Masakazu Arai - Publications, H-index & Citations

Masakazu Arai

university of miyazaki

11H指数

158论文数

382被引数

收录论文 10

发表时间

Mesh-shaped electrode thickness dependence of 1.06 μm range InGaAsP photovoltaic characteristics under high-intensity laser irradiation 网格状电极厚度对1.06 μm波段InGaAsP光伏特性的高强激光辐照依赖性

JAPANESE JOURNAL OF APPLIED PHYSICS

IF1.8

2025-10-01

PREAI

Oshimo, Takaya; Motomura, Yuga; Tabata, Kotona; Yamada, Takeru; Aonuki, Sho; Ochiai, Natsuha; Suzuki, Yukiko; Kashiwakura, Kazuto; Toriumi, Youhei; Takahashi, Madoka; Suzuki, Junichi; Aoyama, Reo; Uchida, Shiro; Akahane, Kouichi; Nishioka, Kensuke; Asami, Meita; Arai, Masakazu

High-Efficiency InGaAsP Photovoltaic Devices for Optical Wireless Power Transmission in the 1.06 μm Range 高效率InGaAsP光伏器件在1.06 μm范围内的光无线电力传输

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

IF1.9

2025-09-01

PREAI

Oshimo, Takaya; Motomura, Yuga; Tabata, Kotona; Yamada, Takeru; Aonuki, Sho; Ochiai, Natsuha; Suzuki, Yukiko; Kashiwakura, Kazuto; Toriumi, Yohei; Takahashi, Madoka; Suzuki, Junichi; Aoyama, Reo; Uchida, Shiro; Akahane, Kouichi; Nishioka, Kensuke; Asami, Meita; Arai, Masakazu

Over 1 A/mm drain current density and 3.6 W/mm output power density in 2DHG diamond MOSFETs with highly doped regrown source/drain

CARBON

IF11.6

2022-03-01

OAAI

Kudara, Ken; Arai, Masakazu; Suzuki, Yukiko; Morishita, Aoi; Tsunoda, Jun; Hiraiwa, Atsushi; Kawarada, Hiroshi

GeSn/SiGeSn Multiple-Quantum-Well Electroabsorption Modulator With Taper Coupler for Mid-Infrared Ge-on-Si Platform

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

IF5.1

2018-11-01

OAAI

Akie, Minami; Fujisawa, Takeshi; Sato, Takanori; Arai, Masakazu; Saitoh, Kunimasa

1.3-μm InGaAs MQW Metamorphic Laser Diode Fabricated With Lattice Relaxation Control Based on In Situ Curvature Measurement

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

IF5.1

2015-11-01

PREAI

Nakao, Ryo; Arai, Masakazu; Kobayashi, Wataru; Yamamoto, Tsuyoshi; Matsuo, Shinji

Novel approach for chirp and output power compensation applied to a 40-Gbit/s EADFB laser integrated with a short SOA

OPTICS EXPRESS

IF3.3

2015-04-03

OAAI

Kobayashi, Wataru; Arai, Masakazu; Fujisawa, Takeshi; Sato, Tomonari; Ito, Toshio; Hasebe, Koichi; Kanazawa, Shigeru; Ueda, Yuta; Yamanaka, Takayuki; Sanjoh, Hiroaki

Planar n-SI-n heterostructure athermal InP (110) optical modulator

OPTICS EXPRESS

IF3.3

2014-10-14

OAAI

Ogiso, Yoshihiro; Nakanishi, Yasuhiko; Kanazawa, Shigeru; Yamada, Eiichi; Tanobe, Hiromasa; Arai, Masakazu; Shibata, Yasuo; Kohtoku, Masaki

Full C-Band 10-Gb/s 40-km SMF Transmission of InGaAlAs Electroabsorption Modulator 全c波段10-Gb/s 40-km SMF传输InGaAlAs电吸收调制器

JOURNAL OF LIGHTWAVE TECHNOLOGY

IF4.8

2010-10-01

PREAI

Kobayashi, Wataru; Fujiwara, Naoki; Yamanaka, Takayuki; Tadokoro, Takashi; Fujisawa, Takeshi; Shibata, Yasuo; Ishikawa, Mitsuteru; Arai, Masakazu; Tsuzuki, Ken; Kano, Fumiyoshi

High-Temperature Operation of 1.26-μm Ridge Waveguide Laser With InGaAs Metamorphic Buffer on GaAs Substrate

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

IF5.1

2009-01-01

PREAI

Arai, Masakazu; Nakashima, Kiichi; Fujisawa, Takeshi; Tadokoro, Takashi; Kobayashi, Wataru; Yuda, Masahiro; Kondo, Yasuhiro

High-characteristic-temperature 1.3-μm-band laser on an InGaAs ternary substrate grown bythe traveling liquidus-zone method

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

IF5.1

2007-01-01

PREAI

Arai, Masakazu; Watanabe, Takao; Yuda, Masahiro; Kinoshita, Kyoichi; Yoda, Shinichi; Kondo, Yasuhiro

研究方向