Uttam Singisetti - Publications, H-index & Citations

Uttam Singisetti

University at Buffalo

33H指数

204论文数

4.4K被引数

收录论文 31

发表时间

Effective phonon dispersion and low-field transport in β-(Al x Ga1-x )2O3 alloy semiconductor β-(Al_xGa_1-x)₂O₃合金半导体的有效声子色散和低场输运

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-05-15

OAAI

Sharma, Ankit; Datta, Animesh; Singisetti, Uttam

Comprehensive characterization of nitrogen-related defect states in β-Ga2O3 using quantitative optical and thermal defect spectroscopy methods

APL MATERIALS

IF4.5

2024-09-11

OAAI

Ghadi, Hemant; Cornuellue, Evan; Mcglone, Joe F.; Senckowski, Alexander; Sharma, Shivam; Wong, Man Hoi; Singisetti, Uttam; Ringel, Steven A.

Thin channel Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown

APPLIED PHYSICS LETTERS

IF3.6

2024-08-05

PREAI

Saha, Chinmoy Nath; Vaidya, Abhishek; Nipu, Noor Jahan; Meng, Lingyu; Yu, Dong Su; Zhao, Hongping; Singisetti, Uttam

Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies

APL MATERIALS

IF4.5

2023-11-07

OAAI

Ghadi, Hemant; Mcglone, Joe F.; Cornuelle, Evan; Senckowski, Alexander; Sharma, Shivam; Wong, Man Hoi; Singisetti, Uttam; Frodason, Ymir Kalmann; Peelaers, Hartwin; Lyons, John L.; Varley, Joel B.; van de Walle, Chris G.; Arehart, Aaron; Ringel, Steven A.

Electrical characteristics of in situ Mg-doped β-Ga2O3 current-blocking layer for vertical devices

APPLIED PHYSICS LETTERS

IF3.6

2023-09-26

PREAI

Saha, Sudipto; Meng, Lingyu; Bhuiyan, A. F. M. Anhar Uddin; Sharma, Ankit; Saha, Chinmoy Nath; Zhao, Hongping; Singisetti, Uttam

Atomic scale defect formation and phase transformation in Si implanted β-Ga2O3

APL MATERIALS

IF4.5

2023-06-05

OAAI

Huang, Hsien-Lien; Chae, Christopher; Johnson, Jared M.; Senckowski, Alexander; Sharma, Shivam; Singisetti, Uttam; Wong, Man Hoi; Hwang, Jinwoo

Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX

APPLIED PHYSICS LETTERS

IF3.6

2023-05-04

PREAI

Saha, Chinmoy Nath; Vaidya, Abhishek; Bhuiyan, A. F. M. Anhar Uddin; Meng, Lingyu; Sharma, Shivam; Zhao, Hongping; Singisetti, Uttam

Self-heating in ultra-wide bandgap n-type SrSnO3 thin films

APPLIED PHYSICS LETTERS

IF3.6

2022-10-20

OAAI

Golani, Prafful; Saha, Chinmoy Nath; Sundaram, Prakash P.; Liu, Fengdeng; Truttmann, Tristan K.; Chaganti, V. R. Saran Kumar; Jalan, Bharat; Singisetti, Uttam; Koester, Steven J.

Temperature dependent pulsed IV and RF characterization of β-(AlxGa1-x)2O3/Ga2O3 hetero-structure FET with ex situ passivation

APPLIED PHYSICS LETTERS

IF3.6

2022-04-25

OAAI

Saha, Chinmoy Nath; Vaidya, Abhishek; Singisetti, Uttam

Plasmon-Phonon Coupling in Electrostatically Gated β-Ga2O3 Films with Mobility Exceeding 200 cm2 V-1 s-1 迁移率超过200平方厘米V-1 s-1的静电门控 β-Ga2O3薄膜中的等离激元-声子耦合

ACS NANO

IF16

2022-04-18

PREAI

Rajapitamahuni, Anil Kumar; Manjeshwar, Anusha Kamath; Kumar, Avinash; Datta, Animesh; Ranga, Praneeth; Thoutam, Laxman Raju; Krishnamoorthy, Sriram; Singisetti, Uttam; Jalan, Bharat

Schottky diode characteristics on high-growth rate LPCVD β-Ga2O3 films on (010) and (001) Ga2O3 substrates

APPLIED PHYSICS LETTERS

IF3.6

2022-03-22

OAAI

Saha, Sudipto; Meng, Lingyu; Feng, Zixuan; Anhar Uddin Bhuiyan, A. F. M.; Zhao, Hongping; Singisetti, Uttam

High-electric-field behavior of the metal-insulator transition in TiS3 nanowire transistors

APPLIED PHYSICS LETTERS

IF3.6

2022-02-14

OAAI

Randle, M. D.; Lipatov, A.; Datta, A.; Kumar, A.; Mansaray, I.; Sinitskii, A.; Singisetti, U.; Han, J. E.; Bird, J. P.

β-Gallium oxide power electronics Β-氧化镓电力电子

APL MATERIALS

IF4.5

2022-02-07

322

OAAI

Green, Andrew J.; Speck, James; Xing, Grace; Moens, Peter; Allerstam, Fredrik; Gumaelius, Krister; Neyer, Thomas; Arias-Purdue, Andrea; Mehrotra, Vivek; Kuramata, Akito; Sasaki, Kohei; Watanabe, Shinya; Koshi, Kimiyoshi; Blevins, John; Bierwagen, Oliver; Krishnamoorthy, Sriram; Leedy, Kevin; Arehart, Aaron R.; Neal, Adam T.; Mou, Shin; Ringel, Steven A.; Kumar, Avinash; Sharma, Ankit; Ghosh, Krishnendu; Singisetti, Uttam; Li, Wenshen; Chabak, Kelson; Liddy, Kyle; Islam, Ahmad; Rajan, Siddharth; Graham, Samuel; Choi, Sukwon; Cheng, Zhe; Higashiwaki, Masataka

First principles study of thermoelectric properties of β-gallium oxide

APPLIED PHYSICS LETTERS

IF3.6

2020-12-28

OAAI

Kumar, Avinash; Singisetti, Uttam

Reply to Comment on 'Gate-Controlled Metal-Insulator Transition in TiS3 Nanowire Field-Effect Transistors'

ACS NANO

IF16

2019-08-27

OAAI

Randle, Michael; Lipatov, Alexey; Kumar, Avinash; Dowben, Peter A.; Sinitskii, Alexander; Singisetti, Uttam; Bird, Jonathan P.

Gate-Controlled Metal-Insulator Transition in TiS3 Nanowire Field-Effect Transistors

ACS NANO

IF16

2018-12-26

OAAI

Randle, Michael; Lipatov, Alexey; Kumar, Avinash; Kwan, Chun-Pui; Nathawat, Jubin; Barut, Bilal; Yin, Shenchu; He, Keke; Arabchigavkani, Nargess; Dixit, Ripudaman; Komesu, Takeshi; Avila, Jose; Asensio, Maria C.; Dowben, Peter A.; Sinitskii, Alexander; Singisetti, Uttam; Bird, Jonathan P.

Temperature dependent quasi-static capacitance-voltage characterization of SiO2/β-Ga2O3 interface on different crystal orientations

APPLIED PHYSICS LETTERS

IF3.6

2017-09-21

PREAI

Zeng, Ke; Singisetti, Uttam

Negative Differential Conductance & Hot-Carrier Avalanching in Monolayer WS2 FETs

SCIENTIFIC REPORTS

IF3.9

2017-09-12

OAAI

He, G.; Nathawat, J.; Kwan, C. -P.; Ramamoorthy, H.; Somphonsane, R.; Zhao, M.; Ghosh, K.; Singisetti, U.; Perea-Lopez, N.; Zhou, C.; Elias, A. L.; Terrones, M.; Gong, Y.; Zhang, X.; Vajtai, R.; Ajayan, P. M.; Ferry, D. K.; Bird, J. P.

Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2017-01-01

233

PREAI

Kim, Munho; Seo, Jung-Hun; Singisetti, Uttam; Ma, Zhenqiang

Ab initio calculation of electron-phonon coupling in monoclinic β-Ga2O3 crystal (vol 109, 072102, 2016)

APPLIED PHYSICS LETTERS

IF3.6

2016-08-31

PREAI

Ghosh, Krishnendu; Singisetti, Uttam

研究方向