logo
科言猫学术研究的AI总结
language
手机端手机端
  • Phone Feature微信小程序
简体中文简体中文
notice消息通知
博客博客
delete
arrow
返回
G

G. Feuillet

communaute universite grenoble alpes

38H指数
250论文数
5.4K被引数
收录论文 28
发表时间
logo
Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate
errSCIENTIFIC REPORTS
IF3.9
err2020-11-03
err0
errOAAI
errDamilano, Benjamin; Portail, Marc; Frayssinet, Eric; Brandli, Virginie; Faure, Florian; Largeron, Christophe; Cooper, David; Feuillet, Guy; Turover, Daniel
err分享
err收藏
Efficient second harmonic generation in low-loss planar GaN waveguides低损耗平面GaN波导中高效二次谐波的产生
errOPTICS EXPRESS
IF3.3
err2017-09-12
err22
errOAAI
errGromovyi, Maksym; Brault, Julien; Courville, Aimeric; Rennesson, Stephanie; Semond, Fabrice; Feuillet, Guy; Baldi, Pascal; Boucaud, Philippe; Duboz, Jean-Yves; De Micheli, Marc P.
err分享
err收藏
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
errAPPLIED PHYSICS REVIEWS
IF11.6
err2016-11-15
err111
PREAI
errZuniga-Perez, Jesus; Consonni, Vincent; Lymperakis, Liverios; Kong, Xiang; Trampert, Achim; Fernandez-Garrido, Sergio; Brandt, Oliver; Renevier, Hubert; Keller, Stacia; Hestroffer, Karine; Wagner, Markus R.; Reparaz, Juan Sebastian; Akyol, Fatih; Rajan, Siddharth; Rennesson, Stephanie; Palacios, Tomas; Feuillet, Guy
err分享
err收藏
Defect blocking via laterally induced growth of semipolar (1 0(1)over-bar 1) GaN on patterned substrates通过在图案化衬底上横向诱导生长半极性 (1 0(1)over-bar 1) GaN来阻挡缺陷
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2016-11-01
err14
PREAI
errKhoury, Michel; Vennegues, Philippe; Leroux, Mathieu; Delaye, Vincent; Feuillet, Guy; Zuniga-Perez, Jesus
err分享
err收藏
Oxygen vacancy and EC-1 eV electron trap in ZnO
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2014-10-31
err13
errOAAI
errChicot, Gauthier; Muret, Pierre; Santailler, Jean-Louis; Feuillet, Guy; Pernot, Julien
err分享
err收藏
Local band bending and grain-to-grain interaction induced strain nonuniformity in polycrystalline CdTe films
errPHYSICAL REVIEW B
IF3.7
err2014-01-21
err22
PREAI
errConsonni, V.; Baier, N.; Robach, O.; Cayron, C.; Donatini, F.; Feuillet, G.
err分享
err收藏
Arsenic complexes optical signatures in As-doped HgCdTe
errAPPLIED PHYSICS LETTERS
IF3.6
err2013-04-09
err18
PREAI
errGemain, F.; Robin, I. C.; Brochen, S.; Ballet, P.; Gravrand, O.; Feuillet, G.
err分享
err收藏
Strain relaxation by dislocation glide in ZnO/ZnMgO core-shell nanowires
errAPPLIED PHYSICS LETTERS
IF3.6
err2012-04-23
err23
errOAAI
errPerillat-Merceroz, G.; Thierry, R.; Jouneau, P. -H.; Ferret, P.; Feuillet, G.
err分享
err收藏
Role of deep and shallow donor levels on n-type conductivity of hydrothermal ZnO
errAPPLIED PHYSICS LETTERS
IF3.6
err2012-02-03
err25
PREAI
errBrochen, S.; Granier, C.; Feuillet, G.; Pernot, J.
err分享
err收藏
Local redistribution of dopants and defects induced by annealing in polycrystalline compound semiconductors
errPHYSICAL REVIEW B
IF3.7
err2009-10-29
err17
PREAI
errConsonni, V.; Feuillet, G.; Barnes, J. P.; Donatini, F.
err分享
err收藏
The flow stress in polycrystalline films: Dimensional constraints and strengthening effects
errACTA MATERIALIA
IF9.3
err2008-12-01
err11
PREAI
errConsonni, V.; Feuillet, G.; Gergaud, P.
err分享
err收藏
Low residual doping level in homoepitaxially grown ZnO layers (vol 92, art no 141101, 2008)
errAPPLIED PHYSICS LETTERS
IF3.6
err2008-05-23
err0
errOAAI
errRobin, I. C.; Ribeaud, A.; Brochen, S.; Feuillet, G.; Ferret, P.; Mariette, H.; Ehrentraut, D.; Fukuda, T.
err分享
err收藏
Low residual doping level in homoepitaxially grown ZnO layers
errAPPLIED PHYSICS LETTERS
IF3.6
err2008-04-07
err16
PREAI
errRobin, I. C.; Ribeaud, A.; Brochen, S.; Feuillet, G.; Ferret, P.; Mariette, H.; Ehrentraut, D.; Fukuda, T.
err分享
err收藏
Evidence for low density of nonradiative defects in ZnO nanowires grown by metal organic vapor-phase epitaxy
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-10-04
err42
PREAI
errRobin, I. C.; Gauron, B.; Ferret, P.; Tavares, C.; Feuillet, G.; Dang, Le Si; Gayral, B.; Gerard, J. M.
err分享
err收藏
Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization
errAPPLIED SURFACE SCIENCE
IF6.9
err2003-05-01
err3
PREAI
errPons, M; Baillet, F; Blanquet, E; Pernot, E; Madar, R; Chaussende, D; Mermoux, M; Di Coccio, L; Ferret, P; Feuillet, G; Faure, C; Billon, T
err分享
err收藏
Strain relaxation in (0001) AlN/GaN heterostructures -: art. no. 245307
errPHYSICAL REVIEW B
IF3.7
err2001-06-04
err108
PREAI
errBourret, A; Adelmann, C; Daudin, B; Rouvière, JL; Feuillet, G; Mula, G
err分享
err收藏
Signature of GaN-AlN quantum dots by nonresonant Raman scattering
errAPPLIED PHYSICS LETTERS
IF3.6
err2000-10-02
err23
PREAI
errGleize, J; Frandon, J; Demangeot, F; Renucci, MA; Adelmann, C; Daudin, B; Feuillet, G; Damilano, B; Grandjean, N; Massies, J
err分享
err收藏
Self-assembled zinc blende GaN quantum dots grown by molecular-beam epitaxy
errAPPLIED PHYSICS LETTERS
IF3.6
err2000-08-07
err83
PREAI
errMartinez-Guerrero, E; Adelmann, C; Chabuel, F; Simon, J; Pelekanos, NT; Mula, G; Daudin, B; Feuillet, G; Mariette, H
err分享
err收藏
Self-assembled InGaN quantum dots grown by molecular-beam epitaxy
errAPPLIED PHYSICS LETTERS
IF3.6
err2000-03-20
err165
PREAI
errAdelmann, C; Simon, J; Feuillet, G; Pelekanos, NT; Daudin, B; Fishman, G
err分享
err收藏
Indium incorporation during the growth of InGaN by molecular-beam epitaxy studied by reflection high-energy electron diffraction intensity oscillations
errAPPLIED PHYSICS LETTERS
IF3.6
err1999-11-29
err66
PREAI
errAdelmann, C; Langer, R; Feuillet, G; Daudin, B
err分享
err收藏

研究方向

暂时未获取到该数据
合作学者
合作期刊
S
S. Keller
H 指数: 90 · 论文数: 703
T
Tomás Palacios
H 指数: 87 · 论文数: 494
N
N. Grandjean
H 指数: 71 · 论文数: 787
J
Jean‐Michel Gérard
H 指数: 64 · 论文数: 519
S
Siddharth Rajan
H 指数: 62 · 论文数: 382
查看更多