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L

L. F. Edge

international business machines (ibm)
H指数:28
被引数:2,261
浏览量:0

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Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations
NATURE COMMUNICATIONS
IF15.7
2022-02-1761
OAAI
Connors, Elliot J.; Nelson, J.; Edge, Lisa F.; Nichol, John M.
Probing the Variation of the Intervalley Tunnel Coupling in a Silicon Triple Quantum Dot
PRX QUANTUM
IF11
2021-04-2722
OA
Borjans, F.; Zhang, X.; Mi, X.; Cheng, G.; Yao, N.; Jackson, C. A. C.; Edge, L. F.; Petta, J. R.
Progress toward a capacitively mediated CNOT between two charge qubits in Si/SiGe
NPJ QUANTUM INFORMATION
IF8.3
2020-09-1818
OAAI
MacQuarrie, E. R.; Neyens, Samuel F.; Dodson, J. P.; Corrigan, J.; Thorgrimsson, Brandur; Holman, Nathan; Palma, M.; Edge, L. F.; Friesen, Mark; Coppersmith, S. N.; Eriksson, M. A.
Microwave engineering for semiconductor quantum dots in a cQED architecture
APPLIED PHYSICS LETTERS
IF3.6
2020-08-2616
OAAI
Holman, Nathan; Dodson, J. P.; Edge, L. F.; Coppersmith, S. N.; Friesen, Mark; McDermott, R.; Eriksson, M. A.
Low-frequency charge noise in Si/SiGe quantum dots (vol 100, 165305, 2019)
PHYSICAL REVIEW B
IF3.7
2020-07-161
OAAI
Connors, Elliot J.; Nelson, J. J.; Qiao, Haifeng; Edge, Lisa F.; Nichol, John M.
Split-gate cavity coupler for silicon circuit quantum electrodynamics
APPLIED PHYSICS LETTERS
IF3.6
2020-06-0818
OAAI
Borjans, F.; Croot, X.; Putz, S.; Mi, X.; Quinn, S. M.; Pan, A.; Kerckhoff, J.; Pritchett, E. J.; Jackson, C. A.; Edge, L. F.; Ross, R. S.; Ladd, T. D.; Borselli, M. G.; Gyure, M. F.; Petta, J. R.
Two-axis quantum control of a fast valley qubit in silicon
NPJ QUANTUM INFORMATION
IF8.3
2019-11-0638
OAAI
Penthorn, Nicholas E.; Schoenfield, Joshua S.; Rooney, John D.; Edge, Lisa F.; Jiang, HongWen
Low-frequency charge noise in Si/SiGe quantum dots
PHYSICAL REVIEW B
IF3.7
2019-10-23112
OAAI
Connors, Elliot J.; Nelson, J. J.; Qiao, Haifeng; Edge, Lisa F.; Nichol, John M.
Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography
ADVANCED MATERIALS INTERFACES
IF4.4
2017-09-2938
PREAI
Dyck, Ondrej; Leonard, Donovan N.; Edge, Lisa F.; Jackson, Clayton A.; Pritchett, Emily J.; Deelman, Peter W.; Poplawsky, Jonathan D.
Metamorphic materials for quantum computing
MRS BULLETIN
IF4.9
2016-03-1420
PREAI
Deelman, Peter W.; Edge, Lisa F.; Jackson, Clayton A.
Measurement of oxygen diffusion in nanometer scale HfO2 gate dielectric films
APPLIED PHYSICS LETTERS
IF3.6
2011-04-1483
PREAI
Zafar, Sufi; Jagannathan, Hemanth; Edge, Lisa F.; Gupta, Devendra
Materials and electrical characterization of physical vapor deposited LaxLu1-xO3 thin films on 300 mm silicon
APPLIED PHYSICS LETTERS
IF3.6
2011-03-238
PREAI
Edge, L. F.; Vo, T.; Paruchuri, V. K.; Iijima, R.; Bruley, J.; Jordan-Sweet, J.; Linder, B. P.; Kellock, A. J.; Tsunoda, T.; Shinde, S. R.
Stability of terbium scandate on Si(100)
APPLIED PHYSICS LETTERS
IF3.6
2010-11-0312
OAAI
Copel, M.; Bojarczuk, N.; Edge, L. F.; Guha, S.
Si-compatible candidates for high-κ dielectrics with the Pbnm perovskite structure
PHYSICAL REVIEW B
IF3.7
2010-08-0371
OAAI
Coh, Sinisa; Heeg, Tassilo; Haeni, J. H.; Biegalski, M. D.; Lettieri, J.; Edge, L. F.; O'Brien, K. E.; Bernhagen, M.; Reiche, P.; Uecker, R.; Trolier-McKinstry, S.; Schlom, Darrell G.; Vanderbilt, David
Band offsets between Si and epitaxial rare earth sesquioxides (RE2O3, RE=La,Nd,Gd,Lu): Effect of 4f-shell occupancy
APPLIED PHYSICS LETTERS
IF3.6
2008-11-1120
PREAI
Afanas'ev, V. V.; Badylevich, M.; Stesmans, A.; Laha, A.; Osten, H. J.; Fissel, A.; Tian, W.; Edge, L. F.; Schlom, D. G.
Misfit point defects at the epitaxial Lu2O3/(111)Si interface revealed by electron spin resonance
APPLIED PHYSICS LETTERS
IF3.6
2008-09-096
PREAI
Stesmans, A.; Somers, P.; Afanas'ev, V. V.; Tian, W.; Edge, L. F.; Schlom, D. G.
Conduction band energies and hot-electron transport characteristics of epitaxial Sc2O3/Si (111) studied by ballistic electron emission microscopy and internal photoemission
APPLIED PHYSICS LETTERS
IF3.6
2007-07-2410
PREAI
Cai, W.; Stone, S. E.; Pelz, J. P.; Edge, L. F.; Schlom, D. G.
Electron tunneling spectroscopy study of amorphous films of the gate dielectric candidates LaAlO3 and LaScO3
APPLIED PHYSICS LETTERS
IF3.6
2007-01-3017
PREAI
Wang, M.; He, W.; Ma, T. P.; Edge, L. F.; Schlom, D. G.
Thermal stability of lanthanum scandate dielectrics on Si(100)
APPLIED PHYSICS LETTERS
IF3.6
2006-12-1214
PREAI
Sivasubramani, P.; Lee, T. H.; Kim, M. J.; Kim, J.; Gnade, B. E.; Wallace, R. M.; Edge, L. F.; Schlom, D. G.; Stevie, F. A.; Garcia, R.; Zhu, Z.; Griffis, D. P.
Nature and stability of the (100)Si/LaAlO3 interface probed by paramagnetic defects
APPLIED PHYSICS LETTERS
IF3.6
2006-09-144
PREAI
Stesmans, A.; Clemer, K.; Afanas'ev, V. V.; Edge, L. F.; Schlom, D. G.

研究方向

暂未获取到该数据
D
Darrell G. Schlom
H 指数:110论文数:1,257被引数:6.0万
J
J. Schubert
H 指数:54论文数:499被引数:1.3万
C
Clayton Jackson
H 指数:18论文数:57被引数:1,004
R
Robert M. Wallace
H 指数:91论文数:622被引数:4.6万
J
John M. Nichol
H 指数:19论文数:117被引数:1,955
S
Susanne Stemmer
H 指数:66论文数:575被引数:1.7万
E
Elliot J. Connors
H 指数:5论文数:17被引数:488
J
JJ Nelson
H 指数:14论文数:51被引数:1,472
P
P. Sivasubramani
H 指数:14论文数:39被引数:742
田
田微
H 指数:50论文数:381被引数:1.0万