J. M. Poate - Publications, H-index & Citations

J. M. Poate

机构信息待补充

75H指数

433论文数

2.2W被引数

收录论文 16

发表时间

The mechanisms of iron gettering in silicon by boron ion-implantation

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

OAAI

Benton, JL; Stolk, PA; Eaglesham, DJ; Jacobson, DC; Cheng, JY; Poate, JM; Myers, SM; Haynes, TE

Nickel silicidation on n and p-type junctions at 300 °C

APPLIED PHYSICS LETTERS

IF3.6

2004-07-19

PREAI

Jiang, YL; Agarwal, A; Ru, GP; Qu, XP; Poate, J; Li, BZ; Holland, W

Transient enhanced diffusion from decaborane molecular ion implantation

APPLIED PHYSICS LETTERS

IF3.6

1998-10-05

PREAI

Agarwal, A; Gossmann, HJ; Jacobson, DC; Eaglesham, DJ; Sosnowski, M; Poate, JM; Yamada, I; Matsuo, J; Haynes, TE

Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING

IF7

1998-09-01

PREAI

Agarwal, A; Gossmann, HJ; Eaglesham, DJ; Pelaz, L; Jacobson, DC; Poate, JM; Haynes, TE

The interstitial fraction of diffusivity of common dopants in Si

APPLIED PHYSICS LETTERS

IF3.6

1997-12-29

PREAI

Gossmann, HJ; Haynes, TE; Stolk, PA; Jacobson, DC; Gilmer, GH; Poate, JM; Luftman, HS; Mogi, TK; Thompson, MO

Evolution of interstitial- and vacancy-type defects upon thermal annealing in ion-implanted Si

APPLIED PHYSICS LETTERS

IF3.6

1997-07-21

PREAI

Libertino, S; Benton, JL; Jacobson, DC; Eaglesham, DJ; Poate, JM; Coffa, S; Kringhoj, P; Fuochi, PG; Lavalle, M

Interstitial defects in silicon from 1-5 keV Si+ ion implantation

APPLIED PHYSICS LETTERS

IF3.6

1997-06-23

PREAI

Agarwal, A; Haynes, TE; Eaglesham, DJ; Gossmann, HJ; Jacobson, DC; Poate, JM; Erokhin, YE

Transient enhanced diffusion of Sb and B due to MeV silicon implants

APPLIED PHYSICS LETTERS

IF3.6

1997-06-16

PREAI

Eaglesham, DJ; Haynes, TE; Gossmann, HJ; Jacobson, DC; Stolk, PA; Poate, JM

The effect of impurity content on point defect evolution in ion implanted and electron irradiated Si

APPLIED PHYSICS LETTERS

IF3.6

1997-06-02

PREAI

Libertino, S; Benton, JL; Jacobson, DC; Eaglesham, DJ; Poate, JM; Coffa, S; Fuochi, PG; Lavalle, M

B diffusion and clustering in ion implanted Si: The role of B cluster precursors

APPLIED PHYSICS LETTERS

IF3.6

1997-04-28

192

PREAI

Pelaz, L; Jaraiz, M; Gilmer, GH; Gossmann, HJ; Rafferty, CS; Eaglesham, DJ; Poate, JM

Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon

APPLIED PHYSICS LETTERS

IF3.6

1996-09-02

PREAI

Haynes, TE; Eaglesham, DJ; Stolk, PA; Gossmann, HJ; Jacobson, DC; Poate, JM

Thermal nitridation enhanced diffusion of Sb and Si(100) doping superlattices

APPLIED PHYSICS LETTERS

IF3.6

1996-08-26

PREAI

Mogi, TK; Thompson, MO; Gossmann, HJ; Poate, JM; Luftman, HS

The influence of TiSi2 and CoSi2 growth on si native point defects: The role of the diffusing species

APPLIED PHYSICS LETTERS

IF3.6

1996-05-13

PREAI

Herner, SB; Jones, KS; Gossmann, HJ; Tung, RT; Poate, JM; Luftman, HS

Point defects in Si after formation of a TiSi2 film: Evidence for vacancy supersaturation and interstitial depletion

APPLIED PHYSICS LETTERS

IF3.6

1996-03-18

PREAI

Herner, SB; Jones, KS; Gossmann, HJ; Poate, JM; Luftman, HS

Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

APPLIED PHYSICS LETTERS

IF3.6

1996-01-15

162

PREAI

Jaraiz, M; Gilmer, GH; Poate, JM; delaRubia, TD

The mechanism of iron gettering in boron-doped silicon

APPLIED PHYSICS LETTERS

IF3.6

1996-01-01

PREAI

Stolk, PA; Benton, JL; Eaglesham, DJ; Jacobson, DC; Cheng, JY; Poate, JM; Myers, SM; Haynes, TE

研究方向