Zhongquan Ma

Shanghai University

H指数:21

被引数:1,566

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Tailoring the microstructure and mechanical properties of wire arc additively manufactured Ti6Al4V alloy by in-situ microalloying with modified nanocarbon

MATERIALS CHARACTERIZATION

IF5.5

2024-12-010

PRE

CsPbIBr2 Thick Film With (100)-Preferred Orientation Enables Highly Sensitive X-Ray Detector by a Spray-Coating Method via Dual-Additive-Assisted Solution Strategy under Atmospheric Environment

具有 (100) 优先取向的CsPbIBr2厚膜在大气环境下通过双添加剂辅助溶液策略通过喷涂方法实现高灵敏度x射线探测器

ADVANCED FUNCTIONAL MATERIALS

IF19

2024-11-101

PRE

Dual-Doping Strategy of Metal Chlorides in Ambient Air with High Humidity for Achieving Highly Air-Stable All-Inorganic Perovskite Solar Cells

高湿度环境空气中金属氯化物的双掺杂策略，用于实现高度空气稳定的全无机钙钛矿太阳能电池

SOLAR RRL

IF4.7

2024-05-120

PRE

On the presence of oxyphosphorus bonds in TOPCon solar cell polycrystalline silicon films

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2022-10-015

PRE

Exploration of Phosphorus Oxide in Heavily Phosphorus-Doped Polysilicon Films of Tunneling Oxide Passivation Contact Solar Cells

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2022-08-093

PRE

Fine-Tuning Single-Source White-Light Emission from All-Inorganic Corrugated 2D Antimony-Halide Perovskite

全无机波纹2D卤化锑钙钛矿的微调单光源白光发射

ADVANCED OPTICAL MATERIALS

IF7.2

2022-06-1514

PRE

The performance of a perovskite-silicon tandem photovoltaic device coupled with the infrared-enhanced response titanium subnitride film

APPLIED SURFACE SCIENCE

IF6.9

2022-03-010

PRE

The hole transport mechanism of MoOx/a-Si: H(i)/n-Si heterojunction photovoltaic devices: the source of the 'S-shaped' behavior

MoOx/a-si: H(i)/n-si异质结光伏器件的空穴传输机理: “S形” 行为的来源

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-07-282

PREAI

Bilayer MoOX/CrOX Passivating Contact Targeting Highly Stable Silicon Heterojunction Solar Cells

针对高稳定硅异质结太阳能电池的双层MoOX/CrOX钝化触点

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2020-07-1539

PREAI

Temperature-dependent nonmonotonous evolution of excitonic blue luminescence and Stokes shift in chlorine-based organometallic halide perovskite film

APPLIED PHYSICS LETTERS

IF3.6

2020-02-214

PREAI

Ultrafine Cu2ZnSnS4 quantum dots functionalized TiO2 nanotube arrays for potential optoelectronic applications

CERAMICS INTERNATIONAL

IF5.6

2020-02-017

PREAI

Experimental Realization of 1400-2100 nm Broadband Emission for Wide-Bandwidth Optical Communication in Er-Tm Codoped ZnO Films and Devices

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2020-01-203

PREAI

Improvement of the performance of ITO/a-SiOx/n-Si device by controllable sputtering power and reducible interface states

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2020-01-013

PREAI

Electronic structure of molybdenum-involved amorphous silica buffer layer in MoOx/n-Si heterojunction

APPLIED SURFACE SCIENCE

IF6.9

2019-04-017

PREAI

Interface properties of ITO/n-Si heterojunction solar cell: Quantum tunneling, passivation and hole-selective contacts

SOLAR ENERGY

IF6.6

2018-10-0119

PREAI

Bifunctional Hybrid a-SiOx(Mo) Layer for Hole-Selective and Interface Passivation of Highly Efficient MoOx/a-SiOx(Mo)/n-Si Heterojunction Photovoltaic Device

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2018-07-2433

PREAI

Effect of post-annealing on the properties of thermally evaporated molybdenum oxide films: Interdependence of work function and oxygen to molybdenum ratio

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2018-03-0133

PREAI

The bifunctional tin-doped indium oxide as hole-selective contact and collector in silicon heterojunction solar cell with a stable intermediate oxide layer

SOLAR ENERGY

IF6.6

2017-10-0112

PREAI

A concise way to estimate the average density of interface states in an ITO-SiOx/n-Si heterojunction solar cell

一种估算ito-siox/n-si异质结太阳能电池中界面态平均密度的简洁方法

APPLIED SURFACE SCIENCE

IF6.9

2017-09-019

PREAI

Effective Passivation and Tunneling Hybrid a-SiOx(In) Layer in ITO/n-Si Heterojunction Photovoltaic Device

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2017-05-1120

PREAI

Zhongquan Ma

个人简介

教育背景

工作经历

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