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Plasma-Induced Nonvolatile Resistive Switching with Extremely Low SET Voltage in TiOxFy with AgF NanoparticlesACS APPLIED MATERIALS & INTERFACESIF8.22016-11-229PREAI
Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodesSCIENTIFIC REPORTSIF3.92015-12-2233OAAI
Single pairing spike-timing dependent plasticity in BiFeO3 memristors with a time window of 25 ms to 125 μsFRONTIERS IN NEUROSCIENCEIF3.22015-06-3053OAAI
Bipolar Electric-Field Enhanced Trapping and Detrapping of Mobile Donors in BiFeO3 MemristorsACS APPLIED MATERIALS & INTERFACESIF8.22014-11-1489PREAI
Exploiting Memristive BiFeO3 Bilayer Structures for Compact Sequential LogicsADVANCED FUNCTIONAL MATERIALSIF192014-02-24123PREAI
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