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Burt Fowler

university of texas system

H指数:23

被引数:1,593

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Complementary Metal-Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing

用于神经形态计算的互补金属氧化物半导体和忆阻硬件

ADVANCED INTELLIGENT SYSTEMS

IF6.1

2020-04-14112

OA

A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application

SCIENTIFIC REPORTS

IF3.9

2019-08-2736

OAAI

Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application (vol 51, 055108, 2018)

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2018-04-202

PREAI

Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2018-01-1622

PREAI

Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applications

IF5.1

2018-01-0132

PREAI

Beyond SiOx: an active electronics resurgence and biomimetic reactive oxygen species production and regulation from mitochondria

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2018-01-019

PREAI

Unidirectional threshold resistive switching in Au/NiO/Nb:SrTiO3 devices

APPLIED PHYSICS LETTERS

IF3.6

2017-06-0727

PREAI

Proton exchange reactions in SiOx-based resistive switching memory: Review and insights from impedance spectroscopy

PROGRESS IN SOLID STATE CHEMISTRY

IF10.5

2016-09-0142

PREAI

Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide

SCIENTIFIC REPORTS

IF3.9

2016-02-1680

OAAI

Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory

APPLIED PHYSICS LETTERS

IF3.6

2016-01-2034

PREAI

Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory

APPLIED PHYSICS LETTERS

IF3.6

2015-02-1343

OAAI

Discussion on device structures and hermetic encapsulation for SiOx random access memory operation in air

APPLIED PHYSICS LETTERS

IF3.6

2014-10-2120

OAAI

Characterization of external resistance effect and performance optimization in unipolar-type SiOx-based resistive switching memory

APPLIED PHYSICS LETTERS

IF3.6

2014-09-2918

PREAI

Integrated One Diode-One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

IF9.1

2013-12-30105

PREAI

Effects of sidewall etching on electrical properties of SiOx resistive random access memory

APPLIED PHYSICS LETTERS

IF3.6

2013-11-2022

PREAI

Investigation of edge- and bulk-related resistive switching behaviors and backward-scan effects in SiOx-based resistive switching memory

APPLIED PHYSICS LETTERS

IF3.6

2013-11-0432

PREAI

Oxygen-induced bi-modal failure phenomenon in SiOx-based resistive switching memory

APPLIED PHYSICS LETTERS

IF3.6

2013-07-1831

PREAI

Effect of hydrogen/deuterium incorporation on electroforming voltage of SiOx resistive random access memory

APPLIED PHYSICS LETTERS

IF3.6

2012-11-0220

OAAI

Study of polarity effect in SiOx-based resistive switching memory

APPLIED PHYSICS LETTERS

IF3.6

2012-07-3051

PREAI

Memory switching properties of e-beam evaporated SiOx on N++ Si substrate

APPLIED PHYSICS LETTERS

IF3.6

2012-02-2148

PREAI