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V

V. A. Gritsenko

Institute of Semiconductor Physics SB RAS

41H指数
319论文数
5.9K被引数
收录论文 70
发表时间
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Boron-irradiated Si3N4: the origin of the defect responsible for the red shift of fundamental absorption edge and increase of refractive index硼辐照Si3N4：导致基本吸收边红移和折射率增加的缺陷起源
errApplied Surface Science
IF6.9
err2025-12-30
err0
PREAI
errV.A. Gritsenko; T.V. Perevalov; Yu.N. Novikov; A.A. Gismatulin
err分享
err收藏
Exponentially strong leakage current increase in the proton-irradiated silicon nitride在质子辐照的氮化硅中，漏电流呈指数级急剧增加。
errScripta Materialia
IF5.6
err2025-09-01
err0
PREAI
errA.A. Gismatulin; V.A. Gritsenko
err分享
err收藏
Short-range order and memory properties of silicon oxide -based memristors
errAPPLIED SURFACE SCIENCE
IF6.9
err2025-04-01
err1
PREAI
errKamaev, G. N.; Novikov, Yu. N.; Prosvirin, I. P.; Gismatulin, A. A.; Khanas, A. R.; Zenkevich, A. V.; Gritsenko, V. A.
err分享
err收藏
Origin of exponentially large increase in the leakage current in alumina films depending on the ALD synthesis temperature
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-08-05
err0
PREAI
errGismatulin, A. A.; Novikov, Yu. N.; Andreeva, N. V.; Mazing, D. S.; Gritsenko, V. A.
err分享
err收藏
Electron and hole bipolar injection in magnesium oxide films
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-01-26
err0
PREAI
errPerevalov, Timofey V.; Islamov, Damir R.; Zalyalov, Timur M.; Gismatulin, Andrei A.; Golyashov, Vladimir A.; Tereshchenko, Oleg E.; Gorshkov, Dmitry V.; Gritsenko, Vladimir A.
err分享
err收藏
Oxygen Vacancies as Traps Responsible for La-Doped Hf0.5Zr0.5O2 Charge Transport
errJOURNAL OF PHYSICAL CHEMISTRY C
IF3.2
err2023-07-20
err5
PREAI
errPerevalov, Timofey V.; Gismatulin, Andrei A.; Prosvirin, Igor P.; Pustovarov, Vladimir A.; Gritsenko, Vladimir A.
err分享
err收藏
Memory properties and short-range order in silicon oxynitride-based memristors
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-06-05
err2
PREAI
errNovikov, Yu. N.; Kamaev, G. N.; Prosvirin, I. P.; Gritsenko, V. A.
err分享
err收藏
Synchrotron-Excited Luminescence and Converting of Defects and Quantum Dots in Modified Silica Films
errJOURNAL OF NON-CRYSTALLINE SOLIDS
IF3.5
err2023-02-01
err6
PREAI
errPustovarov, V. A.; Zatsepin, A. F.; Biryukov, D. Yu.; Aliev, V. Sh.; Iskhakzay, R. M. Kh.; Gritsenko, V. A.
err分享
err收藏
Short-range order and charge transport in silicon-rich pyrolytic silicon oxynitride
errJOURNAL OF NON-CRYSTALLINE SOLIDS
IF3.5
err2023-01-01
err1
PREAI
errNovikov, Yu. N.; Gismatulin, A. A.; Prosvirin, I. P.; Bobovnikov, P. G.; Krasnikov, G. Ya.; Gritsenko, V. A.
err分享
err收藏
Electronic structure of silicon oxynitride films grown by plasma-enhanced chemical vapor deposition for memristor application
errJOURNAL OF NON-CRYSTALLINE SOLIDS
IF3.5
err2022-12-01
err12
PREAI
errPerevalov, T. V.; Volodin, V. A.; Kamaev, G. N.; Gismatulin, A. A.; Cherkova, S. G.; Prosvirin, I. P.; Astankova, K. N.; Gritsenko, V. A.
err分享
err收藏
Thermal quenching of self-trapped exciton luminescence in nanostructured hafnia
errJOURNAL OF LUMINESCENCE
IF3.6
err2022-07-01
err7
errOAAI
errShilov, A. O.; Savchenko, S. S.; Vokhmintsev, A. S.; Gritsenko, V. A.; Weinstein, I. A.
err分享
err收藏
Multiphonon trap ionization mechanism in amorphous SiNx
errJOURNAL OF NON-CRYSTALLINE SOLIDS
IF3.5
err2022-04-01
err4
PREAI
errNovikov, Yu N.; Gritsenko, V. A.
err分享
err收藏
Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor
errNANOMATERIALS
IF4.3
err2022-01-14
err4
errOAAI
errYen, Te Jui; Chin, Albert; Chan, Weng Kent; Chen, Hsin-Yi Tiffany; Gritsenko, Vladimir
err分享
err收藏
The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La films
errJOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES
IF6.8
err2021-12-01
err17
PREAI
errPerevalov, Timofey, V; Prosvirin, Igor P.; Suprun, Evgenii A.; Mehmood, Furqan; Mikolajick, Thomas; Schroeder, Uwe; Gritsenko, Vladimir A.
err分享
err收藏
Bipolar conductivity in ferroelectric La:HfZrO films
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-07-02
err4
PREAI
errPerevalov, Timofey V.; Gismatulin, Andrei A.; Gritsenko, Vladimir A.; Prosvirin, Igor' P.; Mehmood, Furqan; Mikolajick, Thomas; Schroeder, Uwe
err分享
err收藏
Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation
errNANOMATERIALS
IF4.3
err2021-05-25
err18
errOAAI
errYen, Te-Jui; Chin, Albert; Gritsenko, Vladimir
err分享
err收藏
Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport: Part II-Films
errMATERIALIA
IF2.9
err2021-03-01
err14
PREAI
errIslamov, Damir R.; Gritsenko, Vladimir A.; Perevalov, Timofey, V; Aliev, Vladimir Sh; Nadolinny, Vladimir A.; Chin, Albert
err分享
err收藏
Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport: Part I-Crystals
errMATERIALIA
IF2.9
err2021-03-01
err12
PREAI
errIslamov, Damir R.; Gritsenko, Vladimir A.; Perevalov, Timofey, V; Yelisseyev, Alexander P.; Pustovarov, Vladimir A.; Korolkov, Ilya, V; Lomonova, Elena E.
err分享
err收藏
Charge transport mechanism in the forming-free memristor based on silicon nitride
errSCIENTIFIC REPORTS
IF3.9
err2021-01-28
err23
errOAAI
errGismatulin, Andrei A.; Kamaev, Gennadiy N.; Kruchinin, Vladimir N.; Gritsenko, Vladimir A.; Orlov, Oleg M.; Chin, Albert
err分享
err收藏
Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer
errNANOMATERIALS
IF4.3
err2021-01-03
err17
errOAAI
errYen, Te Jui; Chin, Albert; Gritsenko, Vladimir
err分享
err收藏

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