D. J. Eaglesham - Publications, H-index & Citations

D. J. Eaglesham

机构信息待补充

52H指数

247论文数

1.2W被引数

收录论文 26

发表时间

Behavior of molybdenum in silicon evaluated for integrated circuit processing

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

Benton, JL; Jacobson, DC; Jackson, B; Johnson, JA; Boone, T; Eaglesham, DJ; Stevie, FA; Becerro, J

The mechanisms of iron gettering in silicon by boron ion-implantation

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

OAAI

Benton, JL; Stolk, PA; Eaglesham, DJ; Jacobson, DC; Cheng, JY; Poate, JM; Myers, SM; Haynes, TE

MRS addresses visa delays inhibiting scientific progress in the United States

MRS BULLETIN

IF4.9

2011-01-31

OAAI

Katz, HE; Mayo, MJ; Eaglesham, DJ

Fabrication of a carbon nanotube-embedded silicon nitride membrane for studies of nanometer-scale mass transport

NANO LETTERS

IF9.1

2004-09-30

185

OAAI

Holt, JK; Noy, A; Huser, T; Eaglesham, D; Bakajin, O

The role of oxygen on the stability of gettering of metals to cavities in silicon

APPLIED PHYSICS LETTERS

IF3.6

1999-10-18

PREAI

Williams, JS; Conway, MJ; Wong-Leung, J; Deenapanray, PNK; Petravic, M; Brown, RA; Eaglesham, DJ; Jacobson, DC

Boron-enhanced diffusion of boron from ultralow-energy ion implantation

APPLIED PHYSICS LETTERS

IF3.6

1999-04-26

PREAI

Agarwal, A; Gossmann, HJ; Eaglesham, DJ; Herner, SB; Fiory, AT; Haynes, TE

Boron-enhanced diffusion of boron: Physical mechanisms

APPLIED PHYSICS LETTERS

IF3.6

1999-04-19

PREAI

Agarwal, A; Gossmann, HJ; Eaglesham, DJ

Diffusion and transient trapping of metals in silicon

PHYSICAL REVIEW B

IF3.7

1999-03-15

PREAI

Wong-Leung, J; Williams, JS; Kinomura, A; Nakano, Y; Hayashi, Y; Eaglesham, DJ

Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

APPLIED PHYSICS LETTERS

IF3.6

1999-03-01

PREAI

Venezia, VC; Haynes, TE; Agarwal, A; Pelaz, L; Gossmann, HJ; Jacobson, DC; Eaglesham, DJ

Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation

APPLIED PHYSICS LETTERS

IF3.6

1999-02-08

OAAI

Baumvol, IJR; Krug, C; Stedile, FC; Green, ML; Jacobson, DC; Eaglesham, D; Bernstein, JD; Shao, J; Denholm, AS; Kellerman, PL

Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation

APPLIED PHYSICS LETTERS

IF3.6

1998-12-21

284

PREAI

Weldon, MK; Collot, M; Chabal, YJ; Venezia, VC; Agarwal, A; Haynes, TE; Eaglesham, DJ; Christman, SB; Chaban, EE

Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling

APPLIED PHYSICS LETTERS

IF3.6

1998-11-16

PREAI

Venezia, VC; Eaglesham, DJ; Haynes, TE; Agarwal, A; Jacobson, DC; Gossmann, HJ; Baumann, FH

Transient enhanced diffusion from decaborane molecular ion implantation

APPLIED PHYSICS LETTERS

IF3.6

1998-10-05

PREAI

Agarwal, A; Gossmann, HJ; Jacobson, DC; Eaglesham, DJ; Sosnowski, M; Poate, JM; Yamada, I; Matsuo, J; Haynes, TE

Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the +1 model

APPLIED PHYSICS LETTERS

IF3.6

1998-09-07

PREAI

Pelaz, L; Gilmer, GH; Jaraiz, M; Herner, SB; Gossmann, HJ; Eaglesham, DJ; Hobler, G; Rafferty, CS; Barbolla, J

Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING

IF7

1998-09-01

PREAI

Agarwal, A; Gossmann, HJ; Eaglesham, DJ; Pelaz, L; Jacobson, DC; Poate, JM; Haynes, TE

Efficient production of silicon-on-insulator films by co-implantation of He+ with H+

APPLIED PHYSICS LETTERS

IF3.6

1998-03-02

336

PREAI

Agarwal, A; Haynes, TE; Venezia, VC; Holland, OW; Eaglesham, DJ

Reduction of transient diffusion from 1-5 keV Si+ ion implantation due to surface annihilation of interstitials

APPLIED PHYSICS LETTERS

IF3.6

1997-11-24

PREAI

Agarwal, A; Gossmann, HJ; Eaglesham, DJ; Pelaz, L; Jacobson, DC; Haynes, TE; Erokhin, YE

Evolution of interstitial- and vacancy-type defects upon thermal annealing in ion-implanted Si

APPLIED PHYSICS LETTERS

IF3.6

1997-07-21

PREAI

Libertino, S; Benton, JL; Jacobson, DC; Eaglesham, DJ; Poate, JM; Coffa, S; Kringhoj, P; Fuochi, PG; Lavalle, M

Microstructure of sputtered TiN on Al

APPLIED PHYSICS LETTERS

IF3.6

1997-07-14

PREAI

Eaglesham, DJ; Bower, JE; Marcus, MA; Gross, M; Merchant, S

Interstitial defects in silicon from 1-5 keV Si+ ion implantation

APPLIED PHYSICS LETTERS

IF3.6

1997-06-23

PREAI

Agarwal, A; Haynes, TE; Eaglesham, DJ; Gossmann, HJ; Jacobson, DC; Poate, JM; Erokhin, YE

研究方向