J. M. Olson - Publications, H-index & Citations

J. M. Olson

机构信息待补充

33H指数

190论文数

5.5K被引数

收录论文 14

发表时间

Publisher's Note: X-ray diffraction and excitation photoluminescence analysis of ordered GaInP (vol 58, pg 15355, 1998)

PHYSICAL REVIEW B

IF3.7

2008-09-08

OAAI

Forrest, R. L.; Golding, T. D.; Moss, S. C.; Zhang, Y.; Geisz, J. F.; Olson, J. M.; Mascarenhas, A.; Ernst, P.; Geng, C.

High-efficiency GaInP/GaAs/InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction

APPLIED PHYSICS LETTERS

IF3.6

2007-07-10

466

PREAI

Geisz, J. F.; Kurtz, Sarah; Wanlass, M. W.; Ward, J. S.; Duda, A.; Friedman, D. J.; Olson, J. M.; McMahon, W. E.; Moriarty, T. E.; Kiehl, J. T.

Linear photon upconversion of 400 meV in an AlGaInP/GaInP quantum well heterostructure to visible light at room temperature

APPLIED PHYSICS LETTERS

IF3.6

2006-04-17

PREAI

Olson, MR; Russell, KJ; Narayanamurti, V; Olson, JM; Appelbaum, I

Effect of growth rate and gallium source on GaAsN

APPLIED PHYSICS LETTERS

IF3.6

2003-04-21

PREAI

Kurtz, S; Geisz, JF; Keyes, BM; Metzger, WK; Friedman, DJ; Olson, JM; Ptak, AJ; King, RR; Karam, NH

QUANTIZATION EFFECTS IN THE PHOTOCURRENT SPECTROSCOPY OF SUPERLATTICE ELECTRODES

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

IF15.6

2002-05-01

PREAI

NOZIK, AJ; THACKER, BR; TURNER, JA; OLSON, JM

Analysis of Ge junctions for GaInP/GaAs/Ge three-junction solar cells

PROGRESS IN PHOTOVOLTAICS

IF7.6

2001-05-24

PREAI

Friedman, DJ; Olson, JM

Structural changes during annealing of GaInAsN

APPLIED PHYSICS LETTERS

IF3.6

2001-02-05

237

PREAI

Kurtz, S; Webb, J; Gedvilas, L; Friedman, D; Geisz, J; Olson, J; King, R; Joslin, D; Karam, N

Effect of nitrogen on the electronic band structure of group III-N-V alloys

PHYSICAL REVIEW B

IF3.7

2000-08-15

119

PREAI

Shan, W; Walukiewicz, W; Yu, KM; Ager, JW; Haller, EE; Geisz, JF; Friedman, DJ; Olson, JM; Kurtz, SR; Nauka, C

Resonant Raman scattering in spontaneously ordered GaInP2

PHYSICAL REVIEW B

IF3.7

2000-07-15

PREAI

Cheong, HM; Mascarenhas, A; Geisz, JF; Olson, JM

Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys

PHYSICAL REVIEW B

IF3.7

2000-05-15

PREAI

Yu, KM; Walukiewicz, W; Shan, W; Ager, JW; Wu, J; Haller, EE; Geisz, JF; Friedman, DJ; Olson, JM

Large, nitrogen-induced increase of the electron effective mass in InyGa1-yNxAs1-x

APPLIED PHYSICS LETTERS

IF3.6

2000-04-24

252

PREAI

Skierbiszewski, C; Perlin, P; Wisniewski, P; Knap, W; Suski, T; Walukiewicz, W; Shan, W; Yu, KM; Ager, JW; Haller, EE; Geisz, JF; Olson, JM

Atomic-resolution STM study of a structural phase transition of steps on vicinal As/Ge(100)

PHYSICAL REVIEW B

IF3.7

1999-12-15

PREAI

McMahon, WE; Olson, JM

Near-band-gap reflectance anisotropy in ordered Ga0.5In0.5P

PHYSICAL REVIEW B

IF3.7

1997-06-15

PREAI

Luo, JS; Olson, JM; Zhang, Y; Mascarenhas, A

SELF-INFERENCE PROCESSES - THE ONTARIO SYMPOSIUM, VOL 6 - OLSON,JM, ZANNA,MP

JOURNAL OF MARKETING RESEARCH

IF5

1992-08-01

PREAI

WALKER, BA; OLSON, J

研究方向