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Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer Kim, Haesung; Yang, Hyojin; Lee, Seongwon; Yun, Sanghyuk; Park, Junseong; Park, Sejun; Lee, Ha-Neul; Kim, Hyeonsik; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Dong Myong; Kwon, Daewoong; Bae, Jong-Ho 分享 收藏
Proposition of Adaptive Read Bias: A Solution to Overcome Power and Scaling Limitations in Ferroelectric-Based Neuromorphic System 自适应读取偏差的提议: 克服基于铁电的神经形态系统中的功率和缩放限制的解决方案 Koo, Ryun-Han; Shin, Wonjun; Kim, Seungwhan; Im, Jiseong; Park, Sung-Ho; Ko, Jong Hyun; Kwon, Dongseok; Kim, Jae-Joon; Kwon, Daewoong; Lee, Jong-Ho 分享 收藏
Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0.5Zr0.5O2 (vol 160, 107401, 2023) Han, Changhyeon; Kwon, Ki Ryun; Kim, Jeonghan; Yim, Jiyong; Kim, Sangwoo; Park, Eun Chan; You, Ji Won; Jeong, Soi; Choi, Rino; Kwon, Daewoong 分享 收藏
Ferroelectricity of pure HfOx in metal-ferroelectric-insulator-semiconductor stacks and its memory application 金属-铁电-绝缘体-半导体叠层中纯HfOx的铁电性及其存储应用 Min, Kyung Kyu; Yu, Junsu; Kim, Yeonwoo; Kim, Chae Soo; Jang, Taejin; Hwang, Sungmin; Kim, Hyungjin; Lee, Jong-Ho; Kwon, Daewoong; Park, Byung-Gook 分享 收藏
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