PRE

A pentagonal 2D layered PdSe2-based synaptic device with a graphene floating gate

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2022-01-0112

PRE

SPICE Study of STDP Characteristics in a Drift and Diffusive Memristor-Based Synapse for Neuromorphic Computing

IEEE ACCESS

IF3.6

2022-01-012

Transparent back-junction control in Cu(In,Ga)Se2 absorber for high-efficiency, color-neutral, and semitransparent solar module

PROGRESS IN PHOTOVOLTAICS

IF7.6

2021-12-159

PRE

Bottom-Up Evolution of Diamond-Graphite Hybrid Two-Dimensional Nanostructure: Underlying Picture and Electrochemical Activity

SMALL

IF12.1

2021-12-115

PRE

Ion beam-assisted solid phase epitaxy of SiGe and its application for analog memristors

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2021-12-017

OAAI

Enhanced analog synaptic behavior of SiNx/a-Si bilayer memristors through Ge implantation

NPG ASIA MATERIALS

IF8.3

2020-12-1126

OAAI

Jong-Keuk Park

个人简介

教育背景

工作经历

荣誉奖项

研究方向