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H

Hiroshi Kawarada

Waseda University

61H指数
740论文数
1.3W被引数
收录论文 105
发表时间
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Properties of oxynitride AlGaON/AlON films grown on diamond (111) substrate by remote N-plasma assisted MBE在金刚石(111)衬底上通过远程N等离子体辅助MBE生长的氧氮化铝AlGaON/AlON薄膜的性能
errDiamond and Related Materials
IF5.1
err2026-09-23
err0
PREAI
errShozo Kono; Kohei Shima; Shigefusa F. Chichibu; Hiroshi Kawarada
err分享
err收藏
Novel Monolithic CAVET-HEMT Integration for Inverting-Switch Operation新型整体式CAVET-HEMT集成用于反相开关操作
errACS Omega
IF4.3
err2026-04-24
err0
errOAAI
errWeng-Hooi Tan; Haocheng Zhao; Muhammad Farizuan; Amirul Firdaus; Hiroshi Kawarada; Tao Tao; Shaili Falina; Mohd Syamsul
err分享
err收藏
Atomic imaging for hydrogen and boron aggregates in boron-doped diamond by spectro-photoelectron holography硼掺杂金刚石中氢和硼聚集体的原子成像：通过光谱光电子全息术
errNature Communications
IF15.7
err2026-03-05
err0
errOAAI
errHiroto Tomita; Wataru Hosoda; Takumi Taniguchi; Hirokazu Fujiwara; Noriyuki Kataoka; Taisuke Kageura; Yoshihiko Takano; Hiroshi Kawarada; Tamio Oguchi; Takayoshi Yokoya; Tomohiro Matsushita
err分享
err收藏
High power GaN HEMTs unleashed: Epitaxial design and strategies高功率GaN HEMTs的释放：外延设计与策略
errMaterials Science in Semiconductor Processing
IF4.6
err2026-02-21
err0
PREAI
errMuhammad Farizuan; Tan Weng-Hooi; Zhao Haocheng; Amirul Firdaus; Hiroshi Kawarada; Shaili Falina; Mohd Syamsul
err分享
err收藏
DC and RF characteristics of scalable multi-finger 2DHG diamond MOSFETs with a source-via structure可扩展的多指2DHG金刚石MOSFET的直流和射频特性（采用源极通孔结构）
errJapanese Journal of Applied Physics
IF1.8
err2026-01-30
err0
PREAI
errOta, Kosuke; Chou, Yukihiro; Narita, Kento; Hashimoto, Yutaro; Takano, Yuki; Hiraiwa, Atsushi; Deura, Momoko; Ueda, Kenji; Kawarada, Hiroshi
err分享
err收藏
Heavily Boron-Doped Source/Drain Layers for Low Contact Resistance and Subthreshold Swing in (001) C–H Diamond MOSFETs高硼掺杂源/漏层用于(001) C–H金刚石MOSFET的低接触电阻和亚阈值摆幅
errIEEE Electron Device Letters
IF4.5
err2026-01-06
err0
errOAAI
errRyosuke Yamamoto; Kento Narita; Kosuke Ota; Nobutaka Oi; Atsushi Hiraiwa; Tatsuya Fujishima; Hiroshi Kawarada
err分享
err收藏
Unveiling GaN HEMT Structure–Performance Relationships: A TCAD-Validated Framework for Physical Model Selection揭示GaN HEMT结构-性能关系：一个经TCAD验证的物理模型选择框架
errMicro and Nanostructures
IF3
err2025-11-08
err0
PREAI
errWeng-Hooi Tan; Haocheng Zhao; Muhammad Farizuan; Amirul Firdaus; Hiroshi Kawarada; Shaili Falina; Mohd Syamsul
err分享
err收藏
Ion-selective membrane-integrated water-gated AlGaN/GaN HEMT for high-stability detection of agricultural herbicides离子选择性膜集成的水门AlGaN/GaN HEMT，用于高稳定性检测农业除草剂
errResults in Physics
IF4.6
err2025-07-28
err0
errOAAI
errAmirul Firdaus; Najihah Fauzi; Shuhadah Ismail; Nur Atiqah Hamzah; Rashidah Shukor; Hiroshi Kawarada; Shaili Falina; Mohd Syamsul
err分享
err收藏
A Comparative Modelling Study of New Robust Packaging Technology 1 mm2 VCSEL Packages and Their Mechanical Stress Properties (vol 13, 1513, 2022)新鲁棒封装技术1 mm² VCSEL封装及其机械应力特性的比较建模研究（卷13，1513，2022）
errMICROMACHINES
IF3
err2025-03-28
err0
errOAAI
errArshad, Khairul Mohd; Noor, Muhamad Mat; Abd Manaf, Asrulnizam; Kawarada, Hiroshi; Falina, Shaili; Syamsul, Mohd
err分享
err收藏
Exceptional reliability and stability AuNis-AlGaN/GaN HEMT sensor for pH detection用于pH检测的卓越可靠性和稳定性AuNis-AlGaN/GaN HEMT传感器
errSURFACES AND INTERFACES
IF6.3
err2025-02-01
err0
PREAI
errFauzi, Najihah; Firdaus, Amirul; Zhao, Haocheng; Ahmad, Mohd Anas; Kawarada, Hiroshi; Falina, Shaili; Syamsul, Mohd
err分享
err收藏
The role of gallium nitride in the evolution of electric vehicles: Energy applications, technology, and challenges
errAPPLIED PHYSICS REVIEWS
IF11.6
err2024-09-11
err0
PREAI
errRahman, Kazi Faridur; Falina, Shaili; Mohamed, Mohamed Fauzi Packeer; Kawarada, Hiroshi; Syamsul, Mohd
err分享
err收藏
Advanced Potentiometric Configuration to Enhance Stability and Reliability of AlGaN/GaN HEMT-Based Water-Gated pH Sensor先进的电位配置，可增强AlGaN/GaN HEMT基水门控pH传感器的稳定性和可靠性
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2024-08-22
err0
PREAI
errFirdaus, Amirul; Fauzi, Najihah; Ismail, Shuhadah; Kawarada, Hiroshi; Falina, Shaili; Syamsul, Mohd
err分享
err收藏
Normally-off operation in vertical diamond MOSFETs using an oxidized Si-terminated diamond channel使用氧化的Si终止金刚石沟道在垂直金刚石mosfet中的常关操作
errCARBON
IF11.6
err2023-09-01
err3
PREAI
errOta, Kosuke; Fu, Yu; Narita, Kento; Wakabayashi, Chiyuki; Hiraiwa, Atsushi; Fujishima, Tatsuya; Kawarada, Hiroshi
err分享
err收藏
Status and Prospects of Heterojunction-Based HEMT for Next-Generation Biosensors
errMICROMACHINES
IF3
err2023-01-27
err12
errOAAI
errFauzi, Najihah; Asri, Rahil Izzati Mohd; Omar, Mohamad Faiz Mohamed; Abd Manaf, Asrulnizam; Kawarada, Hiroshi; Falina, Shaili; Syamsul, Mohd
err分享
err收藏
Diamond p-FETs using two-dimensional hole gas for high frequency and high voltage complementary circuits
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2022-12-28
err17
PREAI
errKawarada, Hiroshi
err分享
err收藏
Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review
errMICROMACHINES
IF3
err2022-12-01
err40
errOAAI
errHaziq, Muhaimin; Falina, Shaili; Manaf, Asrulnizam Abd; Kawarada, Hiroshi; Syamsul, Mohd
err分享
err收藏
Two-Dimensional Non-Carbon Materials-Based Electrochemical Printed Sensors: An Updated Review基于二维非碳材料的电化学印刷传感器: 最新综述
errSENSORS
IF3.5
err2022-12-01
err8
errOAAI
errFalina, Shaili; Anuar, Khairu; Shafiee, Saiful Arifin; Juan, Joon Ching; Manaf, Asrulnizam Abd; Kawarada, Hiroshi; Syamsul, Mohd
err分享
err收藏
A Comparative Modelling Study of New Robust Packaging Technology 1 mm2 VCSEL Packages and Their Mechanical Stress Properties1平方毫米VCSEL封装的新型鲁棒封装技术及其机械应力特性的比较建模研究
errMICROMACHINES
IF3
err2022-09-13
err0
errOAAI
errArshad, Khairul Mohd; Noor, Muhamad Mat; Abd Manaf, Asrulnizam; Kawarada, Hiroshi; Falina, Shaili; Syamsul, Mohd
err分享
err收藏
C-Si interface on SiO2/(111) diamond p-MOSFETs with high mobility and excellent normally-off operation
errAPPLIED SURFACE SCIENCE
IF6.9
err2022-08-01
err17
errOAAI
errZhu, Xiaohua; Bi, Te; Yuan, Xiaolu; Chang, Yuhao; Zhang, Runming; Fu, Yu; Tu, Juping; Huang, Yabo; Liu, Jinlong; Li, Chengming; Kawarada, Hiroshi
err分享
err收藏
Fluorine-Terminated Polycrystalline Diamond Solution-Gate Field-Effect Transistor Sensor with Smaller Amount of Unexpectedly Generated Fluorocarbon Film Fabricated by Fluorine Gas Treatment
errMATERIALS
IF3.2
err2022-04-19
err2
errOAAI
errShintani, Yukihiro; Kawarada, Hiroshi
err分享
err收藏

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