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T

Tae Jun Seok

Department of Materials Science and Chemical Engineering

H指数:9

被引数:347

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Electronic threshold switching of As-embedded SiO2 selectors: charged oxygen vacancy model

As嵌入的SiO2选择器的电子阈值切换: 带电氧空位模型

Nano Convergence

IF11

2025-03-040

OAAI

Ternary Logic Transistors Using Multi-Stacked 2D Electron Gas Channels in Ultrathin Oxide Heterostructures

ADVANCED SCIENCE

IF14.1

2024-12-160

OA

High-quality SiNx thin-film growth at 300 °C using atomic layer deposition with hollow-cathode plasma

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2023-01-010

PRE

Black Si Photocathode with a Conformal and Amorphous MoSx Catalytic Layer Grown Using Atomic Layer Deposition for Photoelectrochemical Hydrogen Evolution

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2022-03-155

PRE

Chemical mechanism of formation of two-dimensional electron gas at the Al2O3/TiO2 interface by atomic layer deposition

MATERIALS TODAY ADVANCES

IF8

2021-12-018

OAAI

Interface Carriers and Enhanced Electron-Phonon Coupling Effect in Al2O3/TiO2 Heterostructure Revealed by Resonant Inelastic Soft X-Ray Scattering

ADVANCED FUNCTIONAL MATERIALS

IF19

2021-06-205

OAAI

In Situ Observation of Two-Dimensional Electron Gas Creation at the Interface of an Atomic Layer-Deposited Al2O3/TiO2 Thin-Film Heterostructure

CHEMISTRY OF MATERIALS

IF7

2020-07-2137

OAAI

Dependence of electrical properties on sulfur distribution in atomic-layer-deposited HfO2 thin film on an InP substrate

电性能对InP衬底上原子层沉积的HfO2薄膜中硫分布的依赖性

APPLIED SURFACE SCIENCE

IF6.9

2019-10-012

PREAI

Highly Uniform Resistive Switching Performances Using Two-Dimensional Electron Gas at a Thin-Film Heterostructure for Conductive Bridge Random Access Memory

在导电桥随机存取存储器的薄膜异质结构中使用二维电子气的高度均匀的电阻开关性能

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2019-07-2523

PREAI

High-Performance, Transparent Thin Film Hydrogen Gas Sensor Using 2D Electron Gas at Interface of Oxide Thin Film Heterostructure Grown by Atomic Layer Deposition

在通过原子层沉积生长的氧化物薄膜异质结构的界面处使用2D电子气的高性能透明薄膜氢气传感器

ADVANCED FUNCTIONAL MATERIALS

IF19

2018-12-1189

PREAI

Field-Effect Device Using Quasi-Two-Dimensional Electron Gas in Mass-Producible Atomic-Layer-Deposited Al2O3/TiO2 Ultrathin (<10 nm) Film Heterostructures

IF16

2018-09-1152

PREAI

Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation

APPLIED SURFACE SCIENCE

IF6.9

2016-03-012

PREAI

High quality interfacial sulfur passivation via H2S pre-deposition annealing for an atomic-layer-deposited HfO2 film on a Ge substrate

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2016-01-0118

PREAI

Improved interface properties of atomic-layer-deposited HfO2 film on InP using interface sulfur passivation with H2S pre-deposition annealing

使用界面硫钝化和H2S预沉积退火改善InP上原子层沉积HfO2膜的界面性能

APPLIED SURFACE SCIENCE

IF6.9

2015-12-0115

PREAI